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1. 发明申请

US20110233732A1 SUBSTRATE FOR AN ELECTRONIC OR ELECTROMECHANICAL COMPONENT AND NANO-ELEMENTS 审中-公开
标题翻译：电子或机电元件和纳米元件的基板
公开(公告)号：US20110233732A1
公开(公告)日：2011-09-29
申请号：US13059651
申请日：2009-08-31
申请人： Thomas Goislard De Monsabert , Chrystel Deguet , Jean Dijon , Marek Kostrzewa
发明人： Thomas Goislard De Monsabert , Chrystel Deguet , Jean Dijon , Marek Kostrzewa
IPC分类号： H01L29/06 , H01L29/02 , H01L21/762
CPC分类号： F02D13/02 , B81C1/00349 , B82Y10/00 , H01L21/187 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/53276 , H01L25/0657 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/001 , H01L51/0045 , H01L2221/1094 , H01L2924/0002 , Y02T10/18 , H01L2924/00
摘要： A substrate configured to support at least one electronic or electromechanical component and one or more nano-elements, formed with a base support, with a catalytic system, with a barrier layer, and with a layer configured to receive the electronic or electromechanical component, in single-crystal Si or in Ge or in a mixture of these materials. The catalytic system lies on the base support without any contact with the layer configured to receive electronic or electromechanical component and the barrier layer is sandwiched between the catalytic system and the layer configured to receive the electronic or electromechanical component. This barrier layer is without any contact with the base support.
摘要翻译：一种基板，被配置为支撑至少一个电子或机电部件以及一个或多个纳米元件，所述纳米元件形成有基底支撑件，催化系统与阻挡层，以及被配置为接纳电子或机电部件的层，单晶Si或Ge或这些材料的混合物。催化系统位于基座支撑件上，而与被配置成接收电子或机电部件的层没有任何接触，并且阻挡层夹在催化系统和构造成接收电子或机电部件的层之间。该阻挡层没有与基底支撑件的任何接触。

2. 发明授权

US09991439B2 Method for implanting a piezoelectric material 有权
公开(公告)号：US09991439B2
公开(公告)日：2018-06-05
申请号：US13808703
申请日：2011-07-05
申请人： Chrystel Deguet , Nicolas Blanc , Bruno Imbert , Jean-Sebastien Moulet
发明人： Chrystel Deguet , Nicolas Blanc , Bruno Imbert , Jean-Sebastien Moulet
IPC分类号： H01L41/22 , H01L41/313 , H03H9/13 , H03H3/02
CPC分类号： H01L41/22 , H01L41/313 , H03H3/02 , H03H9/131 , Y10T29/42
摘要： A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

3. 发明申请

US20110129988A1 METHOD OF MAKING MULTIPLE IMPLANTATIONS IN A SUBSTRATE 有权
标题翻译：在基板上制作多个植入物的方法
公开(公告)号：US20110129988A1
公开(公告)日：2011-06-02
申请号：US13056220
申请日：2009-07-07
申请人： Thomas Signamarcheix , Chrystel Deguet , Frederic Mazen
发明人： Thomas Signamarcheix , Chrystel Deguet , Frederic Mazen
IPC分类号： H01L21/762 , H01L21/26
CPC分类号： H01L21/76254
摘要： A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.
摘要翻译：将原子和/或离子注入衬底的方法，包括：a）在衬底中的第一深度处首先注入离子或原子，以形成第一注入平面，b）离子或原子的至少一次第二次注入在与第一深度不同的衬底中的第二深度处，形成至少一个第二注入平面。

4. 发明申请

US20100221891A1 METHOD OF PRODUCING A HYBRID SUBSTRATE BY PARTIAL RECRYSTALLIZATION OF A MIXED LAYER 有权
标题翻译：通过混合层的部分再结晶生产混合基材的方法
公开(公告)号：US20100221891A1
公开(公告)日：2010-09-02
申请号：US12705039
申请日：2010-02-12
申请人： FRANCK FOURNEL , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
发明人： FRANCK FOURNEL , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.
摘要翻译：制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。

5. 发明申请

US20100184303A1 Method for revealing emergent dislocations in a germanium-base crystalline element 失效
标题翻译：揭示锗基晶体元素中出现的位错的方法
公开(公告)号：US20100184303A1
公开(公告)日：2010-07-22
申请号：US12654441
申请日：2009-12-18
申请人： Loic Sanchez , Chrystel Deguet
发明人： Loic Sanchez , Chrystel Deguet
IPC分类号： H01L21/30
CPC分类号： G01N1/32 , H01L22/24
摘要： The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.
摘要翻译：本发明涉及一种用于检测缺陷的方法，更具体地说，涉及具有至少一个结晶锗基表面层的元件的紧急位错。该方法包括在具有至少氧化性气体和中性气体的混合物的碱的气氛中的退火步骤，能够选择性地氧化晶体锗基表面层的出现位错。

