专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5116462A Method of producing micromechanical sensors for the AFM/STM profilometry 失效
标题翻译：生产用于AFM / STM特性测定的微观传感器的方法
公开(公告)号：US5116462A
公开(公告)日：1992-05-26
申请号：US568286
申请日：1990-08-16
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B44C1/22 , B81C1/00 , C03C15/00 , C23F1/00 , G01N27/00 , G01Q60/04 , G01Q70/16 , H01J37/28 , H01L21/306 , H01L41/09
CPC分类号： G01Q60/04 , B82Y35/00 , G01Q70/16
摘要： A micromechanical sensor is described for the AFM/STM profilometry, incorporating a cantilever beam with at least one tip at its end and a mounting block at the opposite end. A method is described incorporating the steps of coating a wafer substrate with an insulating layer, forming a mask in the insulating layer, etching a trench in the wafer substrate, removing the insulating layer, coating the desired cantilever beam and tip material, respectively, etching the cantilever beam and tip material, and removing at least a portion of the supporting wafer material from the bottom side. The invention overcomes the problem of forming a micromechanical sensor having a cantilever beam, a tip with a predetermined shape and a mounting block.
摘要翻译：描述了一种用于制造用于AFM / STM轮廓测量法的微机械传感器的方法，该方法由其端部具有至少一个尖端的悬臂梁和相对的一个安装块组成，包括：1.用绝缘层双面涂覆晶片衬底 ; 3，使用第一光刻步骤和反应离子蚀刻法，在晶片的顶侧上的绝缘层中制造掩模以用于将来的沟槽或凹槽蚀刻，以及在晶片的底侧的绝缘层中的掩模。通过反应离子或各向异性湿蚀刻分别在晶片衬底中产生沟槽或凹槽，然后通过蚀刻从顶侧除去绝缘层：4.用所需的悬臂涂覆晶片表面和沟槽或凹槽梁和尖端材料; 分别在第二光刻步骤和干蚀刻或湿蚀刻步骤中对悬臂梁和尖端进行抛光; 以及6.通过底面掩模的各向异性湿蚀刻从底侧移除支撑晶片材料。在优选的实施例中，悬臂梁的顶侧上的与底部的剩余片晶片相对应的区域在约300℃和1000V下通过“隆隆”键合与玻璃块接合。此外，表面可以在第一步骤中涂覆具有非共形步骤覆盖的材料，并且在具有保形阶段覆盖层的材料的第二步中涂覆晶片衬底和沟槽。悬臂梁和尖端在保形台阶覆盖层中露出，并通过底侧掩模的选择性蚀刻去除支撑晶片和非共形台阶覆盖层。本发明还包括用于AFM / STM轮廓测量的微机械传感器，其由一件材料微机械地制造。

2. 发明授权

US5162133A Process for fabricating silicon carbide films with a predetermined stress 失效
标题翻译：用于制造具有预定应力的碳化硅膜的工艺
公开(公告)号：US5162133A
公开(公告)日：1992-11-10
申请号：US631138
申请日：1990-12-20
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Olaf Wolter
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Olaf Wolter
IPC分类号： C01B31/36 , C23C16/32 , C23C16/50 , C23C16/52 , G01Q30/12
CPC分类号： C23C16/325
摘要： The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps:a) introducing a gas mixture of silane (SiH.sub.4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber;b) reacting the silane and ethylene at a temperature >400.degree. C., and in a total pressure range of about 26.6 to 266 Pa, at an RF power
摘要翻译：本发明涉及通过控制沉积参数来制造具有预定应力的碳化硅膜和膜的方法，其包括以下步骤：a）以大约流速引入硅烷（SiH4）/氦和乙烯的气体混合物 1000 sccm / min。和约10sccm / min。进入反应室; b）在温度> 400℃，总压力范围约26.6至266Pa，在13.56MHz的RF功率<100W下使硅烷和乙烯反应，所述硅烷和乙烯之间的反应开始并通过辉光放电增强。在优选的实施方案中，本征薄膜应力是拉伸，硅烷和乙烯在约500℃的温度下，总压力范围超过106.4Pa，在13.56MHz的RF功率为75W下反应。拉伸应力膜可以涂覆有金属吸收层，在吸收层中产生期望的掩模图案，并且从湿蚀刻的背面去除基底。所得的X射线掩模具有光滑的表面，优异的尺寸稳定性和X射线辐射的透明度。

3. 发明授权

US5051379A Method of producing micromechanical sensors for the AFM/STM profilometry and micromechanical AFM/STM sensor head 失效
标题翻译：用于AFM / STM轮廓测量和微机械AFM / STM传感器头的微机械传感器的生产方法
公开(公告)号：US5051379A
公开(公告)日：1991-09-24
申请号：US568306
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B81C1/00 , C23F1/00 , G01N27/00 , G01Q60/16 , G01Q60/38 , G01Q70/02 , G02B21/00 , H01J37/28 , H01L21/302 , H01L41/09
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/04 , G01Q60/38
摘要： A method and apparatus is described for a micromechanical sensor for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite end. The method incorporated the steps of coating a wafer substrate; producing a mask for the desired cantilever beam pattern on the top side of the wafer; and a mask on the bottom side of the wafer; planarizing said cantilever beam pattern with photoresist; producing a mask for the desired tip in the area of the cantilever beam pattern producing the desired tip using an etching step, and simultaneously transferring the cantilever beam pattern from the upper to the lower part of the layer; and removing the supporting wafer material by etching through the bottom side mask. A mask for the desired cantilever beam pattern and the tip pattern contains all relevant information for a subsequent substrate etching process is described for etching step by step into a silicon substrate.

