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1. 发明授权

US08971369B2 Quantum cascade laser structure 有权
标题翻译：量子级联激光器结构
公开(公告)号：US08971369B2
公开(公告)日：2015-03-03
申请号：US13443244
申请日：2012-04-10
申请人： William Ted Masselink , Mykhaylo Petrovych Semtsiv
发明人： William Ted Masselink , Mykhaylo Petrovych Semtsiv
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3415
摘要： A quantum cascade laser structure having a plurality of cascades each of which comprises a number of alternately arranged quantum wells and barriers of different thicknesses and heights, wherein at least one of the quantum wells and at least one of the barriers is under mechanical strain and the quantum wells and the barriers are coordinated such that the existing mechanical strains are largely compensated within one cascade, wherein each of the barriers comprise one or more barrier layers, wherein each cascade comprises a thinnest quantum well, a lowest barrier, a thickest quantum well, a highest barrier, and the highest barrier is followed by alternately arranged quantum wells and barriers.
摘要翻译：具有多个级联的量子级联激光器结构，每个级联包括多个交替布置的量子阱和不同厚度和高度的阻挡层，其中至少一个量子阱和至少一个屏障处于机械应变之下，并且量子阱和屏障被协调，使得现有的机械应变在一个级联内大量补偿，其中每个屏障包括一个或多个阻挡层，其中每个级联包括最薄的量子阱，最低势垒，最厚的量子阱，最高的屏障，最高的屏障是交替排列的量子阱和屏障。

2. 发明申请

US20130266036A1 QUANTUM CASCADE LASER STRUCTURE 有权
标题翻译：量子CASCADE激光结构
公开(公告)号：US20130266036A1
公开(公告)日：2013-10-10
申请号：US13443244
申请日：2012-04-10
申请人： William Ted MASSELINK , Mykhaylo Petrovych Semtsiv
发明人： William Ted MASSELINK , Mykhaylo Petrovych Semtsiv
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3415
摘要： A quantum cascade laser structure having a plurality of cascades each of which comprises a number of alternately arranged quantum wells and barriers of different thicknesses and heights, wherein at least one of the quantum wells and at least one of the barriers is under mechanical strain and the quantum wells and the barriers are coordinated such that the existing mechanical strains are largely compensated within one cascade, wherein each of the barriers comprise one or more barrier layers, wherein each cascade comprises a thinnest quantum well, a lowest barrier, a thickest quantum well, a highest barrier, and the highest barrier is followed by alternately arranged quantum wells and barriers.
摘要翻译：具有多个级联的量子级联激光器结构，每个级联包括多个交替布置的量子阱和不同厚度和高度的阻挡层，其中至少一个量子阱和至少一个屏障处于机械应变之下，并且量子阱和屏障被协调，使得现有的机械应变在一个级联内大量补偿，其中每个屏障包括一个或多个阻挡层，其中每个级联包括最薄的量子阱，最低势垒，最厚的量子阱，最高的屏障，最高的屏障是交替排列的量子阱和屏障。

3. 发明授权

US07848376B2 Quantum cascade laser structure 有权
标题翻译：量子级联激光器结构
公开(公告)号：US07848376B2
公开(公告)日：2010-12-07
申请号：US12171169
申请日：2008-07-10
申请人： William Ted Masselink , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
发明人： William Ted Masselink , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/1096 , H01S5/141 , H01S5/3406
摘要： A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).
摘要翻译：根据本发明的量子级联激光器结构包括多个级联（100），每个级联包括多个交替布置的量子阱（110a至110j）和阻挡层（105至105j）。至少一个量子阱（110a至110j）的材料以及至少一个阻挡层（105至105j）的材料处于机械应变下，其各自的应变是拉伸应变或压缩应变。根据本发明，量子阱（110a至110j）和势垒层（105至105j）被设计在量子级联激光器结构中，使得现有的应变在级联（100）内大量补偿。在根据本发明的量子级联激光器结构中，量子阱（110a至110j）的每种材料仅具有一种构成材料，并且至少一个阻挡层（105d，105e，105f）的材料具有至少两种构成材料（111a，111b，112a，112b，113a，113b）。

4. 发明申请

US20090034570A1 QUANTUM CASCADE LASER STRUCTURE 有权
标题翻译：量子CASCADE激光结构
公开(公告)号：US20090034570A1
公开(公告)日：2009-02-05
申请号：US12171169
申请日：2008-07-10
申请人： William Ted MASSELINK , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
发明人： William Ted MASSELINK , Sebastian Dressler , Mykhaylo Petrovych Semtsiv , Nikolai Georgiev , Manfred Helm , Thomas Dekorsy , Mathias Ziegler
IPC分类号： H01S5/026
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/1096 , H01S5/141 , H01S5/3406
摘要： A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).
摘要翻译：根据本发明的量子级联激光器结构包括多个级联（100），每个级联包括多个交替布置的量子阱（110a至110j）和阻挡层（105至105j）。至少一个量子阱（110a至110j）的材料以及至少一个阻挡层（105至105j）的材料处于机械应变下，其各自的应变是拉伸应变或压缩应变。根据本发明，量子阱（110a至110j）和势垒层（105至105j）被设计在量子级联激光器结构中，使得现有的应变在级联（100）内大量补偿。在根据本发明的量子级联激光器结构中，量子阱（110a至110j）的每种材料仅具有一种构成材料，并且至少一个阻挡层（105d，105e，105f）的材料具有至少两种构成材料（111a，111b，112a，112b，113a，113b）。

5. 发明授权

US07893425B2 Quantum well structure 失效
标题翻译：量子阱结构
公开(公告)号：US07893425B2
公开(公告)日：2011-02-22
申请号：US10566431
申请日：2004-06-11
申请人： William Ted Masselink , Mykhaylo Petrovych Semtsiv
发明人： William Ted Masselink , Mykhaylo Petrovych Semtsiv
IPC分类号： H01L31/00
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/125 , H01L29/205 , H01L31/0352 , H01L31/035236
摘要： A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) which compensate or modulate a lateral homogeneity of the barrier layer (109), that exists without the nanostructures (110), that is to say a homogeneity in the directions extending perpendicularly to the stacking direction of the layers in the quantum well structure.
摘要翻译：根据本发明的量子阱结构包括布置在两个阻挡层（109,112）之间的量子阱层（107）。区别在于阻挡层（109）中的至少一个包括补偿或调制不存在纳米结构（110）的阻挡层（109）的横向均匀性的纳米结构（110），即均匀性在垂直于量子阱结构中的层的层叠方向延伸的方向上。

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