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1. 发明申请

US20100221891A1 METHOD OF PRODUCING A HYBRID SUBSTRATE BY PARTIAL RECRYSTALLIZATION OF A MIXED LAYER 有权
标题翻译：通过混合层的部分再结晶生产混合基材的方法
公开(公告)号：US20100221891A1
公开(公告)日：2010-09-02
申请号：US12705039
申请日：2010-02-12
申请人： FRANCK FOURNEL , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
发明人： FRANCK FOURNEL , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.
摘要翻译：制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。

2. 发明授权

US08318555B2 Method of producing a hybrid substrate having a continuous buried electrically insulating layer 有权
标题翻译：一种具有连续掩埋电绝缘层的混合基板的制造方法
公开(公告)号：US08318555B2
公开(公告)日：2012-11-27
申请号：US13125953
申请日：2009-10-29
申请人： Thomas Signamarcheix , Franck Fournel , Laurent Clavelier , Chrystel Deguet
发明人： Thomas Signamarcheix , Franck Fournel , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/84
CPC分类号： H01L21/76254
摘要： A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.
摘要翻译：一种混合基板的制造方法，其特征在于，制备包括混合层和下层电绝缘连续层的第一基板，由第一单晶区域和第二相邻非晶区域构成的混合层，构成第第一基板的自由表面。第二衬底被结合到第一衬底，第二衬底在其表面上包括具有预定晶体取向的参考层。第一衬底通过至少非晶区域的疏水分子键合而结合到第二衬底。根据参考层的结晶取向进行至少部分非晶区域至固相的再结晶，两个基板在键合界面处分离。

3. 发明授权

US08501589B2 Method in the microelectronics fields of forming a monocrystalline layer 有权
标题翻译：微电子领域形成单晶层的方法
公开(公告)号：US08501589B2
公开(公告)日：2013-08-06
申请号：US13125951
申请日：2009-10-29
申请人： Franck Fournel , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
发明人： Franck Fournel , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L21/02524 , H01L21/02538 , H01L21/02603 , H01L21/02667
摘要： A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.
摘要翻译：用于形成给定材料的薄膜的方法包括提供在表面上具有给定材料的非晶和/或多晶膜的第一基底，并且第二基底通过疏水直接键合（分子粘附），第二衬底具有在其表面上给定结晶取向的单晶参考膜。至少对非晶和/或多晶膜进行热处理，其中热处理使得至少一部分非晶和/或多晶膜沿着参考膜的结晶取向进行固相重结晶，其中参考膜用作再结晶种子。然后将至少部分重结晶的膜与参考膜的至少一部分分离。

4. 发明授权

US08841202B2 Method of producing a hybrid substrate by partial recrystallization of a mixed layer 有权
标题翻译：通过混合层的部分再结晶来制造混合基板的方法
公开(公告)号：US08841202B2
公开(公告)日：2014-09-23
申请号：US12705039
申请日：2010-02-12
申请人： Franck Fournel , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
发明人： Franck Fournel , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.
摘要翻译：制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。

5. 发明申请

US20110201177A1 METHOD IN THE MICROELECTRONICS FIELDS OF FORMING A MONOCRYSTALLINE LAYER 有权
标题翻译：形成单晶层的微电子领域的方法
公开(公告)号：US20110201177A1
公开(公告)日：2011-08-18
申请号：US13125951
申请日：2009-10-29
申请人： Franck Fournel , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
发明人： Franck Fournel , Thomas Signamarcheix , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/02524 , H01L21/02538 , H01L21/02603 , H01L21/02667
摘要： A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.
摘要翻译：用于形成给定材料的薄膜的方法包括提供在表面上具有给定材料的非晶和/或多晶膜的第一基底，并且第二基底通过疏水直接键合（分子粘附），第二衬底具有在其表面上给定结晶取向的单晶参考膜。至少对非晶和/或多晶膜进行热处理，其中热处理使得至少一部分非晶和/或多晶膜沿着参考膜的结晶取向进行固相重结晶，其中参考膜用作再结晶种子。然后将至少部分重结晶的膜与参考膜的至少一部分分离。

