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    • 1. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08097503B2
    • 2012-01-17
    • US12926357
    • 2010-11-12
    • Isao KamiokaJunichi ShiozawaRyu KatoYoshio Ozawa
    • Isao KamiokaJunichi ShiozawaRyu KatoYoshio Ozawa
    • H01L21/337H01L21/8236
    • H01L29/7881H01L21/76208H01L27/11521H01L29/66825
    • A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
    • 根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽,或者包括第一平面部分,第二平面部分 部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分,并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子,射频波或电子回旋共振提供给侧壁部分 以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分,以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化 隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。
    • 5. 发明授权
    • Method of fabricating a semiconductor device
    • 制造半导体器件的方法
    • US07396721B2
    • 2008-07-08
    • US11130128
    • 2005-05-17
    • Isao KamiokaYoshio Ozawa
    • Isao KamiokaYoshio Ozawa
    • H01L21/336
    • H01L21/28273H01L21/3247H01L27/115H01L27/11521H01L27/11524
    • According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a first conductive layer on the first insulating film; forming a second insulating film on the first conductive layer in a first processing chamber isolated from an outside; performing a modification process on the second insulating film in the first processing chamber, and unloading the semiconductor substrate from the first processing chamber to the outside; annealing the second insulating film in a second processing chamber; and forming a second conductive layer on the second insulating film.
    • 根据本发明,提供一种半导体器件制造方法,包括:在半导体衬底上形成第一绝缘膜; 在所述第一绝缘膜上形成第一导电层; 在与外部隔离的第一处理室中在所述第一导电层上形成第二绝缘膜; 对第一处理室中的第二绝缘膜执行修改处理,并将半导体衬底从第一处理室卸载到外部; 在第二处理室中退火第二绝缘膜; 以及在所述第二绝缘膜上形成第二导电层。
    • 7. 发明申请
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20110065262A1
    • 2011-03-17
    • US12926357
    • 2010-11-12
    • Isao KamiokaJunichi ShiozawaRyu KatoYoshio Ozawa
    • Isao KamiokaJunichi ShiozawaRyu KatoYoshio Ozawa
    • H01L21/326
    • H01L29/7881H01L21/76208H01L27/11521H01L29/66825
    • A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
    • 根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽,或者包括第一平面部分,第二平面部分 部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分,并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子,射频波或电子回旋共振提供给侧壁部分 以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分,以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化 隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。
    • 8. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US07897455B2
    • 2011-03-01
    • US11525118
    • 2006-09-22
    • Yoshio OzawaIsao Kamioka
    • Yoshio OzawaIsao Kamioka
    • H01L29/788
    • H01L27/115H01L21/28273H01L27/11521H01L27/11524H01L29/42324H01L29/66825H01L29/7881
    • A semiconductor device manufacturing method includes forming a first insulating film on a semiconductor substrate containing silicon, the first insulating film having a first dielectric constant and constituting a part of a tunnel insulating film, forming a floating gate electrode film on the first insulating film, the floating gate electrode film being formed of a semiconductor film containing silicon, patterning the floating gate electrode film, the first insulating film, and the semiconductor substrate to form a first structure having a first side surface, exposing the first structure to an atmosphere containing an oxidizing agent, oxidizing that part of the floating gate electrode film which corresponds to a boundary between the first insulating film and the floating gate electrode film using the oxidizing agent, to form a second insulating film having a second dielectric constant smaller than the first dielectric constant and constituting a part of the tunnel insulating film.
    • 半导体器件制造方法包括在包含硅的半导体衬底上形成第一绝缘膜,所述第一绝缘膜具有第一介电常数并构成隧道绝缘膜的一部分,在第一绝缘膜上形成浮栅电极膜, 浮栅电极膜由含硅的半导体膜形成,图案化浮栅电极膜,第一绝缘膜和半导体衬底以形成具有第一侧表面的第一结构,将第一结构暴露于含氧化物 使用所述氧化剂氧化对应于所述第一绝缘膜和所述浮栅电极膜之间的边界的所述浮栅电极膜的所述部分,以形成具有小于所述第一介电常数的第二介电常数的第二绝缘膜,以及 构成隧道绝缘膜的一部分。
    • 10. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07858467B2
    • 2010-12-28
    • US12412962
    • 2009-03-27
    • Isao KamiokaJunichi ShiozawaRyu KatoYoshio Ozawa
    • Isao KamiokaJunichi ShiozawaRyu KatoYoshio Ozawa
    • H01L21/337H01L21/8238
    • H01L29/7881H01L21/76208H01L27/11521H01L29/66825
    • A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
    • 根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽,或者包括第一平面部分,第二平面部分 部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分,并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子,射频波或电子回旋共振提供给侧壁部分 以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分,以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化 隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。