6. 发明申请

US20080268615A1 Treatment of a Germanium Layer Bonded with a Substrate 审中-公开
标题翻译：用基材粘合的锗层的处理
公开(公告)号：US20080268615A1
公开(公告)日：2008-10-30
申请号：US12090318
申请日：2006-10-17
申请人： Frederic Allibert , Chrystel Deguet , Claire Richtarch
发明人： Frederic Allibert , Chrystel Deguet , Claire Richtarch
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours.The invention also relates to a method to produce a structure comprising a Ge layer, the method comprising bonding between a donor substrate comprising at least in the upper part thereof a thin Ge layer and a receiving substrate, characterised in that it comprises the following steps: (a) bonding of the donor with the receiving substrate such that the Ge layer is located in proximity to the bonding interface; (b) removal of the part of the donor substrate not comprising the Ge layer; (c) treatment of the structure comprising the receiving substrate and the Ge layer in accordance with said treatment method.
摘要翻译：本发明涉及一种结构的处理方法，该方法包括在衬底上的薄Ge层，所述层已预先与衬底接合，该方法包括改善Ge层的电性能和/或Ge界面的处理层，其特征在于所述处理是在500℃和600℃之间的温度下施加不超过3小时的热处理。本发明还涉及一种产生包括Ge层的结构的方法，该方法包括至少在其上部包括薄Ge层和接收衬底之间的施主衬底之间的结合，其特征在于包括以下步骤：（a）将所述施主与所述接收基板接合，使得所述Ge层位于所述接合界面附近; （b）去除不包括Ge层的供体衬底的部分; （c）根据所述处理方法处理包括接收衬底和Ge层的结构。

7. 发明授权

US09638847B2 Method for producing micron-resolution coloured images embedded in a very robust, very durable medium 有权
公开(公告)号：US09638847B2
公开(公告)日：2017-05-02
申请号：US13376033
申请日：2010-06-04
申请人： Alain-Marcel Rey , Chrystel Deguet , Laurent Frey , Francois Tardif
发明人： Alain-Marcel Rey , Chrystel Deguet , Laurent Frey , Francois Tardif
IPC分类号： G02B5/00 , G02B5/28 , C03C17/34 , G02B5/20 , G03F7/00
CPC分类号： G02B5/286 , C03C17/34 , C03C2217/425 , C03C2217/72 , G02B5/201 , G03F7/0007 , Y10T156/10 , Y10T428/24802
摘要： A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.

8. 发明授权

US08445122B2 Data storage medium and associated method 有权
标题翻译：数据存储介质及相关方法
公开(公告)号：US08445122B2
公开(公告)日：2013-05-21
申请号：US12338281
申请日：2008-12-18
申请人： Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
发明人： Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
IPC分类号： G11C11/22 , H01L21/02
CPC分类号： G11B9/02 , B82Y10/00 , G11B5/743 , G11B9/1472 , G11B9/149 , Y10T428/115
摘要： A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
摘要翻译：数据存储介质包括其表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，所述敏感材料层通过局部电场的作用被局部地改变为两个电气状态。参考平面全局平行于敏感材料层延伸，并且被配置为容纳用于与电极层组合施加静电场的至少一个元件，该电极层包括具有至多等于100nm的尺寸的多个导电部分在平行于参考平面的至少一个方向上并且由至少一个电绝缘区隔开，其中至少一些导电部分电互连，导电部分在敏感材料层内限定数据写/读位置。

9. 发明授权

US08318555B2 Method of producing a hybrid substrate having a continuous buried electrically insulating layer 有权
标题翻译：一种具有连续掩埋电绝缘层的混合基板的制造方法
公开(公告)号：US08318555B2
公开(公告)日：2012-11-27
申请号：US13125953
申请日：2009-10-29
申请人： Thomas Signamarcheix , Franck Fournel , Laurent Clavelier , Chrystel Deguet
发明人： Thomas Signamarcheix , Franck Fournel , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/84
CPC分类号： H01L21/76254
摘要： A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.
摘要翻译：一种混合基板的制造方法，其特征在于，制备包括混合层和下层电绝缘连续层的第一基板，由第一单晶区域和第二相邻非晶区域构成的混合层，构成第第一基板的自由表面。第二衬底被结合到第一衬底，第二衬底在其表面上包括具有预定晶体取向的参考层。第一衬底通过至少非晶区域的疏水分子键合而结合到第二衬底。根据参考层的结晶取向进行至少部分非晶区域至固相的再结晶，两个基板在键合界面处分离。

10. 发明授权

US07776716B2 Method for fabricating a semiconductor on insulator wafer 有权
标题翻译：绝缘子半导体晶片制造方法
公开(公告)号：US07776716B2
公开(公告)日：2010-08-17
申请号：US11746297
申请日：2007-05-09
申请人： Chrystel Deguet , Takeshi Akatsu , Hubert Moriceau , Thomas Signamarcheix , Loic Sanchez
发明人： Chrystel Deguet , Takeshi Akatsu , Hubert Moriceau , Thomas Signamarcheix , Loic Sanchez
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/76254
摘要： A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.
摘要翻译：一种通过提供半导体衬底或包括外延半导体层作为源极衬底的衬底来制造绝缘体上半导体晶片的方法，将源极衬底附接到手柄衬底以形成源极手柄组件，并以预定的分裂分离源极衬底区域设置在源极基底内并基本上平行于其主表面，以从源手柄组件移除一层，从而形成绝缘体上半导体晶片。可以在源极基板上设置扩散阻挡层，特别是氧扩散阻挡层。此外，本发明涉及通过该方法制造的相应的绝缘体上半导体晶片。

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