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1. 发明申请

US20080268615A1 Treatment of a Germanium Layer Bonded with a Substrate 审中-公开
标题翻译：用基材粘合的锗层的处理
公开(公告)号：US20080268615A1
公开(公告)日：2008-10-30
申请号：US12090318
申请日：2006-10-17
申请人： Frederic Allibert , Chrystel Deguet , Claire Richtarch
发明人： Frederic Allibert , Chrystel Deguet , Claire Richtarch
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours.The invention also relates to a method to produce a structure comprising a Ge layer, the method comprising bonding between a donor substrate comprising at least in the upper part thereof a thin Ge layer and a receiving substrate, characterised in that it comprises the following steps: (a) bonding of the donor with the receiving substrate such that the Ge layer is located in proximity to the bonding interface; (b) removal of the part of the donor substrate not comprising the Ge layer; (c) treatment of the structure comprising the receiving substrate and the Ge layer in accordance with said treatment method.
摘要翻译：本发明涉及一种结构的处理方法，该方法包括在衬底上的薄Ge层，所述层已预先与衬底接合，该方法包括改善Ge层的电性能和/或Ge界面的处理层，其特征在于所述处理是在500℃和600℃之间的温度下施加不超过3小时的热处理。本发明还涉及一种产生包括Ge层的结构的方法，该方法包括至少在其上部包括薄Ge层和接收衬底之间的施主衬底之间的结合，其特征在于包括以下步骤：（a）将所述施主与所述接收基板接合，使得所述Ge层位于所述接合界面附近; （b）去除不包括Ge层的供体衬底的部分; （c）根据所述处理方法处理包括接收衬底和Ge层的结构。

2. 发明申请

US20050020084A1 Method of preparing a surface of a semiconductor wafer to make it epiready 失效
标题翻译：制备半导体晶片表面的方法，以使其成为后续的
公开(公告)号：US20050020084A1
公开(公告)日：2005-01-27
申请号：US10671812
申请日：2003-09-25
申请人： Claire Richtarch
发明人： Claire Richtarch
IPC分类号： B24B37/04 , H01L21/04 , H01L21/469
CPC分类号： B24B37/042 , H01L21/02024 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/0254 , H01L21/02658 , H01L29/1608 , Y10S438/931
摘要： The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.
摘要翻译：本发明涉及一种制备用于微电子学和/或光电应用的半导体晶片的表面的方法。特别地，描述了制备半导体晶片的SiC表面以制作其后视的方法。该技术包括在氧化气氛中退火晶片，并用基于胶体二氧化硅颗粒的研磨剂抛光晶片的表面，以使SiC晶片表面适合于同质外延或异质外延。

3. 发明授权

US07060620B2 Method of preparing a surface of a semiconductor wafer to make it epiready 失效
标题翻译：制备半导体晶片表面的方法，以使其成为后续的
公开(公告)号：US07060620B2
公开(公告)日：2006-06-13
申请号：US10671812
申请日：2003-09-25
申请人： Claire Richtarch
发明人： Claire Richtarch
IPC分类号： H01L21/302 , H01L21/461 , H01L21/469 , H01L21/31
CPC分类号： B24B37/042 , H01L21/02024 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/0254 , H01L21/02658 , H01L29/1608 , Y10S438/931
摘要： The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.
摘要翻译：本发明涉及一种制备用于微电子学和/或光电应用的半导体晶片的表面的方法。特别地，描述了制备半导体晶片的SiC表面以制作其后视的方法。该技术包括在氧化气氛中退火晶片，并用基于胶体二氧化硅颗粒的研磨剂抛光晶片的表面，以使SiC晶片表面适合于同质外延或异质外延。

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