会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Sputtered and anodized capacitors capable of withstanding exposure to
high temperatures
    • 溅射和阳极氧化电容器能承受高温暴露
    • US5872696A
    • 1999-02-16
    • US826980
    • 1997-04-09
    • Michael G. PetersMichael G. LeeSolomon I. BeilinYasuhito Takahashi
    • Michael G. PetersMichael G. LeeSolomon I. BeilinYasuhito Takahashi
    • H01G4/08H01L21/02H01G4/008B05D5/12H01G4/06
    • H01L28/60H01G4/085
    • Novel structures for capacitors which are capable of withstanding heat treatments to at least 400.degree. C. while providing low defect densities and low electrical series resistance in its electrodes are disclosed. In one embodiment of the present invention, a capacitor structure includes a bottom capacitor electrode formed of a first sub-layer of aluminum, a second sub-layer of tantalum nitride, and a third sub-layer of tantalum. The capacitor structure further includes a sputtered dielectric layer of tantalum pentoxide over the tantalum sub-layer of the bottom electrode. The resulting structure is anodized such that the underlying tantalum layer is fully anodized, and preferably such that a portion of the tantalum nitride layer is converted to a tantalum oxy-nitride. The tantalum nitride layer was discovered by the inventors to act as a good high temperature diffusion barrier for the aluminum, preventing the aluminum from migrating into the anodized tantalum pentoxide layer under high temperature processing conditions, where it would chemically reduce the tantalum atoms in the tantalum pentoxide layer and introduce conductive paths of tantalum in the dielectric (tantalum pentoxide) layer. The aluminum layer provides good electrical conductivity for the bottom electrode, and is anodized to fill any pinhole defects in the layers formed above it, thereby increasing manufacturing yields.
    • 公开了一种电容器的新型结构,其能够耐热处理至少400℃,同时在其电极中提供低缺陷密度和低电串联电阻。 在本发明的一个实施例中,电容器结构包括由铝的第一子层,氮化钽的第二子层和钽的第三子层形成的底部电容器电极。 电容器结构还包括在底部电极的钽子层上的五氧化二钽的溅射介电层。 所得到的结构被阳极氧化,使得下面的钽层被完全阳极氧化,并且优选地使得一部分氮化钽层转化为氮氧化钽。 本发明人发现氮化钽层用作铝的良好的高温扩散阻挡层,防止铝在高温加工条件下迁移到阳极氧化的五氧化二钽层中,其中它将化学还原钽中的钽原子 并在介电(五氧化二钽)层中引入钽的导电路径。 铝层为底部电极提供良好的导电性,并被阳极氧化以填充其上形成的层中的任何针孔缺陷,从而提高制造产量。