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1. 发明申请

US20050053848A1 Method, program product and apparatus for generating assist features utilizing an image field map 有权
标题翻译：用于利用图像场图产生辅助特征的方法，程序产品和装置
公开(公告)号：US20050053848A1
公开(公告)日：2005-03-10
申请号：US10878490
申请日：2004-06-29
申请人： Kurt Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Chen
发明人： Kurt Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03F9/00 , G06F17/00 , H01L21/00 , H01L21/027
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要翻译：所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。辅助特征可以相对于图像场图的轮廓的主轴定向。此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。此外，可以根据从图像场地图识别的极值放置辅助特征。利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

2. 发明申请

US20070117030A1 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US20070117030A1
公开(公告)日：2007-05-24
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
发明人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

3. 发明申请

US20050142449A1 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US20050142449A1
公开(公告)日：2005-06-30
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
发明人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

4. 发明申请

US20060080633A1 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US20060080633A1
公开(公告)日：2006-04-13
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

5. 发明申请

US20080067143A1 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US20080067143A1
公开(公告)日：2008-03-20
申请号：US11822538
申请日：2007-07-06
申请人： Douglas Broeke , Kurt Wampler , Jang Chen
发明人： Douglas Broeke , Kurt Wampler , Jang Chen
IPC分类号： C25F3/00
CPC分类号： G03F1/32 , G03F1/34
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

6. 发明申请

US20050074677A1 Scattering bar OPC application method for sub-half wavelength lithography patterning 有权
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US20050074677A1
公开(公告)日：2005-04-07
申请号：US10880376
申请日：2004-06-30
申请人： Thomas Laidig , Kurt Wampler , Douglas Broeke , Jang Chen
发明人： Thomas Laidig , Kurt Wampler , Douglas Broeke , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03F9/00 , G06F17/00 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

7. 发明申请

US20070162889A1 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
公开(公告)号：US20070162889A1
公开(公告)日：2007-07-12
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： H01L21/302 , H01L21/461 , G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

8. 发明申请

US20050125765A1 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography 有权
标题翻译：将半导体器件图案分解为无铬相光刻的相位和铬区域的方法和装置
公开(公告)号：US20050125765A1
公开(公告)日：2005-06-09
申请号：US11035737
申请日：2005-01-18
申请人： Doug Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Doug Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G06F17/50 , G03F9/00 , G21K5/00
CPC分类号： G03F1/34 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70466 , G03F7/70941
摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
摘要翻译：一种生成用于在基板上印刷目标图案的掩模的方法。该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

9. 发明申请

US20070042277A1 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US20070042277A1
公开(公告)日：2007-02-22
申请号：US11588326
申请日：2006-10-27
申请人： Duan-Fu Hsu , Kurt Wampler , Markus Antonius Eurlings , Jang Chen , Noel Corcoran
发明人： Duan-Fu Hsu , Kurt Wampler , Markus Antonius Eurlings , Jang Chen , Noel Corcoran
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

10. 发明授权

US5821014A Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask 失效
标题翻译：用于中间间距特征的光学邻近校正方法使用掩模上的子分辨率散射棒
公开(公告)号：US5821014A
公开(公告)日：1998-10-13
申请号：US808587
申请日：1997-02-28
申请人： Jang Fung Chen , Kurt Wampler , Thomas L. Laidig
发明人： Jang Fung Chen , Kurt Wampler , Thomas L. Laidig
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70125 , G03F1/36 , G03F7/70441
摘要： A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.
摘要翻译：一种用于在光刻工艺中使用的掩模上提供用于光学邻近效应校正的散射棒的方法。散射条的间距和特性随主要特征边缘位置一起被调节和变化，以便控制CD的特征距离大于光刻过程的最小间距的距离，但小于具有独立散射条的两个特征边缘的标称距离。

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