6. 发明授权

US08445122B2 Data storage medium and associated method 有权
标题翻译：数据存储介质及相关方法
公开(公告)号：US08445122B2
公开(公告)日：2013-05-21
申请号：US12338281
申请日：2008-12-18
申请人： Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
发明人： Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
IPC分类号： G11C11/22 , H01L21/02
CPC分类号： G11B9/02 , B82Y10/00 , G11B5/743 , G11B9/1472 , G11B9/149 , Y10T428/115
摘要： A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
摘要翻译：数据存储介质包括其表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，所述敏感材料层通过局部电场的作用被局部地改变为两个电气状态。参考平面全局平行于敏感材料层延伸，并且被配置为容纳用于与电极层组合施加静电场的至少一个元件，该电极层包括具有至多等于100nm的尺寸的多个导电部分在平行于参考平面的至少一个方向上并且由至少一个电绝缘区隔开，其中至少一些导电部分电互连，导电部分在敏感材料层内限定数据写/读位置。

7. 发明申请

US20090161405A1 DATA STORAGE MEDIUM AND ASSOCIATED METHOD 有权
标题翻译：数据存储介质及相关方法
公开(公告)号：US20090161405A1
公开(公告)日：2009-06-25
申请号：US12338281
申请日：2008-12-18
申请人： Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
发明人： Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
IPC分类号： G11C11/22 , H01L21/02
CPC分类号： G11B9/02 , B82Y10/00 , G11B5/743 , G11B9/1472 , G11B9/149 , Y10T428/115
摘要： A data storage medium includesa carrier substrate having an electrode layer on the surface,and a sensitive material layer extending along the electrode layer, the volume whereof is adapted to be locally modified between two electrical states by the action of a localized electric field.A reference plane extends globally parallel to the sensitive material layerand is configured to pass along it at least one element for application of an electrostatic field in combination with the electrode layer. The storage medium also includes, parallel to the reference plane, a plurality of conductive portions forming part of the electrode layer and separated by at least one electrically insulative zone, the electrically conductive portions having, in at least one direction parallel to the reference plane, a dimension at most equal to 100 nm, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
摘要翻译：数据存储介质包括在表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，其体积适于通过局部电场的作用在两个电气状态之间局部改变。参考平面全局平行于敏感材料层延伸，并被配置为沿着至少一个元件传递静电场与电极层的组合。存储介质还包括平行于参考平面的多个导电部分，其形成电极层的一部分并由至少一个电绝缘区隔开，导电部分在平行于参考平面的至少一个方向上具有，至多等于100nm的尺寸，其中至少一些导电部分电互连，导电部分在敏感材料层内定义数据写入/读取位置。

8. 发明申请

US20110207293A1 METHOD OF PRODUCING A HYBRID SUBSTRATE HAVING A CONTINUOUS BURIED EECTRICALLY INSULATING LAYER 有权
标题翻译：生产具有连续渗透绝缘层的混合基材的方法
公开(公告)号：US20110207293A1
公开(公告)日：2011-08-25
申请号：US13125953
申请日：2009-10-29
申请人： Thomas Signamarcheix , Frank Fournel , Laurent Clavelier , Chrystel Deguet
发明人： Thomas Signamarcheix , Frank Fournel , Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/26
CPC分类号： H01L21/76254
摘要： A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallisation of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.
摘要翻译：一种混合基板的制造方法，其特征在于，制备包括混合层和下层电绝缘连续层的第一基板，由第一单晶区域和第二相邻非晶区域构成的混合层，构成第第一基板的自由表面。第二衬底被结合到第一衬底，第二衬底在其表面上包括具有预定晶体取向的参考层。第一衬底通过至少非晶区域的疏水分子键合而结合到第二衬底。根据参考层的结晶取向，至少部分非晶区域再结晶成固相，并在接合界面分离两个基板。

