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1. 发明申请

US20120295417A1 SELECTIVE EPITAXIAL GROWTH BY INCUBATION TIME ENGINEERING 审中-公开
标题翻译：选择性外来成长通过孵化时间工程
公开(公告)号：US20120295417A1
公开(公告)日：2012-11-22
申请号：US13109567
申请日：2011-05-17
申请人： Thomas N. Adam , Katherina E. Babich , Stephen W. Bedell , Joel P. de Souza , Gerald W. Gibson , Alexander Reznicek , Devendra K. Sadana , Seshadri Subbanna
发明人： Thomas N. Adam , Katherina E. Babich , Stephen W. Bedell , Joel P. de Souza , Gerald W. Gibson , Alexander Reznicek , Devendra K. Sadana , Seshadri Subbanna
IPC分类号： H01L21/20
CPC分类号： H01L29/66628 , H01L21/0237 , H01L21/02524 , H01L21/02639 , H01L29/165 , H01L29/78
摘要： A method of controlling the nucleation rate (i.e., incubation time) of dissimilar materials in an epitaxial growth chamber that can favor high growth rates and can be compatible with low temperature growth is provided. The nucleation rate of dissimilar materials is controlled in an epitaxial growth chamber by altering the nucleation rate for the growth of a given material film, relative to single crystal growth of the same material film, by choosing an appropriate masking material with a given native nucleation characteristic, or by modifying the surface of the masking layer to achieve the appropriate nucleation characteristic. Alternatively, nucleation rate control can be achieved by modifying the surface of selected areas of a semiconductor substrate relative to other areas in which an epitaxial semiconductor material will be subsequently formed.
摘要翻译：提供了一种控制外延生长室中不同材料的成核速率（即孵育时间）的方法，其可以有利于高生长速率并且可以与低温生长相容。通过选择具有给定的天然成核特性的合适的掩蔽材料，通过相对于相同材料膜的单晶生长改变给定材料膜的生长的成核速率，在外延生长室中控制不同材料的成核速率，或通过改变掩模层的表面以获得适当的成核特性。或者，可以通过相对于其后将形成外延半导体材料的其它区域修改半导体衬底的选定区域的表面来实现成核速率控制。

2. 发明授权

US07329596B2 Method for tuning epitaxial growth by interfacial doping and structure including same 有权
标题翻译：通过界面掺杂和包括其的结构来调谐外延生长的方法
公开(公告)号：US07329596B2
公开(公告)日：2008-02-12
申请号：US11259654
申请日：2005-10-26
申请人： Katherina E. Babich , Bruce B. Doris , David R. Medeiros , Devendra K. Sadana
发明人： Katherina E. Babich , Bruce B. Doris , David R. Medeiros , Devendra K. Sadana
IPC分类号： H01L21/44
CPC分类号： H01L29/0847 , H01L21/2236 , H01L21/2256 , H01L21/26513 , H01L21/823418 , H01L21/823814 , H01L29/66628 , H01L29/7834
摘要： A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces. More specifically, the invention comprises a method for counterdoping of n-FET and/or p-FET regions of silicon circuitry during the halo and/or extension implantation process utilizing a technique by which the surface characteristics of the two regions are made similar with respect to their response to wet or dry surface preparation and which renders the two previously dissimilar surfaces amenable to simultaneous epitaxial growth of raised source/drain structures; but not otherwise affecting the electrical performance of the resulting device.
摘要翻译：允许通过新颖的表面制备方案不使衬底变薄的不同掺杂的半导体表面（n型和p型）上的半导体材料均匀地同时外延生长的方法，以及由提供了将该方案实现为集成电路的过程集成流程。本发明的方法可以用于从不同的表面进行半导体材料的选择性或非选择性外延生长。更具体地说，本发明包括一种在卤素和/或延伸注入过程期间用于对硅电路的n-FET和/或p-FET区进行反掺杂的方法，利用这样的技术，使两个区域的表面特性相对于它们对湿表面或干表面制备的反应，并且使得两个先前不同的表面可以容易地升高的源极/漏极结构的同时外延生长; 但不会影响所得设备的电气性能。

3. 发明授权

US07790593B2 Method for tuning epitaxial growth by interfacial doping and structure including same 失效
标题翻译：通过界面掺杂和包括其的结构来调谐外延生长的方法
公开(公告)号：US07790593B2
公开(公告)日：2010-09-07
申请号：US11962796
申请日：2007-12-21
申请人： Katherina E. Babich , Bruce B. Doris , David R. Medeiros , Devendra K. Sadana
发明人： Katherina E. Babich , Bruce B. Doris , David R. Medeiros , Devendra K. Sadana
IPC分类号： H01L21/44
CPC分类号： H01L29/0847 , H01L21/2236 , H01L21/2256 , H01L21/26513 , H01L21/823418 , H01L21/823814 , H01L29/66628 , H01L29/7834
摘要： A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces. More specifically, the invention comprises a method for counterdoping of n-FET and/or p-FET regions of silicon circuitry during the halo and/or extension implantation process utilizing a technique by which the surface characteristics of the two regions are made similar with respect to their response to wet or dry surface preparation and which renders the two previously dissimilar surfaces amenable to simultaneous epitaxial growth of raised source/drain structures; but not otherwise affecting the electrical performance of the resulting device.
摘要翻译：允许通过新颖的表面制备方案不使衬底变薄的不同掺杂的半导体表面（n型和p型）上的半导体材料均匀地同时外延生长的方法，以及由提供了将该方案实现为集成电路的过程集成流程。本发明的方法可以用于从不同的表面进行半导体材料的选择性或非选择性外延生长。更具体地说，本发明包括一种在卤素和/或延伸注入过程期间用于对硅电路的n-FET和/或p-FET区进行反掺杂的方法，利用这样的技术，使两个区域的表面特性相对于它们对湿表面或干表面制备的反应，并且使得两个先前不同的表面可以容易地升高的源极/漏极结构的同时外延生长; 但不会影响所得设备的电气性能。