4. 发明授权

US06218264B1 Method of producing a calibration standard for 2-D and 3-D profilometry in the sub-nanometer range 失效
标题翻译：在亚纳米范围内制作2-D和3-D轮廓测量法的校准标准的方法
公开(公告)号：US06218264B1
公开(公告)日：2001-04-17
申请号：US09314410
申请日：1999-05-19
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher , Helga Weiss
IPC分类号： H01L21311
CPC分类号： G01Q40/02 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.
摘要翻译：校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。这些结构具有在约500nm范围内相同的宽度。单晶材料优选为具有（110）取向的硅。一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

5. 发明授权

US5960255A Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it 失效
标题翻译：亚纳米范围内二维和三维轮廓测量的校准标准及其制作方法
公开(公告)号：US5960255A
公开(公告)日：1999-09-28
申请号：US842307
申请日：1997-04-24
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
IPC分类号： B32B9/00 , G01B5/20 , G01Q60/00 , G01R31/26 , H01L21/00 , H01L21/311 , H01L21/66 , H01L21/76
CPC分类号： G01Q40/02 , B82Y35/00 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.
摘要翻译：校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。这些结构具有在约500nm范围内相同的宽度。单晶材料优选为具有（110）取向的硅。一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

6. 发明授权

US5534359A Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it 失效
公开(公告)号：US5534359A
公开(公告)日：1996-07-09
申请号：US255209
申请日：1994-06-07
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
IPC分类号： B32B9/00 , G01B5/20 , G01Q60/00 , G01R31/26 , H01L21/00 , H01L21/311 , H01L21/66 , H01L21/76
CPC分类号： G01Q40/02 , B82Y35/00 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.

7. 发明授权

US5665905A Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it 失效
标题翻译：亚纳米范围内二维和三维轮廓测量的校准标准及其制作方法
公开(公告)号：US5665905A
公开(公告)日：1997-09-09
申请号：US472100
申请日：1995-06-07
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
IPC分类号： B32B9/00 , G01B5/20 , G01Q60/00 , G01R31/26 , H01L21/00 , H01L21/311 , H01L21/66 , H01L21/76
CPC分类号： G01Q40/02 , B82Y35/00 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A method for measuring the width of a tip in an Atomic Force Microscope/Scanning Tunneling Microscope using a calibration standard is provided. The method incorporates the steps of providing a tip, measuring the width b1 of a first kind of structure, and measuring the width b2 of a second kind of structure. The steps of measuring comprise the steps of profiling the first and second kinds of structures with a tip and calculating the width of the tip as a function of the measured widths b1 and b2. The calibration standard comprises the first and second kinds of structures and may be, for example, a trench and a raised line which have substantially the same width.
摘要翻译：提供了使用校准标准测量原子力显微镜/扫描隧道显微镜中尖端宽度的方法。该方法包括提供尖端，测量第一种结构的宽度b1和测量第二种结构的宽度b2的步骤。测量步骤包括用尖端分析第一和第二种结构的步骤，并根据测量的宽度b1和b2计算尖端的宽度。校准标准包括第一种和第二种结构，并且可以是例如具有基本上相同宽度的沟槽和凸起线。

8. 发明授权

US4969415A PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides 失效
公开(公告)号：US4969415A
公开(公告)日：1990-11-13
申请号：US458006
申请日：1989-12-28
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
IPC分类号： C23C16/08 , C23C16/30 , C23C16/448 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4488 , C23C16/08 , H01L21/28556 , Y10S148/147
摘要： The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

9. 发明授权

US4918033A PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides 失效
标题翻译： PECVD（等离子体增强化学气相沉积）方法，用于通过原位形成氟化钨沉积钨或钨层
公开(公告)号：US4918033A
公开(公告)日：1990-04-17
申请号：US239569
申请日：1988-09-01
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
IPC分类号： C23C16/08 , C23C16/30 , C23C16/448 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4488 , C23C16/08 , H01L21/28556 , Y10S148/147
摘要： The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.

10. 发明授权

US5242541A Method of producing ultrafine silicon tips for the AFM/STM profilometry 失效
标题翻译：生产AFM / STM型材超导硅胶的方法
公开(公告)号：US5242541A
公开(公告)日：1993-09-07
申请号：US568451
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/16 , G01Q70/10 , Y10S977/878
摘要： A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising:1. providing a silicon substrate and applying a silicon dioxide layer thereto;2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching;3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate;4. thinning the shaft and forming a base by isotropic wet etching; and5. removing the mask by etching.The resulting tip shaft with a rectangular end may be pointed by argon ion milling.In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.
摘要翻译：描述了一种用于生产用于AFM / STM轮廓测量法的超细硅尖端的方法，包括：1.提供硅衬底并向其施加二氧化硅层; 2.通过光刻和湿法或干蚀刻在所述二氧化硅层中产生掩模; 3.通过将在步骤2中产生的掩模图案通过反应离子蚀刻转移到硅衬底中来生产尖端轴; 4.通过各向同性湿法蚀刻使轴变薄并形成基座; 和5.通过蚀刻去除掩模。所产生的具有矩形端部的尖端轴可以通过氩离子铣削来尖。在第二实施例中，在步骤5之前，通过完整的二氧化硅掩模存在各向异性湿法蚀刻步骤，从而产生正好在掩模下面的轴的负轮廓。在该蚀刻步骤之后，通过蚀刻除去掩模。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式