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1. 发明授权

US5127202A External wall of building constructed by panel units 失效
标题翻译：建筑面板外墙外墙
公开(公告)号：US5127202A
公开(公告)日：1992-07-07
申请号：US537113
申请日：1990-06-13
申请人： Teruo Yokota , Akihiko Takeda , Noriaki Okamoto , Hideyuki Yokoya
发明人： Teruo Yokota , Akihiko Takeda , Noriaki Okamoto , Hideyuki Yokoya
IPC分类号： E04B2/90 , E04C2/38
CPC分类号： E04C2/384 , E04B2/90
摘要： An exterior wall of a building, comprises: a plurality of panel units each of which is constructed of: a frame member constructed of a right and a left vertical member together with an upper and a lower lateral member horizontally interposed between the right and the left vertical member; and a plurality of panel members mounted on a front surface of the frame member in such a manner as to be parallelly spaced apart from each other by a predetermined joint space. The plurality of panel units are mounted on a front surface of the building through a plurality of mounting brackets in such a manner as to be parallelly spaced apart from each other by the same space as that of the joint space.
摘要翻译：建筑物的外墙包括：多个面板单元，每个面板单元由以下构成的框架构件：由左右垂直构件构成的框架构件以及水平地插入在右侧和左侧之间的上部和下部横向构件垂直会员以及以预定的关节空间彼此平行间隔地安装在框架构件的前表面上的多个面板构件。多个面板单元通过多个安装支架以与关节空间相同的空间相互间隔开的方式安装在建筑物的前表面上。

2. 发明授权

US5267419A Panel fastener construction 失效
标题翻译：面板紧固件结构
公开(公告)号：US5267419A
公开(公告)日：1993-12-07
申请号：US745336
申请日：1991-08-15
申请人： Teruo Yokota , Hideyuki Yokoya , Noriaki Okamoto , Akihiko Takeda
发明人： Teruo Yokota , Hideyuki Yokoya , Noriaki Okamoto , Akihiko Takeda
IPC分类号： E04B2/88 , E04B2/90
CPC分类号： E04B2/90
摘要： A panel fastener construction is used for fastening a plurality of building panels to a primary structure with a uniform gap interposed between each vertically adjacent panels. The panel fastener construction comprises a plurality pair of upper and lower upward supporting hooks provided on the primary structure with the upper and lower upward supporting hooks vertically spaced from each other, and a pair of upper and lower downward catching hooks provided on the exterior side of each panel for engagement with the upper and lower upward supporting hooks, respectively, of the primary structure. The height of the downward hooks is slightly less than the inter-panel gap.
摘要翻译：面板紧固件结构用于将多个建筑面板紧固到主结构，其中每个垂直相邻板之间插入均匀的间隙。面板紧固件结构包括设置在主结构上的多对上，下向上支撑钩，其中上和下向上支撑钩彼此垂直间隔开，并且一对上下向下抓钩设置在每个面板分别与主结构的上和下向上支撑钩相配合。向下钩的高度略小于面板间间隙。

3. 发明授权

US06620704B2 Method of fabricating low stress semiconductor devices with thermal oxide isolation 失效
标题翻译：制造具有热氧化隔离的低应力半导体器件的方法
公开(公告)号：US06620704B2
公开(公告)日：2003-09-16
申请号：US09893980
申请日：2001-06-29
申请人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
发明人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
IPC分类号： H01L2176
CPC分类号： H01L21/76205 , H01L21/76202 , H01L27/0802
摘要： A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a desired portion. Additionally, a groove may be formed in the semiconductor substrate in the portion in which the silicon oxide film is removed. A part of the silicon oxide film may be etched back around the groove with hydrofluoric acid type at the portion in which the silicon nitrite film is located above. Additionally, an oxidized film may be formed in the groove of the semiconductor substrate and the groove may be oxidized.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括在半导体衬底上形成氧化硅膜。可以在氧化硅膜上形成亚硝酸硅膜。可以在期望的部分去除一部分亚硝酸硅膜和氧化硅膜。此外，可以在除去氧化硅膜的部分中的半导体衬底中形成沟槽。氧化硅膜的一部分可以在硅亚硝酸盐膜位于上方的部分用氢氟酸型蚀刻回到槽周围。此外，可以在半导体衬底的沟槽中形成氧化膜，并且可以使沟槽被氧化。

