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1. 发明授权

US07175940B2 Method of two dimensional feature model calibration and optimization 有权
公开(公告)号：US07175940B2
公开(公告)日：2007-02-13
申请号：US10266922
申请日：2002-10-09
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

2. 发明授权

US07820341B2 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US07820341B2
公开(公告)日：2010-10-26
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

3. 发明授权

US07376930B2 Method, program product and apparatus for generating assist features utilizing an image field map 有权
标题翻译：用于利用图像场图产生辅助特征的方法，程序产品和装置
公开(公告)号：US07376930B2
公开(公告)日：2008-05-20
申请号：US10878490
申请日：2004-06-29
申请人： Kurt E. Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Fung Chen
发明人： Kurt E. Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Fung Chen
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要翻译：所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。辅助特征可以相对于图像场图的轮廓的主轴定向。此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。此外，可以根据从图像场地图识别的极值放置辅助特征。利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

4. 发明申请

US20070117030A1 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US20070117030A1
公开(公告)日：2007-05-24
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
发明人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

5. 发明申请

US20050053848A1 Method, program product and apparatus for generating assist features utilizing an image field map 有权
标题翻译：用于利用图像场图产生辅助特征的方法，程序产品和装置
公开(公告)号：US20050053848A1
公开(公告)日：2005-03-10
申请号：US10878490
申请日：2004-06-29
申请人： Kurt Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Chen
发明人： Kurt Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03F9/00 , G06F17/00 , H01L21/00 , H01L21/027
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要翻译：所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。辅助特征可以相对于图像场图的轮廓的主轴定向。此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。此外，可以根据从图像场地图识别的极值放置辅助特征。利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

6. 发明授权

US07856606B2 Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems 有权
标题翻译：用于抑制使用光刻系统打印的特征的波纹的装置，方法和程序产品
公开(公告)号：US07856606B2
公开(公告)日：2010-12-21
申请号：US11092983
申请日：2005-03-30
申请人： Markus Franciscus Antonius Eurlings , Melchior Mulder , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Antonius Eurlings , Melchior Mulder , Thomas Laidig , Uwe Hollerbach
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.
摘要翻译：一种当使用掩模在衬底的表面上成像时最小化特征波纹的方法。该方法包括以下步骤：在设计的多个部分的每个部分的多个评估点中的每一个处确定设计的第一表示和设计的图像的第二表示之间的偏差; 基于所述多个评价点的评价来确定每个部分处的所述设计的修改量; 并在每个部分修改设计在上一步确定的量。

7. 发明申请

US20060010417A1 Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems 有权
标题翻译：用于抑制使用光刻系统打印的特征的波纹的装置，方法和程序产品
公开(公告)号：US20060010417A1
公开(公告)日：2006-01-12
申请号：US11092983
申请日：2005-03-30
申请人： Markus Franciscus Eurlings , Melchior Mulder , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Eurlings , Melchior Mulder , Thomas Laidig , Uwe Hollerbach
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.
摘要翻译：一种当使用掩模在衬底的表面上成像时最小化特征波纹的方法。该方法包括以下步骤：在设计的多个部分的每个部分的多个评估点中的每一个处确定设计的第一表示和设计的图像的第二表示之间的偏差; 基于所述多个评价点的评价来确定每个部分处的所述设计的修改量; 并在每个部分修改设计在上一步确定的量。

8. 发明申请

US20060250589A1 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence 有权
标题翻译：用于执行基于模型的光学邻近校正因子分解邻居影响的装置，方法和计算机程序产品
公开(公告)号：US20060250589A1
公开(公告)日：2006-11-09
申请号：US11122220
申请日：2005-05-05
申请人： Markus Franciscus Eurlings , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Eurlings , Thomas Laidig , Uwe Hollerbach
IPC分类号： G03B27/68
CPC分类号： G03F1/36
摘要： Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.
摘要翻译：基于模型的光学邻近校正（MOPC）偏置技术可用于优化掩模图案。然而，传统的MOPC技术不能解释掩模上相邻特征的影响。这种影响可以以以下方式考虑：首先，从目标图案生成预测图案，并且选择可以确定偏置的多个评估点。接下来，为每个评估点生成一组多变量方程，每个方程表示相邻特征对掩模的影响。求解等式以确定每个评估点的偏差量，并相应地优化掩模。可以重复该过程，直到掩模图案进一步优化。

9. 发明授权

US07349066B2 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence 有权
标题翻译：用于执行基于模型的光学邻近校正因子分解邻域影响的装置，方法和计算机程序产品
公开(公告)号：US07349066B2
公开(公告)日：2008-03-25
申请号：US11122220
申请日：2005-05-05
申请人： Markus Franciscus Antonius Eurlings , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Antonius Eurlings , Thomas Laidig , Uwe Hollerbach
IPC分类号： G03B27/70 , G03B27/42 , G06F17/50
CPC分类号： G03F1/36
摘要： Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.
摘要翻译：基于模型的光学邻近校正（MOPC）偏置技术可用于优化掩模图案。然而，传统的MOPC技术不能解释掩模上相邻特征的影响。这种影响可以以以下方式考虑：首先，从目标图案生成预测图案，并且选择可以确定偏置的多个评估点。接下来，为每个评估点生成一组多变量方程，每个方程表示相邻特征对掩模的影响。求解等式以确定每个评估点的偏差量，并相应地优化掩模。可以重复该过程，直到掩模图案进一步优化。

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