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    • 10. 发明申请
    • Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    • 在电介质区域上形成掩模层,以便在由电介质区域分隔的导电区域上形成覆盖层
    • US20060264020A1
    • 2006-11-23
    • US11132841
    • 2005-05-18
    • David LazovskySandra MalhotraThomas Boussie
    • David LazovskySandra MalhotraThomas Boussie
    • H01L21/44
    • H01L21/76829B82Y30/00H01L21/02183H01L21/3148H01L21/31633H01L21/31695H01L21/3185H01L21/76826H01L21/76849
    • A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.
    • 在电子器件的电介质区域上形成掩模层,使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时,掩模层阻止在其上形成覆盖层材料 在电介质区域。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下(特别是在后者中),可以随后去除在电介质区域上形成的覆盖层材料,从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电材料(例如,钴合金,镍合金,钨,钽,氮化钽),半导体材料或电绝缘材料形成,并且可以使用任何适当的工艺形成,包括 常规沉积工艺如无电沉积,化学气相沉积,物理气相沉积或原子层沉积。