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    • 6. 发明申请
    • SEMICONDUCTOR BRIDGE, IGNITER, AND GAS GENERATOR
    • 半导体桥,IGNITER和气体发电机
    • US20090126592A1
    • 2009-05-21
    • US12066163
    • 2006-09-05
    • Hirotaka MukunokiShigeru MaedaHiroki Taguchi
    • Hirotaka MukunokiShigeru MaedaHiroki Taguchi
    • F42B3/12
    • F42B3/13B60R21/26B60R2021/26029C06C9/00
    • The invention provides a semiconductor bridge, an igniter, and a gas generator each of which satisfies a high-speed responsiveness required of, for example, an automotive side inflator. The semiconductor bridge includes a bridge part heated by being supplied with a current. The bridge part is disposed on a substrate. The bridge part includes a first layer and an ignition bridge layer. The first layer is formed on the substrate and has insulating properties. The ignition bridge layer serves as a second layer disposed on the first layer. The width of the bridge part at the first layer and the width of the bridge part at the second layer are substantially equal to each other. A space is provided around the bridge part. With this structure, the diffusion of current and heat into the substrate can be restricted to the minimum level, and the ignition time can be quickened as an ignition characteristic. Each of the igniter and the gas generator includes the semiconductor bridge.
    • 本发明提供一种满足例如汽车侧充气机所需的高速响应性的半导体桥,点火器和气体发生器。 半导体桥包括通过供给电流而被加热的桥接部分。 桥接部分设置在基板上。 桥接部分包括第一层和点火桥层。 第一层形成在基板上并具有绝缘性。 点火桥层用作设置在第一层上的第二层。 第一层处的桥接部分的宽度和第二层处的桥接部分的宽度基本相等。 桥梁部分周围设有一个空间。 利用这种结构,电流和热量进入基板的扩散可以被限制到最小水平,并且点火时间可以作为点火特性加快。 点火器和气体发生器中的每一个包括半导体桥。
    • 7. 发明申请
    • Semiconductor Bridge Device and Igniter Including Semiconductor Bridge Circuit Device
    • 包括半导体桥接电路器件的半导体桥接器和点火器
    • US20080083343A1
    • 2008-04-10
    • US11664462
    • 2005-10-04
    • Shigeru MaedaHirotaka Mukunoki
    • Shigeru MaedaHirotaka Mukunoki
    • F42B3/13H01L23/48
    • F42B3/14F42B3/13H01L2924/0002H01L2924/00
    • There is provided a semiconductor bridge device wherein a reaction time for generating sparks is short and a spark generating amount is large. This semiconductor bridge device comprises a substrate, a pair of land portions, a bridge portion electrically connecting between the pair of the land portions, and an electrode pad arranged on each upper surface in the pair of the land portions and emitting sparks at the bridge portion through an electric current passed between the electrode pads, in which the pair of the land portions and the bridge portion consist of a laminate formed by alternately laminating a metal layer and a metal oxide layer plural times, and an outermost layer in the laminate is a metal layer, and a metal oxide having a decomposition temperature of higher than 1500° C. is used in the metal oxide layer.
    • 提供了一种用于产生火花的反应时间短并且火花发生量大的半导体桥式器件。 该半导体桥接器件包括衬底,一对接地部分,电连接在一对接地部分之间的桥接部分和布置在该对接地部分中的每个上表面上并在桥接部分处发射火花的电极焊盘 通过在电极焊盘之间通过的电流,其中一对接地部分和桥接部分由通过多次交替层叠金属层和金属氧化物层而形成的层压体组成,并且层压体中的最外层是 金属层和分解温度高于1500℃的金属氧化物用于金属氧化物层。