会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • High purity opaque silica glass
    • 高纯度不透明石英玻璃
    • US5977000A
    • 1999-11-02
    • US977887
    • 1997-11-25
    • Tatsuhiro SatoAkira FujinokiKyoichi InakiNobumasa YoshidaTohru Yokota
    • Tatsuhiro SatoAkira FujinokiKyoichi InakiNobumasa YoshidaTohru Yokota
    • C03B5/02C03B5/08C03B19/09C03B20/00C03C3/06C03C4/08C03C11/00
    • C03B5/08C03B19/09C03B20/00C03B5/021C03C3/06C03C2201/02C03C2201/80Y10S501/904Y10S501/905Y10T428/249969
    • Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and cooling after maintaining at the above temperature.
    • 密度为2.0〜2.18g / cm 3的不透明二氧化硅玻璃,二氧化硅玻璃中的钠和钾元素浓度为0.5ppm以下,OH基浓度为30ppm以下,并且含有具有以下的独立气泡的气泡 物理值:气泡直径为300μm以下,气泡密度为100,000〜1,000,000个气泡/ cm 3,以及不透明石英玻璃的制造方法,其特征在于,填充粒径为10〜350μm的石英原料粒子 在耐热模具中,将其在非氧化性气氛中从室温加热到低于50-150℃的温度,而不是以不升温速度将上述原料颗粒熔化的温度 超过50℃/分钟,然后缓慢加热至高于10℃至80℃的温度,高于石英原料颗粒以10℃/分钟或更低的速度熔化的温度, 并保持冷却 在上述温度下。
    • 2. 发明授权
    • Process for producing opaque silica glass
    • 生产不透明石英玻璃的方法
    • US5772714A
    • 1998-06-30
    • US682962
    • 1996-07-18
    • Tatsuhiro SatoAkira FujinokiKyoichi InakiNobumasa YoshidaTohru Yokota
    • Tatsuhiro SatoAkira FujinokiKyoichi InakiNobumasa YoshidaTohru Yokota
    • C03B5/02C03B5/08C03B19/09C03B20/00C03C3/06
    • C03B5/08C03B19/09C03B20/00C03B5/021C03C3/06C03C2201/02C03C2201/80Y10S501/904Y10S501/905Y10T428/249969
    • A process for producing opaque silica glass in which a quartz raw material grain having a particle size of 10 to 350 .mu.m is filled into a heat resistant mold, the quartz raw material grain is heated in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50.degree. to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-increase speed not exceeding 50.degree. C./minute, then, slowly heated up to a temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and the heated quartz raw material grain is further maintained at the temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted, followed by cooling down to the room temperature. Especially, in the case of producing a large scale opaque silica glass block, a quartz raw material grain filled into a heat-resistant mold is heated by a belt-like heating source located perpendicularly to a trunk of a filling layer of the quartz raw material grain so as to form a moving heating zone in the filling layer and the heating zone is successively moved either upwardly starting at the lower end portion of the filling layer or downwardly starting at the upper end portion thereof in a non-oxidizing atomosphere.
    • 将具有10〜350μm粒径的石英原料颗粒填充到耐热性模具中的不透明石英玻璃的制造方法,将石英原料颗粒从室温下在非氧化性气氛中加热 比上述原料颗粒以不超过50℃/分钟的升温速度熔化的温度低于50℃至150℃的温度,然后缓慢加热至高于10℃的温度 相对于石英原料粒子以10℃/分钟以下的速度熔融的温度为80℃以下,加热的石英原料粒子进一步保持在10〜80℃ 比石英原料晶粒熔化的温度高,然后冷却至室温。 特别是,在生产大型不透明石英玻璃块的情况下,填充在耐热性模具中的石英原料颗粒通过垂直于石英原料填充层的树干的带状加热源加热 从而在填充层中形成移动的加热区域,并且加热区域从填充层的下端部开始向上移动,或者从非氧化性空气的上端向下移动。
    • 9. 发明授权
    • Member for plasma etching device and method for manufacture thereof
    • 等离子体蚀刻装置的构件及其制造方法
    • US07645526B2
    • 2010-01-12
    • US10546798
    • 2003-09-16
    • Kyoichi InakiItsuo Araki
    • Kyoichi InakiItsuo Araki
    • B32B9/00B32B19/00C03C3/04C03C3/06C04B35/50
    • C23C26/00C23C4/11C23C4/18C23C30/00H01J37/32477H01L21/67069
    • A member for a plasma etching device, comprising a coating film of yttrium oxide or YAG having a coating film thickness of 10 μm or more, a coating film thickness variance of 15% or less, preferably a surface roughness (Ra) of 1 μm or less, formed on a surface of a member, comprising quartz glass which contains 1 to 10% by weight of yttrium oxide or YAG. The member for a plasma etching device has high plasma resistance, is not subjected to an abnormal etching on the basis of a partial change of electric properties and, accordingly, can be used for a long period of time. Even when the member is large enough to handle 12-inch Si wafers, the above-described advantageous properties are maintained and the member can be used for a long period of time.
    • 一种用于等离子体蚀刻装置的构件,其包括涂覆膜厚度为10μm或更大,涂膜厚度变化为15%或更小,优选表面粗糙度(Ra)为1μm或更大的氧化钇涂层或YAG涂层,或 较少,形成在构件的表面上,包括含有1-10重量%的氧化钇或YAG的石英玻璃。 用于等离子体蚀刻装置的构件具有高等离子体电阻,不会基于电性能的部分变化而进行异常蚀刻,因此可以长时间使用。 即使当该构件足够大以处理12英寸Si晶片时,仍保持上述有利的特性,并且该构件可以长时间使用。