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    • 1. 发明授权
    • Manufacturing methods of asymmetric bumps and pixel structure
    • 不对称凸块和像素结构的制造方法
    • US08007987B2
    • 2011-08-30
    • US12339076
    • 2008-12-19
    • Te-Yu ChenChin-Lung YehYu-Fang Wang
    • Te-Yu ChenChin-Lung YehYu-Fang Wang
    • G03F7/20
    • G03F1/50
    • A manufacturing method of asymmetric bumps is provided. First, a substrate is provided. A film layer is then formed on the substrate. Next, a complex photomask including at least one transparent region, a number of opaque regions, and a number of semi-transparent regions is provided. Each of the semi-transparent regions is disposed between two adjacent opaque regions, and at least one light-shielding pattern is randomly disposed in each of the semi-transparent regions. The film layer is then patterned with use of the complex photomask, and multiple asymmetric bumps are formed on the substrate. By using the complex photomask, manufacturing steps of the asymmetric bumps can be reduced. Besides, a manufacturing method of a pixel structure having the above-mentioned asymmetric bumps is also provided.
    • 提供了一种不对称凸块的制造方法。 首先,提供基板。 然后在基板上形成膜层。 接下来,提供包括至少一个透明区域,多个不透明区域和多个半透明区域的复合光掩模。 每个半透明区域设置在两个相邻的不透明区域之间,并且至少一个遮光图案被随机地布置在每个半透明区域中。 然后使用复合光掩模对膜层进行构图,并且在衬底上形成多个不对称凸起。 通过使用复合光掩模,可以减少不对称凸块的制造步骤。 此外,还提供了具有上述不对称凸块的像素结构的制造方法。
    • 4. 发明申请
    • MANUFACTURING METHODS OF ASYMMETRIC BUMPS AND PIXEL STRUCTURE
    • 不对称的波峰和像素结构的制造方法
    • US20100104956A1
    • 2010-04-29
    • US12339076
    • 2008-12-19
    • Te-Yu ChenChin-Lung YehYu-Fang Wang
    • Te-Yu ChenChin-Lung YehYu-Fang Wang
    • G03F1/00
    • G03F1/50
    • A manufacturing method of asymmetric bumps is provided. First, a substrate is provided. A film layer is then formed on the substrate. Next, a complex photomask including at least one transparent region, a number of opaque regions, and a number of semi-transparent regions is provided. Each of the semi-transparent regions is disposed between two adjacent opaque regions, and at least one light-shielding pattern is randomly disposed in each of the semi-transparent regions. The film layer is then patterned with use of the complex photomask, and multiple asymmetric bumps are formed on the substrate. By using the complex photomask, manufacturing steps of the asymmetric bumps can be reduced. Besides, a manufacturing method of a pixel structure having the above-mentioned asymmetric bumps is also provided.
    • 提供了一种不对称凸块的制造方法。 首先,提供基板。 然后在基板上形成膜层。 接下来,提供包括至少一个透明区域,多个不透明区域和多个半透明区域的复合光掩模。 每个半透明区域设置在两个相邻的不透明区域之间,并且至少一个遮光图案被随机地布置在每个半透明区域中。 然后使用复合光掩模对膜层进行构图,并且在衬底上形成多个不对称凸起。 通过使用复合光掩模,可以减少不对称凸块的制造步骤。 此外,还提供了具有上述不对称凸块的像素结构的制造方法。
    • 5. 发明申请
    • PERIPHERAL CIRCUIT
    • 外围电路
    • US20090207369A1
    • 2009-08-20
    • US12234700
    • 2008-09-21
    • Heng-Chang LinYu-Fang WangMing-Kang HuangChih-Kun Lin
    • Heng-Chang LinYu-Fang WangMing-Kang HuangChih-Kun Lin
    • G02F1/1345
    • G02F1/13452G02F2001/136254
    • A peripheral circuit disposed on a substrate having an active device array is provided. The peripheral circuit includes first test pads, second test pads, first lines, and second lines. The first and the second lines are electrically connected to the active device array. Each first test pad includes a first conductive layer and a second conductive layer electrically connected to the first conductive layer. The first conductive layer electrically connects at least two of the adjacent first lines. The second test pads are interposed between the first test pads and the active device array. Each second test pad includes third conductive layers and a fourth conductive layer electrically connected to the third conductive layers. The first lines pass through the third conductive layers and are insulated from the fourth conductive layer. Each third conductive layer is electrically connected to one of the adjacent second lines respectively.
