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1. 发明申请

US20130240968A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130240968A1
公开(公告)日：2013-09-19
申请号：US13616735
申请日：2012-09-14
申请人： Katsuyuki SEKINE
发明人： Katsuyuki SEKINE
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L21/28273 , H01L27/11521 , H01L29/401 , H01L29/42324 , H01L29/42336 , H01L29/66825 , H01L29/7883
摘要： A semiconductor device includes a multilayered interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface portion of the element isolation insulating film, a second region along a sidewall portion of the charge storage layer, and a third region above an upper surface portion of the charge storage layer. The interelectrode insulating film includes a stack of first silicon oxide film, a silicon nitride film, and a second silicon oxide film. The silicon nitride film is relatively thicker in the third region compared to the first region and compared to at least a portion of the second region.
摘要翻译：半导体器件包括在电荷存储层和控制电极层之间形成的多层电极间绝缘膜。电极间绝缘膜形成在元件隔离绝缘膜的上表面部分上方的第一区域中，沿着电荷存储层的侧壁部分的第二区域和电荷存储层的上表面部分上方的第三区域。电极间绝缘膜包括第一氧化硅膜，氮化硅膜和第二氧化硅膜的堆叠。与第一区域相比，氮化硅膜在第三区域中相对较厚，并与第二区域的至少一部分进行比较。

2. 发明授权

US08450715B2 Nonvolatile metal oxide memory element and nonvolatile memory device 有权
标题翻译：非挥发性金属氧化物存储元件和非易失性存储器件
公开(公告)号：US08450715B2
公开(公告)日：2013-05-28
申请号：US12884000
申请日：2010-09-16
申请人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
发明人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.
摘要翻译：根据一个实施例，非易失性存储器件包括多个非易失性存储元件，每个非易失性存储元件包括电阻变化膜。电阻变化膜能够响应于施加到电阻变化膜的电压或通过电阻变化膜的电流中的至少一个而在具有不同电阻的多个状态之间进行转换来记录信息，并且电阻变化膜包括包含选自Hf，Zr，Ni，Ta，W，Co，Al，Fe，Mn，Cr和Nb中的至少一种元素的氧化物。包含在电阻变化膜中的杂质元素是选自Mg，Ca，Sr，Ba，Sc，Y，La，V，Ta，B，Ga，In，Tl，C，Si中的至少一种元素， Ge，Sn，Pb，N，P，As，Sb，Bi，S，Se和Te，并且杂质元素的氧化物形成的标准吉布斯能量的绝对值大于氧化物形成的标准吉布斯能量的绝对值的氧化物中所含的元素。

3. 发明授权

US08411486B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08411486B2
公开(公告)日：2013-04-02
申请号：US12823467
申请日：2010-06-25
申请人： Katsuyuki Sekine , Ryota Fujitsuka , Yoshio Ozawa
发明人： Katsuyuki Sekine , Ryota Fujitsuka , Yoshio Ozawa
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/005 , G11C11/5685 , G11C13/0007 , G11C13/0064 , G11C2013/0083 , G11C2213/32 , G11C2213/34 , G11C2213/72 , H01L27/101
摘要： According to one embodiment, there is provided a method of manufacturing a nonvolatile memory device. In this method, a first voltage may be applied to a variable resistive element having a resistance value which is electrically rewritable in a high resistance and in a low resistance. In this method, a second voltage may be applied to the variable resistive element in a case where the resistance value of the variable resistive element to which the first voltage has been applied is greater than a resistance value of the low resistance and is not greater than a resistance value of the high resistance. Further, in this method, the applying of the second voltage to the variable resistive element may be repeated until the resistance value of the variable resistive element to which the second voltage has been applied falls within a range of the resistance value of the low resistance.
摘要翻译：根据一个实施例，提供了一种制造非易失性存储器件的方法。在该方法中，可以将第一电压施加到具有电阻可变的电阻值的高电阻和低电阻的可变电阻元件。在该方法中，在施加了第一电压的可变电阻元件的电阻值大于低电阻的电阻值的情况下，可以向可变电阻元件施加第二电压，并且不大于电阻值为高电阻。此外，在该方法中，可以重复向可变电阻元件施加第二电压，直到施加了第二电压的可变电阻元件的电阻值落在低电阻的电阻值的范围内。

4. 发明授权

US08253189B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08253189B2
公开(公告)日：2012-08-28
申请号：US12510577
申请日：2009-07-28
申请人： Katsuyuki Sekine , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
发明人： Katsuyuki Sekine , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
IPC分类号： H01L29/66
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/513 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域的表面上的隧道绝缘膜，形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜，形成在表面上的块状绝缘膜以及形成在所述块绝缘膜的表面上的控制栅电极，其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜，第二绝缘膜形成在第一绝缘膜的表面上的膜，以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜，并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。

5. 发明申请

US20120112263A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120112263A1
公开(公告)日：2012-05-10
申请号：US13351965
申请日：2012-01-17
申请人： Masayuki Tanaka , Daikuse Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
发明人： Masayuki Tanaka , Daikuse Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7883
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极，所述第二绝缘膜包括下氮化硅膜，形成在所述下氮化硅膜上的下氧化硅膜，形成在所述下氧化硅膜上并含有金属元素的中间绝缘膜，所述中间绝缘膜具有相对电介质大于7的常数，形成在中间绝缘膜上的上部氧化硅膜和形成在上部氧化硅膜上的上部氮化硅膜。

