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1. 发明授权

US07791080B2 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US07791080B2
公开(公告)日：2010-09-07
申请号：US12251430
申请日：2008-10-14
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L29/04
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在所述晶体管区域中的所述绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

2. 发明申请

US20060033864A1 Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate 有权
标题翻译：利用双层光致抗蚀剂在控制电路基板上形成黑矩阵和间隔物的方法
公开(公告)号：US20060033864A1
公开(公告)日：2006-02-16
申请号：US11257240
申请日：2005-10-24
申请人： Chih-Chieh Lan , Hung-Yi Hung , Yu-Fang Wang
发明人： Chih-Chieh Lan , Hung-Yi Hung , Yu-Fang Wang
IPC分类号： G02F1/1333
CPC分类号： G02F1/13394 , G02F1/136209
摘要： A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist includes a layer of black resin and a layer of transparent photoresist. The black resin, having an optical density greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.
摘要翻译：提供了一种利用双层光致抗蚀剂在控制电路基板上形成黑矩阵和间隔物的方法。双层光致抗蚀剂包括黑色树脂层和透明光致抗蚀剂层。光密度大于3的黑色树脂主要用于实现黑色矩阵的效果。透明光致抗蚀剂主要用于满足两个透明基板之间所需的单元间隙。

3. 发明申请

US20050112790A1 Method of manufacturing liquid crystal display 有权
标题翻译：制造液晶显示器的方法
公开(公告)号：US20050112790A1
公开(公告)日：2005-05-26
申请号：US10868908
申请日：2004-06-15
申请人： Chih-Chieh Lan , Hung-Yi Hung
发明人： Chih-Chieh Lan , Hung-Yi Hung
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L21/00 , G02F1/136 , H01L21/76
CPC分类号： H01L27/1288 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/136236 , H01L27/1214
摘要： On a substrate, the pattern of the first conductive layer is defined, that is, a gate line combination including gate pads, scanning lines and gate electrodes. A gate insulating layer, a semiconductor layer, a doped semiconductor layer and a second conductive layer are deposited on the substrate and the above-mentioned gate line combination in sequence. A photoresist layer is overlaid on the second conductive layer. The photoresist layer within the aperture areas is fully exposed. Using a half-tone mask or a slit pattern to make parts of the photoresist layer lying on the gate pads and the gate electrodes are not exposed to its full depth. As a result, the photoresist pattern formed varies in thickness. After being processed with drying etching and wet etching for several times, all the layers previously deposited within the aperture areas can be totally etched and removed. However, as regards the layers deposited on the gate pads and the gate electrodes, etching only takes place in those layers above the semiconductor layer. Then, an organic protection layer is laid on the substrate and the above-mentioned structure, and the holes, which are to function as the passageways for the transparent conductive layer to contact the metallic layer, are defined on the organic protection layer. Then, the gate pads are exposed out of holes above them, using dry etching again. Lastly, the pattern of the transparent conductive layer is defined on the organic protection layer and in the plurality of holes.
摘要翻译：在基板上，限定第一导电层的图案，即包括栅极焊盘，扫描线和栅电极的栅极线组合。栅极绝缘层，半导体层，掺杂半导体层和第二导电层依次沉积在衬底和上述栅线组合上。光致抗蚀剂层覆盖在第二导电层上。开口区域内的光致抗蚀剂层被完全暴露。使用半色调掩模或狭缝图案使得位于栅极焊盘和栅极电极上的光致抗蚀剂层的部分未暴露于其全部深度。结果，形成的光致抗蚀剂图案的厚度变化。在用干蚀刻和湿法蚀刻处理数次之后，预先沉积在孔径区域内的所有层可被完全蚀刻和去除。然而，关于沉积在栅极焊盘和栅电极上的层，仅在半导体层上方的那些层中进行蚀刻。然后，在有机保护层上限定有机保护层和上述结构，并且用作透明导电层与金属层接触的通道的孔。然后，使用干蚀刻再次将栅焊盘从其上方的孔中露出。最后，透明导电层的图案限定在有机保护层和多个孔中。