    • 设置在具有有源器件阵列的衬底上的外围电路。 外围电路包括第一测试焊盘,第二测试焊盘,第一线和第二线。 第一和第二线电连接到有源器件阵列。 每个第一测试焊盘包括电连接到第一导电层的第一导电层和第二导电层。 第一导电层电连接相邻第一线中的至少两个。 第二测试焊盘插入在第一测试焊盘和有源器件阵列之间。 每个第二测试焊盘包括第三导电层和与第三导电层电连接的第四导电层。 第一线穿过第三导电层并与第四导电层绝缘。 每个第三导电层分别电连接到相邻的第二线之一。
    • 9. 发明授权
    • Method of manufacturing thin film transistor
    • 制造薄膜晶体管的方法
    • US07816194B2
    • 2010-10-19
    • US12544231
    • 2009-08-20
    • Ya-Ju LuJun-Yao HuangMing-Chu ChenYu-Fang WangChun-Jen Ma
    • Ya-Ju LuJun-Yao HuangMing-Chu ChenYu-Fang WangChun-Jen Ma
    • H01L21/84
    • H01L29/66765H01L27/1255H01L27/1288
    • A method of manufacturing thin film transistor is provided, in which the method of manufacturing includes a new etching process of island semiconductor. The new etching process of island semiconductor is controlled by a flow rate of etching gas and a regulation of etching power. When etching the island semiconductor, a part of gate insulation layer exposed out of the island semiconductor is etched at the same time. Consequently, the thickness of gate insulation layer over the storage capacitance electrode is reduced, the distance between the pixel electrode and the storage capacitance electrode is decreased, and the storage capacitance of pixel is increased. Finally, the width of storage capacitance electrode is reduced appropriately and the aperture ratio of product is increased.
    • 提供一种制造薄膜晶体管的方法,其中制造方法包括岛状半导体的新的蚀刻工艺。 岛状半导体的新的蚀刻工艺由蚀刻气体的流量和蚀刻功率的调节来控制。 当蚀刻岛状半导体时,同时蚀刻露出岛状半导体的栅极绝缘层的一部分。 因此,存储电容电极上的栅极绝缘层的厚度减小,像素电极和辅助电容电极之间的距离减小,并且像素的存储电容增加。 最后,适当降低了存储电容电极的宽度,增加了产品的开口率。
    • 10. 发明授权
    • Peripheral circuit
    • 外设电路
    • US07755713B2
    • 2010-07-13
    • US12234700
    • 2008-09-21
    • Heng-Chang LinYu-Fang WangMing-Kang HuangChih-Kun Lin
    • Heng-Chang LinYu-Fang WangMing-Kang HuangChih-Kun Lin
    • G02F1/1333G02F1/1345G01R31/00
    • G02F1/13452G02F2001/136254
    • A peripheral circuit disposed on a substrate having an active device array is provided. The peripheral circuit includes first test pads, second test pads, first lines, and second lines. The first and the second lines are electrically connected to the active device array. Each first test pad includes a first conductive layer and a second conductive layer electrically connected to the first conductive layer. The first conductive layer electrically connects at least two of the adjacent first lines. The second test pads are interposed between the first test pads and the active device array. Each second test pad includes third conductive layers and a fourth conductive layer electrically connected to the third conductive layers. The first lines pass through the third conductive layers and are insulated from the fourth conductive layer. Each third conductive layer is electrically connected to one of the adjacent second lines respectively.
    • 设置在具有有源器件阵列的衬底上的外围电路。 外围电路包括第一测试焊盘,第二测试焊盘,第一线和第二线。 第一和第二线电连接到有源器件阵列。 每个第一测试焊盘包括电连接到第一导电层的第一导电层和第二导电层。 第一导电层电连接相邻第一线中的至少两个。 第二测试焊盘插入在第一测试焊盘和有源器件阵列之间。 每个第二测试焊盘包括第三导电层和与第三导电层电连接的第四导电层。 第一线穿过第三导电层并与第四导电层绝缘。 每个第三导电层分别电连接到相邻的第二线之一。