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1. 发明申请

US20110303969A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110303969A1
公开(公告)日：2011-12-15
申请号：US13052177
申请日：2011-03-21
申请人： Tetsuya KAI , Yoshio Ozawa , Ryota Fujitsuka , Yoshitaka Tsunashima
发明人： Tetsuya KAI , Yoshio Ozawa , Ryota Fujitsuka , Yoshitaka Tsunashima
IPC分类号： H01L29/792 , H01L21/20
CPC分类号： H01L29/66666 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a semiconductor memory device with memory cells each composed of a vertical transistor, comprises a silicon layer formed into a columnar shape on a silicon substrate, a gate insulating film part in which a tunnel insulating film, a charge storage layer, and a block insulating film are formed to surround the sidewall surface of the silicon layer, and a stacked structure part formed to surround the sidewall surface of the gate insulating film part and in which a plurality of interlayer insulating films and a plurality of control gate electrode layers are stacked alternately. The silicon layer, gate insulating film part, and control gate electrode layer constitute the vertical transistor. The charge storage layer has a region lower in trap level than a region facing the control gate electrode layer between the vertical transistors.
摘要翻译：根据一个实施例，具有每个由垂直晶体管组成的存储单元的半导体存储器件包括在硅衬底上形成为柱状的硅层，其中隧道绝缘膜，电荷存储层，并且形成块状绝缘膜以包围硅层的侧壁表面，以及堆叠结构部分，其形成为围绕栅极绝缘膜部分的侧壁表面，并且其中多个层间绝缘膜和多个控制栅电极层交替堆叠。硅层，栅极绝缘膜部分和控制栅极电极层构成垂直晶体管。电荷存储层的陷阱水平低于垂直晶体管之间的面对控制栅极电极层的区域。

2. 发明授权

US08796757B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08796757B2
公开(公告)日：2014-08-05
申请号：US13052177
申请日：2011-03-21
申请人： Tetsuya Kai , Yoshio Ozawa , Ryota Fujitsuka , Yoshitaka Tsunashima
发明人： Tetsuya Kai , Yoshio Ozawa , Ryota Fujitsuka , Yoshitaka Tsunashima
IPC分类号： H01L29/792
CPC分类号： H01L29/66666 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a semiconductor memory device with memory cells each composed of a vertical transistor, comprises a silicon layer formed into a columnar shape on a silicon substrate, a gate insulating film part in which a tunnel insulating film, a charge storage layer, and a block insulating film are formed to surround the sidewall surface of the silicon layer, and a stacked structure part formed to surround the sidewall surface of the gate insulating film part and in which a plurality of interlayer insulating films and a plurality of control gate electrode layers are stacked alternately. The silicon layer, gate insulating film part, and control gate electrode layer constitute the vertical transistor. The charge storage layer has a region lower in trap level than a region facing the control gate electrode layer between the vertical transistors.
摘要翻译：根据一个实施例，具有每个由垂直晶体管组成的存储单元的半导体存储器件包括在硅衬底上形成为柱状的硅层，其中隧道绝缘膜，电荷存储层，并且形成块状绝缘膜以包围硅层的侧壁表面，以及堆叠结构部分，其形成为围绕栅极绝缘膜部分的侧壁表面，并且其中多个层间绝缘膜和多个控制栅电极层交替堆叠。硅层，栅极绝缘膜部分和控制栅极电极层构成垂直晶体管。电荷存储层的陷阱水平低于垂直晶体管之间的面对控制栅极电极层的区域。

3. 发明授权

US08609487B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08609487B2
公开(公告)日：2013-12-17
申请号：US12686005
申请日：2010-01-12
申请人： Katsuaki Natori , Masayuki Tanaka , Akihito Yamamoto , Katsuyuki Sekine , Ryota Fujitsuka , Daisuke Nishida , Yoshio Ozawa
发明人： Katsuaki Natori , Masayuki Tanaka , Akihito Yamamoto , Katsuyuki Sekine , Ryota Fujitsuka , Daisuke Nishida , Yoshio Ozawa
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.
摘要翻译：一种制造半导体器件的方法，包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极其中，形成所述第二绝缘膜包括使用不含氯的源气体形成含硅的绝缘膜，以及在含有硅的绝缘膜上形成含有氧和金属元素的绝缘膜。

4. 发明授权

US08278697B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08278697B2
公开(公告)日：2012-10-02
申请号：US13351965
申请日：2012-01-17
申请人： Masayuki Tanaka , Daisuke Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
发明人： Masayuki Tanaka , Daisuke Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7883
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.