6. 发明申请

US20110176351A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110176351A1
公开(公告)日：2011-07-21
申请号：US12824633
申请日：2010-06-28
申请人： Ryota FUJITSUKA , Katsuyuki Sekine , Yoshio Ozawa
发明人： Ryota FUJITSUKA , Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： G11C11/00 , H01L21/8246
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/0092 , G11C2213/71 , H01L27/24 , H01L27/2409 , H01L27/2481 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： According to one embodiment, a nonvolatile memory device includes a memory layer and a control unit. The memory layer includes a first conductive layer, a second conductive layer and a resistance change layer. The resistance change layer is provided between the first and second conductive layers and transits between a high resistance state and a low resistance state by at least one of an applied electric field and an applied current. The control unit is electrically connected to the first and second conductive layers and configured to apply a first signal with a first polarity between the first and second conductive layers prior to applying a second signal with a second polarity different from the first polarity between the first and second conductive layers to cause the resistance change layer to transit from the high resistance state to the low resistance state.
摘要翻译：根据一个实施例，非易失性存储器件包括存储器层和控制单元。存储层包括第一导电层，第二导电层和电阻变化层。电阻变化层设置在第一和第二导电层之间，并通过施加电场和施加电流中的至少一个在高电阻状态和低电阻状态之间转换。控制单元电连接到第一和第二导电层，并且被配置为在施加具有与第一和第二导电层之间的第一极性不同的第二极性的第二信号之前，在第一和第二导电层之间施加具有第一极性的第一信号第二导电层，以使电阻变化层从高电阻状态转移到低电阻状态。

7. 发明申请

US20110068316A1 NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储元件和非易失性存储器件
公开(公告)号：US20110068316A1
公开(公告)日：2011-03-24
申请号：US12884000
申请日：2010-09-16
申请人： Kensuke TAKANO , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
发明人： Kensuke TAKANO , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.
摘要翻译：根据一个实施例，非易失性存储器件包括多个非易失性存储元件，每个非易失性存储元件包括电阻变化膜。电阻变化膜能够响应于施加到电阻变化膜的电压或通过电阻变化膜的电流中的至少一个而在具有不同电阻的多个状态之间进行转换来记录信息，并且电阻变化膜包括包含选自Hf，Zr，Ni，Ta，W，Co，Al，Fe，Mn，Cr和Nb中的至少一种元素的氧化物。包含在电阻变化膜中的杂质元素是选自Mg，Ca，Sr，Ba，Sc，Y，La，V，Ta，B，Ga，In，Tl，C，Si中的至少一种元素， Ge，Sn，Pb，N，P，As，Sb，Bi，S，Se和Te，并且杂质元素的氧化物形成的标准吉布斯能量的绝对值大于氧化物形成的标准吉布斯能量的绝对值的氧化物中所含的元素。

8. 发明授权

US07795106B2 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 有权
标题翻译：在Si晶体的（111）表面上形成的半导体器件及其制造方法
公开(公告)号：US07795106B2
公开(公告)日：2010-09-14
申请号：US11907348
申请日：2007-10-11
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L21/76
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
摘要翻译：半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜含Ar或Kr的薄膜。

9. 发明申请

US20100213534A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100213534A1
公开(公告)日：2010-08-26
申请号：US12709154
申请日：2010-02-19
申请人： Katsuyuki SEKINE , Katsuaki Natori , Tetsuya Kai , Yoshio Ozawa
发明人： Katsuyuki SEKINE , Katsuaki Natori , Tetsuya Kai , Yoshio Ozawa
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L27/11521 , H01L27/11519 , H01L29/40114 , H01L29/42336
摘要： In a nonvolatile semiconductor memory device provided with memory cell transistors, each of the memory cell transistors has a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and element isolation insulating films respectively. The floating gate electrode on the tunnel insulating film is provided with a first floating gate electrode and a second floating gate electrode formed sequentially from the bottom, the second floating gate electrode being narrower in a channel-width direction than the first one. Levels of upper surfaces of the element isolation insulating films and the first floating gate electrode are the same. The inter-electrode insulating film continuously covers the upper and side surfaces of the floating gate electrode and the upper surfaces of the element isolation insulating films, and is higher in a nitrogen concentration in a boundary portion to the floating gate electrode than in boundary portions to the element isolation insulating films.
摘要翻译：在设置有存储单元晶体管的非易失性半导体存储器件中，每个存储单元晶体管分别具有隧道绝缘膜，浮栅电极，电极间绝缘膜和元件隔离绝缘膜。隧道绝缘膜上的浮栅电极设置有从底部顺序形成的第一浮栅电极和第二浮栅电极，第二浮栅电极在沟道宽度方向比第一浮栅电极和第一浮栅电极窄。元件隔离绝缘膜和第一浮栅电极的上表面的电平相同。电极间绝缘膜连续地覆盖浮置栅电极的上表面和元件隔离绝缘膜的上表面，并且在与栅极电极的边界部分的氮浓度相比高于边界部分元件隔离绝缘膜。

10. 发明申请

US20100112791A1 METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US20100112791A1
公开(公告)日：2010-05-06
申请号：US12646563
申请日：2009-12-23
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

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