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1. 发明申请

US20120132832A1 PASSIVE TERAHERTZ RADIATION SOURCE 有权
标题翻译：被动TERAHERTZ辐射源
公开(公告)号：US20120132832A1
公开(公告)日：2012-05-31
申请号：US13377485
申请日：2009-06-09
申请人： Thomas Dekorsy , Gregor Klatt , Georg Bastian , Klaus Huska
发明人： Thomas Dekorsy , Gregor Klatt , Georg Bastian , Klaus Huska
IPC分类号： G02F2/02
CPC分类号： H01S1/02 , G02F1/353 , G02F2203/13
摘要： The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.
摘要翻译：本发明涉及被配置为发射频率在10GHz至50Hz范围内的电磁辐射的被动太赫兹辐射源以及用于产生太赫兹辐射的方法。被动太赫兹辐射源包括：脉冲激发光源; 发射器，其包括一个或多个发射极元件，每个发射极元件包括半导体层，所述半导体层被布置成使得所述半导体层的第一主表面的至少一部分暴露于激发光，其中每个发射极元件构造成使得在暴露时对于激发光，在半导体层的第一区域和半导体层的第二区域之间的过渡区域中的半导体层中产生电荷载流子密度的梯度，该梯度基本上平行于第一主表面的半导体层。

2. 发明授权

US08563955B2 Passive terahertz radiation source 有权
标题翻译：被动太赫兹辐射源
公开(公告)号：US08563955B2
公开(公告)日：2013-10-22
申请号：US13377485
申请日：2009-06-09
申请人： Thomas Dekorsy , Gregor Klatt , Georg Bastian , Klaus Huska
发明人： Thomas Dekorsy , Gregor Klatt , Georg Bastian , Klaus Huska
IPC分类号： G02F2/02
CPC分类号： H01S1/02 , G02F1/353 , G02F2203/13
摘要： The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.
摘要翻译：本发明涉及被配置为发射频率在10GHz至50Hz范围内的电磁辐射的被动太赫兹辐射源以及用于产生太赫兹辐射的方法。被动太赫兹辐射源包括：脉冲激发光源; 发射器，其包括一个或多个发射极元件，每个发射极元件包括半导体层，所述半导体层被布置成使得所述半导体层的第一主表面的至少一部分暴露于激发光，其中每个发射极元件构造成使得在暴露时对于激发光，在半导体层的第一区域和半导体层的第二区域之间的过渡区域中的半导体层中产生电荷载流子密度的梯度，该梯度基本上平行于第一主表面的半导体层。

3. 发明授权

US07848376B2 Quantum cascade laser structure 有权
标题翻译：量子级联激光器结构
公开(公告)号：US07848376B2
公开(公告)日：2010-12-07
申请号：US12171169
申请日：2008-07-10
申请人： William Ted Masselink , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
发明人： William Ted Masselink , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/1096 , H01S5/141 , H01S5/3406
摘要： A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).
摘要翻译：根据本发明的量子级联激光器结构包括多个级联（100），每个级联包括多个交替布置的量子阱（110a至110j）和阻挡层（105至105j）。至少一个量子阱（110a至110j）的材料以及至少一个阻挡层（105至105j）的材料处于机械应变下，其各自的应变是拉伸应变或压缩应变。根据本发明，量子阱（110a至110j）和势垒层（105至105j）被设计在量子级联激光器结构中，使得现有的应变在级联（100）内大量补偿。在根据本发明的量子级联激光器结构中，量子阱（110a至110j）的每种材料仅具有一种构成材料，并且至少一个阻挡层（105d，105e，105f）的材料具有至少两种构成材料（111a，111b，112a，112b，113a，113b）。

