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    • 7. 发明授权
    • Method for producing bonded wafer
    • 接合晶片的制造方法
    • US08691665B2
    • 2014-04-08
    • US13514414
    • 2010-11-18
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • H01L21/30H01L21/46H01L21/00
    • H01L21/3247H01L21/302H01L21/3065H01L21/76254
    • The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
    • 本发明涉及一种接合晶片的制造方法,其特征在于,在含有氢或氯化氢的气氛中,对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理, 其中预先在其上放置接合晶片的基座的表面,在平坦化热处理时使用的基座被涂覆有硅膜。 结果,提供了一种接合晶片的制造方法,即使在将粘合晶片的薄膜的表面平坦化的热处理后,也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。