9. 发明授权

US08288250B2 Method for transferring chips onto a substrate 有权
标题翻译：将芯片转移到基板上的方法
公开(公告)号：US08288250B2
公开(公告)日：2012-10-16
申请号：US12564597
申请日：2009-09-22
申请人： Laurent Clavelier , Chrystel Deguet , Patrick Leduc , Hubert Moriceau
发明人： Laurent Clavelier , Chrystel Deguet , Patrick Leduc , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/7813 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A method for making a stack of at least two stages of circuits, each stage including a substrate and at least one component and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage including: a) ionic implantation in the substrate of the stage to be transferred through at least part of the components, so as to form a weakened zone, b) formation of metallic connections of the components, c) transfer and assembly of some of this substrate onto the previous stage, and d) a step to thin the transferred part of the substrate by fracture along the weakened zone.
摘要翻译：一种用于制造至少两级电路的堆叠的方法，每个级包括衬底和形成在该衬底中或之上的至少一个部件和金属连接，待传送到前一级的级的组件，包括：a）通过至少部分组分转移到待转移阶段的衬底中的离子注入，以便形成弱化区，b）形成组分的金属连接，c）将该衬底中的一些衬底转移并组装到先前的阶段，以及d）通过沿着弱化区域的断裂来稀释基底的转移部分的步骤。

10. 发明授权

US07608491B2 Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areas 失效
标题翻译：制造与硅基区域和GaAs基区域相关联的SOI衬底的方法
公开(公告)号：US07608491B2
公开(公告)日：2009-10-27
申请号：US11959924
申请日：2007-12-19
申请人： Laurent Clavelier , Chrystel Deguet
发明人： Laurent Clavelier , Chrystel Deguet
IPC分类号： H01L21/00
CPC分类号： H01L31/184 , C30B19/12 , C30B23/025 , C30B25/18 , C30B29/08 , C30B29/42 , G02B6/12004 , G02B6/43 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02543 , H01L21/02546 , H01L21/02625 , H01L21/02639 , H01L21/02647 , H01L21/8258 , H01L21/84 , H01L27/1203 , Y02E10/544
摘要： The invention relates to a method for manufacturing an SOI substrate, associating silicon based areas and areas of GaAs based material at the thin layer of the SOI substrate, the SOI substrate comprising a silicon support supporting successively a layer of dielectric material and a thin layer of silicon. The method comprises the following steps: supply of a SOI substrate comprising a silicon support mismatched by an angle of between 2° and 10° inclusive, the thin silicon based layer being oriented parallel to the plane (001) or (010), or (100) or (110) or (101) or (011) or (111), preservation of at least one area of the thin silicon layer, elimination of at least one non-preserved area of the thin silicon layer until the layer of dielectric material is revealed, opening, in said non-preserved area, of the layer of dielectric material until the silicon support is revealed, growth, from the silicon of the support revealed by said opening and by liquid phase epitaxy or by lateral epitaxy, of mismatched germanium on the layer of dielectric material revealed, growth of GaAs based material from the mismatched germanium obtained in the preceding step.
摘要翻译：本发明涉及一种用于制造SOI衬底的方法，该SOI衬底的薄层将基于硅的区域和GaAs基材料的区域相关联，所述SOI衬底包括依次支撑介电材料层和硅层的薄层硅。该方法包括以下步骤：提供包含不同于2°和10°之间角度的硅载体的SOI衬底，所述薄硅基层平行于平面（001）或（010）或（010）定向，或（ 100）或（110）或（101）或（011）或（111），保存薄硅层的至少一个区域，消除薄硅层的至少一个未保存区域直到电介质层在所述非保存区域中，揭示介质材料层的开口，直到硅支撑体露出，从由所述开口显示的支撑体的硅和通过液相外延或横向外延生长的不匹配的介电材料层上的锗显示出，在前面步骤中获得的来自错配锗的GaAs基材料的生长。

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