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    • 1. 发明授权
    • Uncooled tunneling infrared sensor
    • 未冷却隧道红外传感器
    • US5436452A
    • 1995-07-25
    • US79507
    • 1993-06-21
    • Thomas W. KennyWilliam J. KaiserJudith A. PodosekErika C. VoteRichard E. MullerPaul D. Maker
    • Thomas W. KennyWilliam J. KaiserJudith A. PodosekErika C. VoteRichard E. MullerPaul D. Maker
    • G01J1/42G01J5/00G01J5/42G01Q10/00G01Q30/10G01Q60/16G01Q70/14G01Q70/18H01J37/00
    • G01J5/42B82Y35/00G01J2005/425
    • An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
    • 非制冷红外隧道传感器,其中唯一的移动部分是偏转成与通过新颖的光刻工艺制备的微机加工的硅尖端电极接触的膜片。 类似地制备的偏转电极采用静电力来控制氮化硅,平膜片的偏转。 振膜表现出高谐振频率,可降低传感器对振动的敏感度。 高带宽反馈电路通过调节偏转电压来控制隧穿电流,以保持膜的恒定偏转。 所得到的红外传感器可以小于100μm的像素尺寸。 使用波纹膜实现替代实施例,以允许大的偏转而不需要复杂的钳位和高偏转电压。 替代实施例还在膜中采用针孔以适应环境温度变化和密封室,以消除隧道电极的环境污染和对传感器的不合需要的声耦合。