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    • 6. 发明授权
    • Regrown notch laser
    • 雷射切口激光
    • US06385224B1
    • 2002-05-07
    • US09277908
    • 1999-03-29
    • Ching-Long JiangRandall Brian WilsonMark Rafael Soler
    • Ching-Long JiangRandall Brian WilsonMark Rafael Soler
    • H01S522
    • H01S5/2277H01S5/02252H01S5/02284
    • An edge emitting laser comprising a substrate with or without a buffer layer having a central mesa disposed thereon, said central mesa having a bottom surface, a top surface and side surfaces and said mesa having an active layer disposed on said substrate with or without a buffer layer, a cladding layer disposed on said active layer, and a quaternary layer disposed on said cladding layer; first and second blocking layers disposed along said sides of said mesa; and at least one alignment fiducial disposed along an outer region of the laser, said alignment fiducial comprising at least a first surface and a second surface, said first surface being a certain distance from said active layer in the y-direction and said second surface being a certain distance from said active layer in the x-direction, said first surface comprising at least a portion of the top of said quaternary layer, said second surface comprising at least a portion of a side of at least one of said quaternary, cladding, or active layers.
    • 一种边缘发射激光器,包括具有或不具有设置在其上的中央台面的缓冲层的衬底,所述中央台面具有底表面,顶表面和侧表面,并且所述台面具有设置在具有或不具有缓冲器的所述衬底上的有源层 层,设置在所述有源层上的覆层,以及设置在所述包覆层上的四元层; 沿着所述台面的所述侧面设置的第一和第二阻挡层; 以及沿着所述激光器的外部区域设置的至少一个对准基准,所述对准基准包括至少第一表面和第二表面,所述第一表面与所述有源层在y方向上有一定距离,所述第二表面是 与所述有源层在x方向上一定距离,所述第一表面包括所述四级层的顶部的至少一部分,所述第二表面包括所述四级,包层中的至少一种的至少一部分, 或活动层。
    • 8. 发明授权
    • Method of fabricating semiconductor light emitting devices
    • 制造半导体发光器件的方法
    • US5629232A
    • 1997-05-13
    • US338991
    • 1994-11-14
    • Ching-Long Jiang
    • Ching-Long Jiang
    • H01L33/00H01L33/64H01L21/20
    • H01L33/641H01L33/0025H01L33/0045
    • Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Furthermore, a light absorbing layer is disposed on one side of an unetched portion of the semi-insulating material and an active layer disposed on opposite side. Also, the interface of the semi-insulating material and the active and absorbing layers are at prescribed angles that reduce back reflections to the absorbing and active layers. This arrangement reduces pumping in the absorbing region and thus reduces the lasing effect, allowing for a stable LED. The angle at the interface is determined by having the structure at a predetermined crystallographic direction and having the semi-insulating mesa etched to reveal a predetermined crystalline plane. Finally, in one embodiment of the invention, a channel is etched and filled with thermally conductive material to dissipate heat. This channel, in addition to the heat dissipation effected by the semi-insulating material enables a near linear light output versus current input characteristic for the device.
    • 发光器件需要更高的开关速度来实现更大的调制带宽。 通过减少pn结电容以及使用半绝缘阻挡层和导电衬底来减少与常规半导体异质结器件相关的本征电容的问题。 此外,在半绝缘材料的未蚀刻部分的一侧和设置在相对侧的有源层上设置光吸收层。 此外,半绝缘材料和主动和吸收层的界面处于规定的角度,减小了对吸收层和活性层的反射。 这种布置减少了吸收区域中的泵送,从而降低了激光效应,从而允许稳定的LED。 界面处的角度通过使结构处于预定的晶体方向并且具有半绝缘台面蚀刻以露出预定的晶面来确定。 最后,在本发明的一个实施例中,蚀刻通道并填充导热材料以散热。 除了由半绝缘材料实现的散热之外,该通道能够实现近似线性的光输出与器件的电流输入特性。
    • 10. 发明申请
    • High Power Diode Lasers
    • 大功率二极管激光器
    • US20060215719A1
    • 2006-09-28
    • US11277609
    • 2006-03-27
    • Greg CharacheChing-Long JiangRaymond Menna
    • Greg CharacheChing-Long JiangRaymond Menna
    • H01S5/00
    • H01S5/0425H01S5/0014H01S5/0202H01S5/028H01S5/0282H01S5/1014H01S5/16H01S5/22H01S5/2214H01S5/2231H01S2301/18
    • The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and an active layer between the first cladding layer and the second cladding layer and extending the distance between a first facet and a second facet of the diode laser. The diode laser includes a cap layer located near the second cladding layer, a ridge formed in the cap layer and the second cladding layer, and a contact layer applied at least at the ridge for injecting current into the active layer. The contact layer contacts the cap layer in a contact region having a length that is less than the distance between the first facet and the second facet such that the cap layer includes an unpumped facet region. Methods to make the new lasers are also described.
    • 本发明涉及脊波导半导体二极管激光器,其包括基板,靠近基板的第一包覆层,靠近第一包层的第二包层,以及第一包层和第二包层之间的有源层, 在二极管激光器的第一面和第二面之间。 二极管激光器包括位于第二包覆层附近的盖层,形成在盖层和第二覆层中的脊,以及至少在脊部施加的用于将电流注入到有源层中的接触层。 接触层在具有小于第一面和第二面之间的距离的接触区域的接触区域中接触盖层,使得盖层包括未突出的小面区域。 还描述了制造新型激光器的方法。