4. 发明申请

US20090034570A1 QUANTUM CASCADE LASER STRUCTURE 有权
标题翻译：量子CASCADE激光结构
公开(公告)号：US20090034570A1
公开(公告)日：2009-02-05
申请号：US12171169
申请日：2008-07-10
申请人： William Ted MASSELINK , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
发明人： William Ted MASSELINK , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
IPC分类号： H01S5/026
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/1096 , H01S5/141 , H01S5/3406
摘要： A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).
摘要翻译：根据本发明的量子级联激光器结构包括多个级联（100），每个级联包括多个交替布置的量子阱（110a至110j）和阻挡层（105至105j）。至少一个量子阱（110a至110j）的材料以及至少一个阻挡层（105至105j）的材料处于机械应变下，其各自的应变是拉伸应变或压缩应变。根据本发明，量子阱（110a至110j）和势垒层（105至105j）被设计在量子级联激光器结构中，使得现有的应变在级联（100）内大量补偿。在根据本发明的量子级联激光器结构中，量子阱（110a至110j）的每种材料仅具有一种构成材料，并且至少一个阻挡层（105d，105e，105f）的材料具有至少两种构成材料（111a，111b，112a，112b，113a，113b）。

5. 发明申请

US20050213627A1 Quantum cascade laser structure 审中-公开
标题翻译：量子级联激光器结构
公开(公告)号：US20050213627A1
公开(公告)日：2005-09-29
申请号：US11061726
申请日：2005-02-22
申请人： William Masselink , Sebastian Dressler , Mykhaylo Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
发明人： William Masselink , Sebastian Dressler , Mykhaylo Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
IPC分类号： H01S5/00 , H01S5/024 , H01S5/14 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/1096 , H01S5/141 , H01S5/3406
摘要： A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).
摘要翻译：根据本发明的量子级联激光器结构包括多个级联（100），每个级联（100）包括多个交替布置的量子阱（110a至110j）和阻挡层（105至105j）。至少一个量子阱（110a至110j）的材料以及至少一个阻挡层（105至105j）的材料处于机械应变下，相应的应变是拉伸应变或压缩应变。根据本发明，量子阱（110a至110j）和阻挡层（105至105j）被设计在量子级联激光器结构中，使得现有的应变在级联（100）内被大量补偿。在根据本发明的量子级联激光器结构中，量子阱（110a至110j）的每种材料仅具有一种构成材料，并且至少一个阻挡层（105d，105e，105f）的材料具有至少两个构成材料（111a，111b，112a，112b，113a，113b）。

6. 发明授权

US06618423B1 Passively mode-coupled femtosecond laser 有权
标题翻译：被动模式耦合飞秒激光
公开(公告)号：US06618423B1
公开(公告)日：2003-09-09
申请号：US09979165
申请日：2002-02-20
申请人： Thomas Dekorsy , Albrecht Bartels , Heinrich Kurz
发明人： Thomas Dekorsy , Albrecht Bartels , Heinrich Kurz
IPC分类号： H01S3083
CPC分类号： H01S3/1112 , H01S3/0057 , H01S3/08 , H01S3/0811 , H01S3/0813 , H01S3/083 , H01S3/1305 , H01S3/1625 , H01S3/1636 , H01S2301/08
摘要： The invention relates to a passive mode locked femtosecond laser whose ring resonator comprises the elements: a) a laser-active element 1, b) at least a dielectric mirror 2 having a negative group velocity dispersion GVD such that for a continuous part of the optical spectrum amplifieable by the laser-active element the sum of the group velocity dispersion of the mirror 2 and the positive group velocity dispersion of the laser-active element 1 is negative, i.e. ∑ n ⁢ GVD n
摘要翻译：本发明涉及一种无源模式锁定飞秒激光器，其环形谐振器包括以下元件：a）激光有源元件1，b）至少具有负组速度色散GVD的电介质镜2，使得对于连续部分的光学通过激光有源元件可扩展的光谱，反射镜2的组速度色散和激光有源元件1的正组速度色散的总和为负，即，两个凹面镜21和22，其彼此相邻激光有源元件，并且它们的凹面朝向激光有源元件1定向，d）光输出耦合器3.谐振器中的光路长度低于60cm，有利地在30cm以下，特别是低于15cm 凹面镜21和22的焦距f21和f22低于3cm，有利地低于2cm，特别地低于或等于1.5cm，使得飞秒脉冲的高重复产生本发明还涉及连续可调高重复率飞秒激光器，其用于飞秒脉冲高重复产生的方法及其调谐方法。

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