4. 发明申请

US20080153270A1 METHOD FOR TUNING EPITAXIAL GROWTH BY INTERFACIAL DOPING AND STRUCTURE INCLUDING SAME 失效
公开(公告)号：US20080153270A1
公开(公告)日：2008-06-26
申请号：US11962796
申请日：2007-12-21
申请人： Katherina E. Babich , Bruce B. Doris , David R. Medeiros , Devendra K. Sadana
发明人： Katherina E. Babich , Bruce B. Doris , David R. Medeiros , Devendra K. Sadana
IPC分类号： H01L21/22
CPC分类号： H01L29/0847 , H01L21/2236 , H01L21/2256 , H01L21/26513 , H01L21/823418 , H01L21/823814 , H01L29/66628 , H01L29/7834
摘要： A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces. More specifically, the invention comprises a method for counterdoping of n-FET and/or p-FET regions of silicon circuitry during the halo and/or extension implantation process utilizing a technique by which the surface characteristics of the two regions are made similar with respect to their response to wet or dry surface preparation and which renders the two previously dissimilar surfaces amenable to simultaneous epitaxial growth of raised source/drain structures; but not otherwise affecting the electrical performance of the resulting device.

5. 发明授权

US07545041B2 Techniques for patterning features in semiconductor devices 有权
标题翻译：在半导体器件中构图特征的技术
公开(公告)号：US07545041B2
公开(公告)日：2009-06-09
申请号：US11337411
申请日：2006-01-23
申请人： Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
发明人： Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/0337 , H01L21/0338 , H01L21/31116 , Y10T428/24802 , Y10T428/24926
摘要： Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
摘要翻译：提供了半导体处理技术。在一个方面，一种用于图案化半导体器件中的一个或多个特征的方法包括以下步骤。在抗反射材料的蚀刻期间，一个或多个特征的至少一个临界尺寸被减小。还提供了光刻结构。

6. 发明授权

US07361444B1 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 有权
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US07361444B1
公开(公告)日：2008-04-22
申请号：US09256034
申请日：1999-02-23
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/023
CPC分类号： G03F7/091 , Y10S430/145
摘要： Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.
摘要翻译：公开了包括双层和顶面成像的多层抗蚀剂结构，其利用用作ARC的调谐底层，平坦化层和耐蚀刻硬掩模，其特性如光学，化学和物理性质被定制以产生呈现高分辨率的多层抗蚀剂结构自由光刻及其制备方法。这些下层膜包括其加工条件被控制的基于酚醛清漆的抗蚀剂的组，诸如BARL材料的聚芳基砜，聚羟基苯乙烯基衍生物，作为与含有交联剂的蒽甲醇反应的聚羟基苯乙烯和聚羟基苯乙烯的共聚物的实例，以及酸催化剂（热酸生成剂），聚酰亚胺，聚醚，特别是聚亚芳基醚，聚芳基硫醚，聚碳酸酯如聚芳基碳酸酯，环氧化物，环氧丙烯酸酯，聚亚芳基如聚苯撑，聚亚芳基亚乙烯基如聚亚苯基亚乙烯基，聚乙烯基咔唑，环烯烃和聚酯。这种膜的折射率和消光系数在UV和DUV波长，特别是365,248,293和157nm以及EUV下可调节为约1.4至约2.1和约0.1至约0.6。此外，在本发明中制备的底层膜不与抗蚀剂界面混合和除气产物对抗蚀剂的污染相互作用。双层和TSI抗蚀剂结构可用于248,193,157，EUV，X射线，电子束和离子束技术。

7. 发明授权

US06686124B1 Multifunctional polymeric materials and use thereof 失效
标题翻译：多功能聚合材料及其用途
公开(公告)号：US06686124B1
公开(公告)日：2004-02-03
申请号：US09524692
申请日：2000-03-14
申请人： Marie Angelopoulos , Katherina E. Babich , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Katherina E. Babich , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03C176
CPC分类号： G03F7/091 , G03C1/733
摘要： A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizing layer or etch resistant hard mask.
摘要翻译：包含具有发色团和交联位点的聚合物链的多官能聚合物适合作为抗蚀剂材料，特别是作为双层和顶表面成像策略的底层。多功能聚合物可用作抗反射涂层，平坦化层或耐蚀刻硬掩模。

8. 发明授权

US06251569B1 Forming a pattern of a negative photoresist 有权
标题翻译：形成负光致抗蚀剂的图案
公开(公告)号：US06251569B1
公开(公告)日：2001-06-26
申请号：US09373555
申请日：1999-08-13
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03F730
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.
摘要翻译：已经发现了一组新的基于聚合物侧基碳基 - 氧键重新分配的非化学扩增负色调水/水基（可显影（photo））抗蚀剂。

9. 发明申请

US20130017486A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , B32B7/02 , B32B27/06 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

10. 发明授权

US08293454B2 Process of making a lithographic structure using antireflective materials 有权
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： B32B9/04 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

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