4. 发明授权

US5757573A Magnetic disk device without slider and having magnetic head mounted directly on magnetic head support 失效
标题翻译：无滑块的磁盘设备，磁头直接安装在磁头支架上
公开(公告)号：US5757573A
公开(公告)日：1998-05-26
申请号：US284172
申请日：1994-08-02
申请人： Mikio Tokuyama , Ryoichi Ichikawa , Noriaki Okamoto
发明人： Mikio Tokuyama , Ryoichi Ichikawa , Noriaki Okamoto
IPC分类号： G11B21/21 , G11B5/10 , G11B5/17 , G11B5/29 , G11B5/48 , G11B5/58 , G11B5/60 , G11B19/02 , G11B21/02
CPC分类号： G11B5/6005 , G11B19/02 , G11B5/10 , G11B5/17 , G11B5/29 , G11B5/4806 , G11B5/4886 , G11B5/58
摘要： A magnetic disk device for reading information from a magnetic disk surface of a magnetic disk and for writing information on the magnetic disk surface. The magnetic disk device includes an arm disposed at a distance from the magnetic disk surface, a magnetic head support including a flexible member cantilevered to the arm, and at least one magnetic head. The flexible member has a first end attached to the arm and a second end extending toward the magnetic disk surface, and the at least one magnetic head is disposed at the second end of the flexible member. The at least one magnetic head includes a core having a gap and a coil wound around the core. The gap is disposed at a surface of the flexible member facing toward the magnetic disk surface.
摘要翻译：一种用于从磁盘的磁盘表面读取信息并用于在磁盘表面上写入信息的磁盘装置。磁盘装置包括设置在离磁盘表面一定距离处的臂，包括悬臂连接到臂的柔性构件的磁头支撑件和至少一个磁头。柔性构件具有附接到臂的第一端和朝向磁盘表面延伸的第二端，并且至少一个磁头设置在柔性构件的第二端。所述至少一个磁头包括具有间隙的磁芯和缠绕在磁芯上的线圈。间隙设置在面向磁盘表面的柔性构件的表面上。

5. 发明授权

US5444302A Semiconductor device including multi-layer conductive thin film of polycrystalline material 失效
标题翻译：半导体器件包括多层导电薄膜的多晶材料
公开(公告)号：US5444302A
公开(公告)日：1995-08-22
申请号：US168506
申请日：1993-12-22
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L23/48 , H01L29/46
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon 6 oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的硅6氧化膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成栅电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

6. 发明授权

US5285343A Magnetic disk with surface protective layer having convex portions and magnetic disk apparatus including such a magnetic disk 失效
标题翻译：具有凸部的表面保护层的磁盘和包括这种磁盘的磁盘装置
公开(公告)号：US5285343A
公开(公告)日：1994-02-08
申请号：US595414
申请日：1990-10-11
申请人： Hideaki Tanaka , Kenichi Gomi , Shoichi Sawahata , Maki Kondo , Masaki Ohura , Norikazu Tsumita , Katuo Uda , Yoshiki Kato , Yoshihiko Miyake , Toyoji Okuwaki , Noriaki Okamoto , Nobuo Nakagawa
发明人： Hideaki Tanaka , Kenichi Gomi , Shoichi Sawahata , Maki Kondo , Masaki Ohura , Norikazu Tsumita , Katuo Uda , Yoshiki Kato , Yoshihiko Miyake , Toyoji Okuwaki , Noriaki Okamoto , Nobuo Nakagawa
IPC分类号： G11B5/60 , G11B5/72 , G11B5/82 , G11B5/84 , G11B23/50 , G11B5/74
CPC分类号： B82Y10/00 , G11B23/505 , G11B5/6005 , G11B5/72 , G11B5/743 , G11B5/82 , G11B5/8408
摘要： There is provided a magnetic disk apparatus including at least one magnetic disk having a magnetic layer and a surface protective layer on a substrate; a magnetic head which faces the magnetic disk in a rotating state with a micro gap and is supported by a slider; rotating means for rotating the magnetic disk; and magnetic head positioning means for moving and positioning the magnetic head to a predetermined position on the magnetic disk, wherein a plurality of protrusions each having a flat surface are formed in at least a region on the surface of the magnetic disk where a contact start/stop operation can be executed, an area ratio of the protrusions per 1 mm.sup.2 lies within a range from 0.1 to 80%, a height of the protrusion of the maximum height among the protrusions lies within a range from 5 to 40 nm, and the magnetic layer is formed on the whole surface on the base plate. According to the above magnetic disk apparatus, the frictional force between the disk and the head is small, and the floating height of the head can be reduced, and good floating stability is obtained, so that excellent recording and reproducing characteristics are obtained.
摘要翻译：提供一种磁盘装置，其包括在基板上具有磁性层和表面保护层的至少一个磁盘; 磁头，其在具有微小间隙的旋转状态下面对磁盘，并由滑块支撑; 用于旋转磁盘的旋转装置; 以及磁头定位装置，用于将磁头移动和定位到磁盘上的预定位置，其中在磁盘表面上的至少一个区域上形成有各自具有平坦表面的多个突起，其中接触开始/ 可以执行停止操作，每1mm 2的突起的面积比在0.1至80％的范围内，突起中的最大高度的突起的高度在5至40nm的范围内，并且磁在基板上的整个表面上形成层。根据上述磁盘装置，盘与头部之间的摩擦力小，可以降低头部的浮动高度，并且获得良好的浮动稳定性，从而获得优异的记录和再现特性。