4. 发明授权

US07746443B2 Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate 有权
标题翻译：利用双层光致抗蚀剂在控制电路基板上形成黑矩阵和间隔物的方法
公开(公告)号：US07746443B2
公开(公告)日：2010-06-29
申请号：US11257240
申请日：2005-10-24
申请人： Chih-Chieh Lan , Hung-Yi Hung , Yu-Fang Wang
发明人： Chih-Chieh Lan , Hung-Yi Hung , Yu-Fang Wang
IPC分类号： G02F1/13 , G02F1/136 , G02F1/1335 , G02F1/1339
CPC分类号： G02F1/13394 , G02F1/136209
摘要： A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist includes a layer of black resin and a layer of transparent photoresist. The black resin, having an optical density greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.
摘要翻译：提供了一种利用双层光致抗蚀剂在控制电路基板上形成黑矩阵和间隔物的方法。双层光致抗蚀剂包括黑色树脂层和透明光致抗蚀剂层。光密度大于3的黑色树脂主要用于实现黑色矩阵的效果。透明光致抗蚀剂主要用于满足两个透明基板之间所需的单元间隙。

5. 发明授权

US07633091B2 Structure for an image TFT array for an indirect X-ray sensor 有权
标题翻译：用于间接X射线传感器的图像TFT阵列的结构
公开(公告)号：US07633091B2
公开(公告)日：2009-12-15
申请号：US12406125
申请日：2009-03-18
申请人： Chih-Chieh Lan
发明人： Chih-Chieh Lan
IPC分类号： H01L29/04 , H01L27/01
CPC分类号： H01L27/14603 , H01L27/124 , H01L27/14663 , H01L27/14692
摘要： In the image TFT array structure, at least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer. The lower electrode and the upper electrode of the storage capacitor have an approximately same large area.
摘要翻译：在图像TFT阵列结构中，通过蚀刻第一导电层同时限定至少一个第一线，下电极，焊盘电极，公共电极和与第一线相连的第一电极。通过蚀刻施加到覆盖基板的第二导电层同时限定与第一线相交的至少一条第二线，对应于下电极的上电极，与第二线连接的第二电极和与上电极连接的第三电极并且在第一导电层之上。存储电容器的下电极和上电极具有大致相同的大面积。

6. 发明申请

US20090184320A1 Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof 有权
标题翻译：制造用于间接X射线传感器的图像TFT阵列的方法及其结构
公开(公告)号：US20090184320A1
公开(公告)日：2009-07-23
申请号：US12406125
申请日：2009-03-18
申请人： Chih-Chieh Lan
发明人： Chih-Chieh Lan
IPC分类号： H01L29/04
CPC分类号： H01L27/14603 , H01L27/124 , H01L27/14663 , H01L27/14692
摘要： In the image TFT array structure, at least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer. The lower electrode and the upper electrode of the storage capacitor have an approximately same large area.
摘要翻译：在图像TFT阵列结构中，通过蚀刻第一导电层同时限定至少一个第一线，下电极，焊盘电极，公共电极和与第一线相连的第一电极。通过蚀刻施加到覆盖基板的第二导电层同时限定与第一线相交的至少一条第二线，对应于下电极的上电极，与第二线连接的第二电极和与上电极连接的第三电极并且在第一导电层之上。存储电容器的下电极和上电极具有大致相同的大面积。

7. 发明授权

US07524711B2 Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof 有权
标题翻译：制造用于间接X射线传感器的图像TFT阵列的方法及其结构
公开(公告)号：US07524711B2
公开(公告)日：2009-04-28
申请号：US11163476
申请日：2005-10-20
申请人： Chih-Chieh Lan
发明人： Chih-Chieh Lan
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/14603 , H01L27/124 , H01L27/14663 , H01L27/14692
摘要： The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer.
摘要翻译：本发明公开了一种制造图像TFT阵列的方法及其结构。提供基板。通过蚀刻第一导电层同时限定至少一个第一线，下电极，焊盘电极，公共电极和与第一线连接的第一电极。通过蚀刻施加到覆盖基板的第二导电层同时限定与第一线相交的至少一条第二线，对应于下电极的上电极，与第二线连接的第二电极和与上电极连接的第三电极并且在第一导电层之上。

8. 发明申请

US20090032892A1 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US20090032892A1
公开(公告)日：2009-02-05
申请号：US12251430
申请日：2008-10-14
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L27/14
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在晶体管区域的绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

9. 发明授权

US07452782B2 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US07452782B2
公开(公告)日：2008-11-18
申请号：US11164402
申请日：2005-11-21
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L21/20
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在晶体管区域的绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

10. 发明申请

US20070114625A1 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US20070114625A1
公开(公告)日：2007-05-24
申请号：US11164402
申请日：2005-11-21
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L27/14
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在晶体管区域的绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

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