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    • 4. 发明授权
    • High speed optoelectronic switch
    • 高速光电开关
    • US4376285A
    • 1983-03-08
    • US162073
    • 1980-06-23
    • Frederick J. LeonbergerFrederick J. O'Donnell
    • Frederick J. LeonbergerFrederick J. O'Donnell
    • H01L31/16H01L27/12H01L27/14H01L29/161
    • H01L31/162
    • An optoelectronic switch has been formed from a semi-insulating substrate of indium phosphide doped with a deep level impurity and disposed intermediate a microstrip transmission line. One conductor of the transmission line has a small gap in its metallization. Upon illumination of the gap by laser pulses which are absorbed near the semiconductor surface, a photogenerated electron-hole plasma forms thereby providing a conducting path across the gap turning the switch "on."A process of fabricating the switch is described, an important feature of which is a heat-treatment process which improves the response time of the switch to .about.50 picoseconds. Another important part of the invention is the formation of an optically semi-transparent metallic film at the gap surface. This provides greater efficiency in the coupling of light into the device at the gap while at the same time maintaining a short electronically non-conductive gap and thus a relatively low ON-state impedance for the switch.
    • 由掺杂深层杂质的磷化铟半绝缘基板形成光电开关,并设置在微带传输线之间。 传输线的一个导体在其金属化中具有小的间隙。 通过在半导体表面附近吸收的激光脉冲照射间隙,从而形成光生电子 - 空穴等离子体,从而提供穿过间隙的导电路径,使开关“接通”。 描述了制造开关的过程,其重要特征是热处理过程,其将开关的响应时间提高到差速比50皮秒。 本发明的另一重要部分是在间隙表面形成光学半透明金属膜。 这提供了在间隙处将光耦合到器件中更高的效率,同时保持短的电子不导电间隙,并且因此保持开关的相对低的导通状态阻抗。