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1. 发明申请

US20050213627A1 Quantum cascade laser structure 审中-公开
标题翻译：量子级联激光器结构
公开(公告)号：US20050213627A1
公开(公告)日：2005-09-29
申请号：US11061726
申请日：2005-02-22
申请人： William Masselink , Sebastian Dressler , Mykhaylo Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
发明人： William Masselink , Sebastian Dressler , Mykhaylo Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
IPC分类号： H01S5/00 , H01S5/024 , H01S5/14 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/1096 , H01S5/141 , H01S5/3406
摘要： A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).
摘要翻译：根据本发明的量子级联激光器结构包括多个级联（100），每个级联（100）包括多个交替布置的量子阱（110a至110j）和阻挡层（105至105j）。至少一个量子阱（110a至110j）的材料以及至少一个阻挡层（105至105j）的材料处于机械应变下，相应的应变是拉伸应变或压缩应变。根据本发明，量子阱（110a至110j）和阻挡层（105至105j）被设计在量子级联激光器结构中，使得现有的应变在级联（100）内被大量补偿。在根据本发明的量子级联激光器结构中，量子阱（110a至110j）的每种材料仅具有一种构成材料，并且至少一个阻挡层（105d，105e，105f）的材料具有至少两个构成材料（111a，111b，112a，112b，113a，113b）。

2. 发明申请

US20060274803A1 Quantum well structure 失效
标题翻译：量子阱结构
公开(公告)号：US20060274803A1
公开(公告)日：2006-12-07
申请号：US10566431
申请日：2004-06-11
申请人： William Masselink , Mykhaylo Semtsiv
发明人： William Masselink , Mykhaylo Semtsiv
IPC分类号： H01L31/00 , H01S5/00 , H01L29/06
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/125 , H01L29/205 , H01L31/0352 , H01L31/035236
摘要： A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) which compensate or modulate a lateral homogeneity of the barrier layer (109), that exists without the nanostructures (110), that is to say a homogeneity in the directions extending perpendicularly to the stacking direction of the layers in the quantum well structure.
摘要翻译：根据本发明的量子阱结构包括布置在两个阻挡层（109,112）之间的量子阱层（107）。区别在于阻挡层（109）中的至少一个包括补偿或调制不存在纳米结构（110）的阻挡层（109）的横向均匀性的纳米结构（110），即均匀性在垂直于量子阱结构中的层的层叠方向延伸的方向上。

3. 发明申请

US20120091916A1 RADIATION SOURCE 审中-公开
标题翻译：辐射源
公开(公告)号：US20120091916A1
公开(公告)日：2012-04-19
申请号：US12905049
申请日：2010-10-14
申请人： Mykhaylo SEMTSIV , William Masselink
发明人： Mykhaylo SEMTSIV , William Masselink
IPC分类号： H05B37/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01L33/06 , H01L33/08 , H01S5/0622
摘要： An embodiment of the invention relates to a cascade semiconductor light source comprising:a first block of cascades and a first contact region coupled to said first cascade, the first contact region being capable of injecting carriers into the first cascade of the first block; anda second block of cascades and a second contact region coupled to said second cascade, the second contact region being capable of injecting carriers into the second cascade;wherein the application of a first polarity voltage to said light source results in the cascades in the first block to be in an active mode and the cascades in the second block to be in an inactive mode;wherein the application of a second, opposite polarity voltage to said light source results in the cascades in the first block to be in an inactive mode and the cascades in the second block to be in an active mode;wherein the first block of cascades is adapted to emit light at a first wavelength in its active mode and to passively conduct electrical current in its inactive mode; and wherein the second block of cascades is adapted to emit light at a second wavelength in its active mode and to passively conduct electrical current in its inactive mode.
摘要翻译：本发明的实施例涉及一种级联半导体光源，包括：第一级联块和耦合到所述第一级联的第一接触区，所述第一接触区能够将载流子注入所述第一块的第一级联; 以及耦合到所述第二级联的级联和第二接触区域的第二块，所述第二接触区域能够将载流子注入到所述第二级联中; 其中向所述光源施加第一极性电压导致所述第一块中的级联处于活动模式，并且所述第二块中的级联处于非活动模式; 其中向所述光源施加第二相反极性电压导致所述第一块中的级联处于非活动模式，并且所述第二块中的级联处于活动模式; 其中所述第一级联块适于以其活动模式发射第一波长的光并在其非活动模式下被动地导通电流; 并且其中所述第二级联块适于以其活动模式发射第二波长的光并且在其非活动模式下被动地传导电流。