7. 发明授权

US07292000B2 Angular velocity measuring device and leg-moving robot 失效
标题翻译：角速度测量装置和腿部移动机器人
公开(公告)号：US07292000B2
公开(公告)日：2007-11-06
申请号：US10584049
申请日：2005-07-13
申请人： Kouji Saotome , Noriaki Okamoto , Shinyu Hirayama , Tomohiro Sakogoshi , Yoichi Shimada , Shigeto Akahori , Kengo Hori , Hitoshi Saika
发明人： Kouji Saotome , Noriaki Okamoto , Shinyu Hirayama , Tomohiro Sakogoshi , Yoichi Shimada , Shigeto Akahori , Kengo Hori , Hitoshi Saika
IPC分类号： B25J5/00 , G01C19/00 , G01P9/00
CPC分类号： G01C19/56 , B25J13/088 , G01P9/00
摘要： An angular velocity measuring device (1) includes a first sensor (2) (vibration gyro) and a second sensor (3) (gas rate gyro). The detection output of the first sensor (2) is inputted to a high pass filter (4). Output of the filter (4) is stored and held in time series in a memory (10). Subtraction processing means (11) successively executes processing of subtracting the output of the filter (4) ωv′(t−tsd) before a predetermined time tsd from the output of the filter (4) ωv′(1). The value thus obtained is successively added to the output of the second sensor (3) ωg(t) by addition processing means (12) so as to obtain the measurement value of the angular velocity. Thus, it is possible to provide an angular velocity measuring device capable of giving an angular velocity measurement value having a high response and stability at a reasonable cost.
摘要翻译：角速度测量装置（1）包括第一传感器（2）（振动陀螺仪）和第二传感器（3）（气速陀螺仪）。第一传感器（2）的检测输出被输入到高通滤波器（4）。滤波器（4）的输出被存储并保存在存储器（10）中。减法处理装置（11）从滤波器（4）的输出ωgav'（1）起依次执行从预定时间tsd之前减去滤波器（4）的输出ωgav'（t-tsd）的处理。这样获得的值通过加法处理装置（12）被连续添加到第二传感器（3）的输出端，以获得角速度的测量值。因此，可以提供能够以合理的成本给出具有高响应性和稳定性的角速度测量值的角速度测量装置。

8. 发明申请

US20060252186A1 Method of manufacturing semiconductor device having conductive thin films 失效
标题翻译：制造具有导电薄膜的半导体器件的方法
公开(公告)号：US20060252186A1
公开(公告)日：2006-11-09
申请号：US11480912
申请日：2006-07-06
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/84
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时，例如，栅电极2被构成为多个多晶硅层6的叠层结构。栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

