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1. 发明授权

US07687291B2 Laser facet passivation 失效
标题翻译：激光刻面钝化
公开(公告)号：US07687291B2
公开(公告)日：2010-03-30
申请号：US11277602
申请日：2006-03-27
申请人： Greg Charache , John Hostetler , Ching-Long Jiang , Raymond J. Menna , Radosveta Radionova , Robert W. Roff , Holger Schlüter
发明人： Greg Charache , John Hostetler , Ching-Long Jiang , Raymond J. Menna , Radosveta Radionova , Robert W. Roff , Holger Schlüter
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/1064 , H01S5/16 , H01S5/3211 , H01S5/34313 , H01S5/4031
摘要： Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.
摘要翻译：制备二极管激光器的前面和后面的方法包括控制第一室内的气氛，使得氧含量和水蒸气含量被控制在预定水平内，并将二极管激光器从受控气氛中的晶片第一室以形成在二极管激光器的正面和背面上憎恨预定厚度的自然氧化物层。在切割之后，二极管激光器在受控气氛中从第一室输送到第二室，部分去除二极管激光器的前面和后面上的自然氧化物层，在正面和背面形成无定形表面层二极管激光器的小面以及二极管激光器的前面和后面被钝化。

2. 发明申请

US20060216842A1 Laser Facet Passivation 失效
标题翻译：激光面钝化
公开(公告)号：US20060216842A1
公开(公告)日：2006-09-28
申请号：US11277602
申请日：2006-03-27
申请人： Greg Charache , John Hostetler , Ching-Long Jiang , Raymond Menna , Radosveta Radionova , Robert Roff , Holger Schulter
发明人： Greg Charache , John Hostetler , Ching-Long Jiang , Raymond Menna , Radosveta Radionova , Robert Roff , Holger Schulter
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/1064 , H01S5/16 , H01S5/3211 , H01S5/34313 , H01S5/4031
摘要： Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.
摘要翻译：制备二极管激光器的前面和后面的方法包括控制第一室内的气氛，使得氧含量和水蒸气含量被控制在预定水平内，并将二极管激光器从受控气氛中的晶片第一室以形成在二极管激光器的正面和背面上憎恨预定厚度的自然氧化物层。在切割之后，二极管激光器在受控气氛中从第一室输送到第二室，部分去除二极管激光器的前面和后面上的自然氧化物层，在正面和背面形成无定形表面层二极管激光器的小面以及二极管激光器的前面和后面被钝化。

3. 发明申请

US20060215719A1 High Power Diode Lasers 审中-公开
标题翻译：大功率二极管激光器
公开(公告)号：US20060215719A1
公开(公告)日：2006-09-28
申请号：US11277609
申请日：2006-03-27
申请人： Greg Charache , Ching-Long Jiang , Raymond Menna
发明人： Greg Charache , Ching-Long Jiang , Raymond Menna
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/1014 , H01S5/16 , H01S5/22 , H01S5/2214 , H01S5/2231 , H01S2301/18
摘要： The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and an active layer between the first cladding layer and the second cladding layer and extending the distance between a first facet and a second facet of the diode laser. The diode laser includes a cap layer located near the second cladding layer, a ridge formed in the cap layer and the second cladding layer, and a contact layer applied at least at the ridge for injecting current into the active layer. The contact layer contacts the cap layer in a contact region having a length that is less than the distance between the first facet and the second facet such that the cap layer includes an unpumped facet region. Methods to make the new lasers are also described.
摘要翻译：本发明涉及脊波导半导体二极管激光器，其包括基板，靠近基板的第一包覆层，靠近第一包层的第二包层，以及第一包层和第二包层之间的有源层，在二极管激光器的第一面和第二面之间。二极管激光器包括位于第二包覆层附近的盖层，形成在盖层和第二覆层中的脊，以及至少在脊部施加的用于将电流注入到有源层中的接触层。接触层在具有小于第一面和第二面之间的距离的接触区域的接触区域中接触盖层，使得盖层包括未突出的小面区域。还描述了制造新型激光器的方法。

4. 发明授权

US07889776B2 High-power semiconductor laser 有权
标题翻译：大功率半导体激光器
公开(公告)号：US07889776B2
公开(公告)日：2011-02-15
申请号：US10597300
申请日：2005-01-21
申请人： Greg Charache , John Charles Connolly , Holger Schlüter , Claus Schnitzler
发明人： Greg Charache , John Charles Connolly , Holger Schlüter , Claus Schnitzler
IPC分类号： H01S3/08
CPC分类号： H01S5/141
摘要： A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.
摘要翻译：光源包括半导体二极管激光器和具有反射器内的折射率变化的三维图案的反射器。反射器与半导体二极管激光器光学通信并与二极管激光器的输出光束对准，使得输出光束中的一部分光被反射器反射回激光器。

5. 发明申请

US20080253421A1 High-Power Semiconductor Laser 有权
标题翻译：大功率半导体激光器
公开(公告)号：US20080253421A1
公开(公告)日：2008-10-16
申请号：US10597300
申请日：2005-01-21
申请人： Greg Charache , John Charles Connolly , Holger Schluter , Claus Schnitzler
发明人： Greg Charache , John Charles Connolly , Holger Schluter , Claus Schnitzler
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/141
摘要： A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.
摘要翻译：光源包括半导体激光二极管和相对于半导体二极管激光器光通信且与二极管激光器的输出光束对准的窄光谱和空间带宽反射器，使得输出光束中的一部分光被反射回到激光。

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