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1. 发明授权

US06468845B1 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor 失效
标题翻译：具有导电薄膜的半导体装置及其制造装置
公开(公告)号：US06468845B1
公开(公告)日：2002-10-22
申请号：US09536642
申请日：2000-03-28
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L2184
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

2. 发明授权

US5444302A Semiconductor device including multi-layer conductive thin film of polycrystalline material 失效
标题翻译：半导体器件包括多层导电薄膜的多晶材料
公开(公告)号：US5444302A
公开(公告)日：1995-08-22
申请号：US168506
申请日：1993-12-22
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L23/48 , H01L29/46
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon 6 oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的硅6氧化膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成栅电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

3. 发明授权

US07442593B2 Method of manufacturing semiconductor device having conductive thin films 失效
标题翻译：制造具有导电薄膜的半导体器件的方法
公开(公告)号：US07442593B2
公开(公告)日：2008-10-28
申请号：US11480912
申请日：2006-07-06
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时，例如，栅电极2被构成为多个多晶硅层6的叠层结构。栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

4. 发明授权

US07091520B2 Method of manufacturing semiconductor device having conductive thin films 失效
标题翻译：制造具有导电薄膜的半导体器件的方法
公开(公告)号：US07091520B2
公开(公告)日：2006-08-15
申请号：US10265105
申请日：2002-10-07
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L29/10
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时，例如，栅电极2被构成为多个多晶硅层6的叠层结构。栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

5. 发明授权

US06346731B1 Semiconductor apparatus having conductive thin films 有权
标题翻译：具有导电薄膜的半导体装置
公开(公告)号：US06346731B1
公开(公告)日：2002-02-12
申请号：US09499898
申请日：2000-02-08
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H02L2976
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

6. 发明授权

US6118140A Semiconductor apparatus having conductive thin films 失效
标题翻译：具有导电薄膜的半导体装置
公开(公告)号：US6118140A
公开(公告)日：2000-09-12
申请号：US749324
申请日：1996-11-14
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L29/04 , H01L31/036
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and of crystallizing (recrystallizing) this amorphous material. Depositing of the amorphous layers is carried out a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and crystallizing the amorphous material are repeated, whereby a laminated structure of polycrystalline layers having a necessary film thickness is obtained. It is possible to prevent deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在通过氧化硅膜在半导体衬底上形成氧化硅膜上的电极时，例如，栅电极2被构造成多个多晶硅层的叠层结构。栅电极的部分通过制造具有沉积非晶层并使（非晶态）结晶（再结晶））的方法的薄膜的制造方法形成。非晶层的沉积进行多次，使得一次沉积的非晶层的厚度不大于根据失败事件确定的临界应力值规定的厚度，非晶材料在沉积每个非晶层的每个工艺完成后结晶，并且重复沉积非晶层并使无定形材料结晶的过程，从而获得具有所需膜厚度的多晶层的层叠结构。可以防止半导体器件的电特性的劣化和层之间的剥离等缺陷的发生，层中的裂纹等的发生，并且可以获得小晶粒尺寸的多晶层通过层压多晶材料制成所需的膜厚度。

7. 发明授权

US6043142A Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor 失效
公开(公告)号：US6043142A
公开(公告)日：2000-03-28
申请号：US985179
申请日：1997-12-04
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

8. 发明授权

US5683515A Apparatus for manufacturing a semiconductor device having conductive then films 失效
标题翻译：用于制造具有导电膜的半导体器件的装置
公开(公告)号：US5683515A
公开(公告)日：1997-11-04
申请号：US534118
申请日：1995-09-26
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , C23C16/00
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

9. 发明申请

US20060252186A1 Method of manufacturing semiconductor device having conductive thin films 失效
标题翻译：制造具有导电薄膜的半导体器件的方法
公开(公告)号：US20060252186A1
公开(公告)日：2006-11-09
申请号：US11480912
申请日：2006-07-06
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/84
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时，例如，栅电极2被构成为多个多晶硅层6的叠层结构。栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

10. 发明授权

US06379998B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06379998B1
公开(公告)日：2002-04-30
申请号：US08007061
申请日：1993-01-21
申请人： Hiroyuki Ohta , Hideo Miura , Mitsuo Usami , Masatsugu Kametani , Munetoshi Zen , Noriaki Okamoto
发明人： Hiroyuki Ohta , Hideo Miura , Mitsuo Usami , Masatsugu Kametani , Munetoshi Zen , Noriaki Okamoto
IPC分类号： H01L2144
CPC分类号： G06F9/3879 , G06F9/3877 , G06F15/167 , H01L24/24 , H01L24/82 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L29/0657 , H01L2223/54426 , H01L2224/24137 , H01L2224/24225 , H01L2224/24227 , H01L2224/73267 , H01L2224/95136 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/10157 , H01L2924/10158 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/351 , H01L2924/00
摘要： A process of contacting sides of a plurality of chips having semiconductor elements formed in a substrate surface, directly to each other on the same {111} crystal plane.
摘要翻译：使形成在衬底表面中的具有半导体元件的多个芯片的侧面接触在相同的{111}晶面上彼此直接接触的工艺。

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