专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07376930B2 Method, program product and apparatus for generating assist features utilizing an image field map 有权
标题翻译：用于利用图像场图产生辅助特征的方法，程序产品和装置
公开(公告)号：US07376930B2
公开(公告)日：2008-05-20
申请号：US10878490
申请日：2004-06-29
申请人： Kurt E. Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Fung Chen
发明人： Kurt E. Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Fung Chen
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要翻译：所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。辅助特征可以相对于图像场图的轮廓的主轴定向。此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。此外，可以根据从图像场地图识别的极值放置辅助特征。利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

2. 发明授权

US07550235B2 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US07550235B2
公开(公告)日：2009-06-23
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
发明人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
IPC分类号： G03F1/02
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

3. 发明授权

US07998355B2 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US07998355B2
公开(公告)日：2011-08-16
申请号：US11822538
申请日：2007-07-06
申请人： Douglas Van Den Broeke , Kurt E. Wampler , Jang Fung Chen
发明人： Douglas Van Den Broeke , Kurt E. Wampler , Jang Fung Chen
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： G03F1/32 , G03F1/34
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

4. 发明申请

US20110143268A1 Scattering Bar OPC Application Method for Sub-Half Wavelength Lithography Patterning 失效
标题翻译：散射条OPC半应用波长光刻图案的应用方法
公开(公告)号：US20110143268A1
公开(公告)日：2011-06-16
申请号：US13032590
申请日：2011-02-22
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding- the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要被成像的特征的目标图案，扩展要成像的特征的宽度，修改掩模以包括邻近放置的辅助特征要成像的特征的边缘，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

5. 发明授权

US08039180B2 Scattering bar OPC application method for sub-half wavelength lithography patterning 失效
公开(公告)号：US08039180B2
公开(公告)日：2011-10-18
申请号：US13032590
申请日：2011-02-22
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

6. 发明授权

US07774736B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07774736B2
公开(公告)日：2010-08-10
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

7. 发明授权

US07892707B2 Scattering bar OPC application method for sub-half wavelength lithography patterning 有权
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US07892707B2
公开(公告)日：2011-02-22
申请号：US12350919
申请日：2009-01-08
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得待成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近放置的辅助特征要成像的特征的边缘，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

8. 发明授权

US07485396B2 Scattering bar OPC application method for sub-half wavelength lithography patterning 失效
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US07485396B2
公开(公告)日：2009-02-03
申请号：US12071439
申请日：2008-02-21
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

9. 发明授权

US07247574B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07247574B2
公开(公告)日：2007-07-24
申请号：US10756830
申请日：2004-01-14
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区之间的相消干涉的区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

10. 发明授权

US07354681B2 Scattering bar OPC application method for sub-half wavelength lithography patterning 有权
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US07354681B2
公开(公告)日：2008-04-08
申请号：US10880376
申请日：2004-06-30
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式