5. 发明授权

US08008152B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08008152B2
公开(公告)日：2011-08-30
申请号：US11727981
申请日：2007-03-29
申请人： Ryota Fujitsuka , Katsuaki Natori , Daisuke Nishida , Masayuki Tanaka , Katsuyuki Sekine , Yoshio Ozawa , Akihito Yamamoto
发明人： Ryota Fujitsuka , Katsuaki Natori , Daisuke Nishida , Masayuki Tanaka , Katsuyuki Sekine , Yoshio Ozawa , Akihito Yamamoto
IPC分类号： H01L21/00
CPC分类号： H01L21/31608 , H01L21/02164 , H01L21/02178 , H01L21/02271 , H01L21/0228 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28273 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L27/115 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.
摘要翻译：一种制造半导体器件的方法，包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极形成第二绝缘膜包括形成含有氧和金属元素的下绝缘膜，在含氧化气体的气氛中对下绝缘膜进行热处理，并且在热处理的下绝缘膜上形成上绝缘膜，使用含有氢和氯中的至少一种。

6. 发明授权

US07972927B2 Method of manufacturing a nonvolatile semiconductor memory device 有权
标题翻译：制造非易失性半导体存储器件的方法
公开(公告)号：US07972927B2
公开(公告)日：2011-07-05
申请号：US12540663
申请日：2009-08-13
申请人： Ryota Fujitsuka , Katsuyuki Sekine , Yoshio Ozawa
发明人： Ryota Fujitsuka , Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L27/11568 , H01L29/66833 , H01L29/792
摘要： According to a method of manufacturing a MONOS nonvolatile semiconductor memory device, a tunnel insulating film, a charge storage layer, a block insulating film containing a metal oxide and a control gate electrode are stacked on a semiconductor substrate. Heat treatment is carried out in an atmosphere containing an oxidizing gas after the tunnel insulating film, the charge storage layer and the block insulating film are stacked on the semiconductor substrate. Thereafter, the control gate electrode is formed on the block insulating film.
摘要翻译：根据制造MONOS非易失性半导体存储器件的方法，在半导体衬底上层叠隧道绝缘膜，电荷存储层，含有金属氧化物的块绝缘膜和控制栅电极。在隧道绝缘膜，电荷存储层和块绝缘膜堆叠在半导体衬底上之后，在含有氧化性气体的气氛中进行热处理。此后，控制栅电极形成在块绝缘膜上。

7. 发明授权

US07927949B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07927949B2
公开(公告)日：2011-04-19
申请号：US12755532
申请日：2010-04-07
申请人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
发明人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/3205 , H01L21/4763
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

8. 发明申请

US20110012190A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012190A1
公开(公告)日：2011-01-20
申请号：US12888140
申请日：2010-09-22
申请人： Masayuki Tanaka , Daisuke Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
发明人： Masayuki Tanaka , Daisuke Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L29/68
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7883
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极，所述第二绝缘膜包括下氮化硅膜，形成在所述下氮化硅膜上的下氧化硅膜，形成在所述下氧化硅膜上并含有金属元素的中间绝缘膜，所述中间绝缘膜具有相对电介质大于7的常数，形成在中间绝缘膜上的上部氧化硅膜和形成在上部氧化硅膜上的上部氮化硅膜。

9. 发明申请

US20090194808A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090194808A1
公开(公告)日：2009-08-06
申请号：US12362019
申请日：2009-01-29
申请人： Ryota FUJITSUKA , Yoshio Ozawa , Katsuaki Natori
发明人： Ryota FUJITSUKA , Yoshio Ozawa , Katsuaki Natori
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , H01L27/112
摘要： A semiconductor device includes an element region having a channel region, and a unit gate structure inducing a channel in the channel region, the unit gate structure including a tunnel insulating film formed on the element region, a charge storage insulating film formed on the tunnel insulating film, a block insulating film formed on the charge storage insulating film, and a control gate electrode formed on the block insulating film, wherein a distance between the element region and the control gate electrode is shorter at a center portion of the unit gate structure than at both ends thereof, as viewed in a section parallel to a channel width direction.
摘要翻译：半导体器件包括具有沟道区域的元件区域和在沟道区域中引起沟道的单元栅极结构，所述单元栅极结构包括形成在元件区域上的隧道绝缘膜，形成在隧道绝缘层上的电荷存储绝缘膜形成在电荷存储绝缘膜上的块绝缘膜和形成在块绝缘膜上的控制栅极电极，其中元件区域和控制栅电极之间的距离在单元栅极结构的中心部分较短在与通道宽度方向平行的部分中看到的两端。

10. 发明申请

US20080149932A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20080149932A1
公开(公告)日：2008-06-26
申请号：US11946606
申请日：2007-11-28
申请人： Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka , Masayuki Tanaka , Kazuaki Nakajima , Yoshio Ozawa , Akihito Yamamoto
发明人： Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka , Masayuki Tanaka , Kazuaki Nakajima , Yoshio Ozawa , Akihito Yamamoto
IPC分类号： H01L27/115
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L29/513 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, and a memory cell array provided on the semiconductor substrate and including a plurality of memory cells arranged on the semiconductor substrate, each of the plurality of the memory cells including a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer, and a control electrode containing metal or metal silicide provided on the charge storage layer via the second insulating film, wherein a corner of a lower part of the control electrode includes semiconductor and fails to contain the metal or the metal silicide in a channel width direction view of the memory cell.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上并且包括布置在半导体衬底上的多个存储单元的存储单元阵列，多个存储单元中的每一个包括设置在半导体衬底上的第一绝缘膜，设置在所述第一绝缘膜上的电荷存储层，设置在所述电荷存储层上的第二绝缘膜，以及经由所述第二绝缘膜设置在所述电荷存储层上的含有金属或金属硅化物的控制电极，的控制电极包括半导体，并且在存储单元的沟道宽度方向视图中不能容纳金属或金属硅化物。

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