4. 发明申请

US20070210315A1 Semiconductor Device For Emitting Light 审中-公开
标题翻译：用于发光的半导体器件
公开(公告)号：US20070210315A1
公开(公告)日：2007-09-13
申请号：US10574512
申请日：2004-09-30
申请人： William Masselink , Fariba Hatami
发明人： William Masselink , Fariba Hatami
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/30 , H01L2924/0002 , H01S5/3412 , H01S5/34306 , H01L2924/00
摘要： A semiconductor device according to the invention for emitting light when a voltage is applied includes a first (3), a second (5) and a third active semiconductor region (7A-7C). While the conductivity of the first semiconductor region (3) is based on charge carriers of a first conductivity type, the conductivity of the second semiconductor region (5) is based on charge carriers of a second conductivity type, which have a charge opposite to the charge carriers of the first conductivity type The active semiconductor region (5 13) is arranged between the first and the second semiconductor regions (3, 5). Embedded in the active semiconductor region (5) are quantum structures (13) which are made from a semiconductor material which has a direct band gap. In that respect the term quantum structures is used to denote structures which in at least one direction of extent are of a dimension which is so small that the properties of the structure are substantially also determined by quantum-mechanical processes.
摘要翻译：根据本发明的用于在施加电压时发光的半导体器件包括第一（3），第二（5）和第三有源半导体区（7A-7C）。虽然第一半导体区域（3）的电导率基于第一导电类型的电荷载流子，但是第二半导体区域（5）的导电性基于第二导电类型的电荷载流子，其具有与第一导电类型的电荷载流子有源半导体区域（5,13）布置在第一和第二半导体区域（3,5）之间。嵌入有源半导体区域（5）中的是由具有直接带隙的半导体材料制成的量子结构（13）。在这方面，术语“量子结构”用于表示至少一个方向上的结构的尺寸如此小以致结构的性质基本上也由量子力学过程确定。

5. 发明申请

US20120207186A1 TERAHERTZ QUANTUM CASCADE LASERS (QCLS) 审中-公开
标题翻译： TERAHERTZ QUANTUM CASCADE LASERS（QCLS）
公开(公告)号：US20120207186A1
公开(公告)日：2012-08-16
申请号：US13148459
申请日：2010-02-16
申请人： Mikhail Belkin , William Masselink
发明人： Mikhail Belkin , William Masselink
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S2302/02
摘要： Quantum cascade lasers (QCLs), and methods of manufacture of QCLs, comprising an active portion. In some embodiments, the active portion can comprise: a plurality of tensiley strained quantum barrier layers, each comprising GayIn1-yAs; and a plurality of compressively strained quantum well layers, each comprising GaxIn1-xAs. In some embodiments, the active portion can comprise: a plurality of compressively strained quantum barrier layers, each comprising AlyIn1-yAs; and a plurality of tensiley strained quantum well layers, each comprising GaxIn1-xAs. The active portion can be grown on InP substrate.
摘要翻译：量子级联激光器（QCL）以及QCL的制造方法，其包括有源部分。在一些实施方案中，活性部分可以包括：多个拉伸应变量子势垒层，每个包含GayIn1-yAs; 以及多个压缩应变量子阱层，每个包括GaxIn1-xAs。在一些实施例中，有源部分可以包括：多个压缩应变量子势垒层，每个包含AlyIn1-yAs; 和多个拉伸应变量子阱层，每个包含GaxIn1-xAs。活性部分可以在InP衬底上生长。

6. 发明申请

US20070114538A1 Light-emitting semiconductor devices having variable emission wavelengths 审中-公开
标题翻译：具有可变发射波长的发光半导体器件
公开(公告)号：US20070114538A1
公开(公告)日：2007-05-24
申请号：US10584882
申请日：2004-12-24
申请人： Fariba Hatami , William Masselink
发明人： Fariba Hatami , William Masselink
IPC分类号： H01L31/0256
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01L2924/0002 , H01L2924/00
摘要： An inventive semiconductor device for emitting light when applying a voltage comprises: a first semiconductor region (3) whose conductivity is based on charge carriers of a first type of conductivity, e.g. electrons; a second semiconductor region (5) whose conductivity is based on charge carriers of a second type of conductivity, e.g. holes, which have a charge opposite that of the charge carriers of the first type of conductivity and; an active semiconductor region (7A 7C), which is situated between the first semiconductor region (3) and the second semiconductor region (5) and in which the emission of light occurs, these regions being embedded in the quantum structures (13, 15) of a semiconductor material having a direct band gap in at least two different intercoupled configurations. In addition, a switching device (20) for directly or indirectly influencing the current flowing through the active semiconductor region (7A 7C) is assigned to the inventive semiconductor device and is designed for switching back and forth at least between a current flowing through the active semiconductor region with a current intensity (H1) less than a specified threshold current intensity and a current flowing through the active semiconductor region with a current intensity (H2) greater than the threshold current intensity.
摘要翻译：用于在施加电压时发光的本发明的半导体器件包括：第一半导体区域（3），其导电性基于第一类导电性的电荷载流子，例如，电子第二半导体区域（5），其导电性基于第二导电类型的电荷载流子，例如。其具有与第一类型导电性的电荷载流子的电荷相反的电荷; 位于第一半导体区域（3）和第二半导体区域（5）之间并且发生光发射的有源半导体区域（7A），这些区域嵌入量子结构（13，在至少两个不同的互耦合配置中具有直接带隙的半导体材料。此外，用于直接或间接地影响流过有源半导体区域（7A）的电流的开关装置（20）被分配给本发明的半导体器件，并被设计用于至少在流过电流的电流之间来回切换具有小于规定阈值电流强度的电流强度（H 1）的有源半导体区域和流过有源半导体区域的电流，其电流强度（H 2）大于阈值电流强度。

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