9. 发明授权

US06310384B1 Low stress semiconductor devices with thermal oxide isolation 失效
标题翻译：具有热氧化隔离的低应力半导体器件
公开(公告)号：US06310384B1
公开(公告)日：2001-10-30
申请号：US08838259
申请日：1997-04-17
申请人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
发明人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
IPC分类号： H01L2900
CPC分类号： H01L21/76205 , H01L21/76202 , H01L27/0802
摘要： A width of a circuit device isolation region and a width of a device region formed on a semiconductor substrate are determined in such a manner as to satisfy a condition which prevents the occurrence of dislocation due to thermal oxidation for forming the isolation region. In accordance with the manufacturing scheme, a semiconductor device produced includes a semiconductor substrate, a plurality of circuit regions formed on a device formation region in the semiconductor substrate and having a width of 0.1 to 125 &mgr;m and device isolation regions so formed on the semiconductor substrate as to isolate a plurality of circuit regions from one another and having a width of 0.01 to 2.5 &mgr;m. In such a schemed device, a ratio of the width of the device region to the width of the device isolation region is from 2 to 50. Each device isolation region is a groove formed in the semiconductor substrate by etching a portion, among the pad oxide film formed on the surface of the semiconductor substrate and a nitride film formed on the pad oxide film, existing on the device isolation region, and having a depth of from 0 to 10 nm when measured from the position of the pad oxide film on the semiconductor substrate.
摘要翻译：确定电路器件隔离区域的宽度和形成在半导体衬底上的器件区域的宽度，以满足防止由于形成隔离区域的热氧化引起的位错发生的条件。根据制造方案，制造的半导体器件包括半导体衬底，形成在半导体衬底中的器件形成区域上并具有0.1至125μm的宽度的多个电路区域和形成在半导体衬底上的器件隔离区域以便将多个电路区彼此隔离并且具有0.01至2.5μm的宽度。在这种设计的器件中，器件区域的宽度与器件隔离区域的宽度的比率为2至50.每个器件隔离区域是通过在衬底氧化物中蚀刻一部分而形成在半导体衬底中的沟槽形成在半导体衬底的表面上的膜和形成在衬垫氧化膜上的氮化物膜，存在于器件隔离区上，并且当从半导体上的衬垫氧化物膜的位置测量时具有0至10nm的深度基质。

10. 发明授权

US5335126A Magnetic disk device without slider and having magnetic head mounted directly on magnetic head support including integral gas pressure generating structure 失效
标题翻译：没有滑块的磁盘装置，并且具有直接安装在磁头支架上的磁头，包括一体气压发生结构
公开(公告)号：US5335126A
公开(公告)日：1994-08-02
申请号：US888536
申请日：1992-05-26
申请人： Mikio Tokyuama , Ryoichi Ichikawa , Noriaki Okamoto
发明人： Mikio Tokyuama , Ryoichi Ichikawa , Noriaki Okamoto
IPC分类号： G11B21/21 , G11B5/10 , G11B5/17 , G11B5/29 , G11B5/48 , G11B5/58 , G11B5/60 , G11B19/02
CPC分类号： G11B5/6005 , G11B19/02 , G11B5/10 , G11B5/17 , G11B5/29 , G11B5/4806 , G11B5/4886 , G11B5/58
摘要： A magnetic disk device includes an arm disposed at a distance from a magnetic disk surface, a magnetic head support having a first end associated with the arm and having a second end extended toward the magnetic disk surface, a magnetic head provided on the second end of the magnetic head support, and an actuator for rotating the arm so as to cause the magnetic head to move toward or away from the magnetic disk surface. The magnetic head support has rigidity in a direction parallel to the magnetic disk surface and flexibility in a direction non-parallel to the magnetic disk surface over an area extending from the first end to the second end of the magnetic head support, and includes a gas pressure generating structure integral with a portion of the magnetic head support facing the magnetic disk surface for generating a gas pressure between the magnetic head support and the magnetic disk surface due to relative movement between the magnetic head support and the magnetic disk surface.
摘要翻译：磁盘装置包括设置在距离磁盘表面一定距离处的臂，磁头支架，其具有与臂相关联的第一端，并具有朝向磁盘表面延伸的第二端，设置在磁盘表面的第二端上的磁头磁头支撑件和用于旋转臂的致动器，以使磁头朝向或远离磁盘表面移动。磁头支撑件在平行于磁盘表面的方向上具有刚度，并且在从磁头支撑件的第一端延伸到第二端的区域上在与磁盘表面不平行的方向上具有柔性，并且包括气体压力产生结构与面对磁盘表面的磁头支撑件的一部分成一体，用于由于磁头支撑件和磁盘表面之间的相对运动而在磁头支撑件和磁盘表面之间产生气体压力。

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