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1. 发明申请

US20100144108A1 METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：制造非易失性半导体存储器件的方法和非易失性半导体存储器件
公开(公告)号：US20100144108A1
公开(公告)日：2010-06-10
申请号：US12706668
申请日：2010-02-16
申请人： Takeshi SAKAI , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
发明人： Takeshi SAKAI , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
IPC分类号： H01L21/8246
CPC分类号： H01L27/11568 , H01L21/823842 , H01L21/82385 , H01L21/823857 , H01L21/823864 , H01L27/105 , H01L27/1052 , H01L27/11573
摘要： For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.
摘要翻译：为了增强具有MONOS型晶体管的非易失性半导体存储器件的高性能，非易失性半导体存储器件被提供有具有改进性能的MONOS型晶体管，其中MONOS非易失性存储器的存储单元包括控制晶体管和存储晶体管。控制晶体管的控制栅极包括n型多晶硅膜，并且形成在包括氧化硅膜的栅极绝缘膜上。存储晶体管的存储栅极包括n型多晶硅膜，并设置在控制栅极的一个侧壁上。存储器栅极包括具有低于控制栅极的薄层电阻的掺杂多晶硅膜，其包括通过将杂质离子注入未掺杂的硅膜形成的多晶硅膜。

2. 发明申请

US20080203466A1 METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
公开(公告)号：US20080203466A1
公开(公告)日：2008-08-28
申请号：US12114074
申请日：2008-05-02
申请人： Takeshi SAKAI , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
发明人： Takeshi SAKAI , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , H01L21/823842 , H01L21/82385 , H01L21/823857 , H01L21/823864 , H01L27/105 , H01L27/1052 , H01L27/11573
摘要： For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

3. 发明申请

US20110024820A1 METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：制造非易失性半导体存储器件的方法和非易失性半导体存储器件
公开(公告)号：US20110024820A1
公开(公告)日：2011-02-03
申请号：US12904923
申请日：2010-10-14
申请人： Takeshi SAKAI , Yasushi ISHII , Tsutomu OKAZAKI , Masaru NAKAMICHI , Toshikazu MATSUI , Kyoya NITTA , Satoru MACHIDA , Munekatsu NAKAGAWA , Yuichi TSUKADA
发明人： Takeshi SAKAI , Yasushi ISHII , Tsutomu OKAZAKI , Masaru NAKAMICHI , Toshikazu MATSUI , Kyoya NITTA , Satoru MACHIDA , Munekatsu NAKAGAWA , Yuichi TSUKADA
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , H01L21/823842 , H01L21/82385 , H01L21/823857 , H01L21/823864 , H01L27/105 , H01L27/1052 , H01L27/11573
摘要： For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.
摘要翻译：为了增强具有MONOS型晶体管的非易失性半导体存储器件的高性能，非易失性半导体存储器件被提供有具有改进性能的MONOS型晶体管，其中MONOS非易失性存储器的存储单元包括控制晶体管和存储晶体管。控制晶体管的控制栅极包括n型多晶硅膜，并且形成在包括氧化硅膜的栅极绝缘膜上。存储晶体管的存储栅极包括n型多晶硅膜，并设置在控制栅极的一个侧壁上。存储器栅极包括具有低于控制栅极的薄层电阻的掺杂多晶硅膜，其包括通过将杂质离子注入未掺杂的硅膜形成的多晶硅膜。

4. 发明申请

US20080206975A1 METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：制造非易失性半导体存储器件的方法和非易失性半导体存储器件
公开(公告)号：US20080206975A1
公开(公告)日：2008-08-28
申请号：US12114064
申请日：2008-05-02
申请人： Takeshi SAKAI , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
发明人： Takeshi SAKAI , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
IPC分类号： H01L21/28
CPC分类号： H01L27/11568 , H01L21/823842 , H01L21/82385 , H01L21/823857 , H01L21/823864 , H01L27/105 , H01L27/1052 , H01L27/11573
摘要： For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.
摘要翻译：为了增强具有MONOS型晶体管的非易失性半导体存储器件的高性能，非易失性半导体存储器件被提供有具有改进性能的MONOS型晶体管，其中MONOS非易失性存储器的存储单元包括控制晶体管和存储晶体管。控制晶体管的控制栅极包括n型多晶硅膜，并且形成在包括氧化硅膜的栅极绝缘膜上。存储晶体管的存储栅极包括n型多晶硅膜，并设置在控制栅极的一个侧壁上。存储器栅极包括具有低于控制栅极的薄层电阻的掺杂多晶硅膜，其包括通过将杂质离子注入未掺杂的硅膜形成的多晶硅膜。

5. 发明申请

US20120228624A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20120228624A1
公开(公告)日：2012-09-13
申请号：US13409342
申请日：2012-03-01
申请人： Takeshi SAKAI , Daisuke Sonoda
发明人： Takeshi SAKAI , Daisuke Sonoda
IPC分类号： H01L33/42
CPC分类号： H01L27/3276 , G02F1/13452 , G02F1/13458 , G02F2201/501
摘要： The image display device according to the present invention is an image display device where a pixel unit and an external connection terminal unit are provided on a substrate (SUB), and the pixel unit and the external connection terminal unit are connected by an aluminum wire (LN), having; an organic protective film (OPAS) directly covering the aluminum wire, except a contact hole (CH) of the external connection terminal unit and part of the pixel unit; and an ITO film (ITO) provided on the upper side of the organic protective film so as to cover the aluminum wire, including the external connection terminal unit and reaching to the pixel unit.
摘要翻译：根据本发明的图像显示装置是在基板（SUB）上设置像素单元和外部连接端子单元的图像显示装置，并且像素单元和外部连接端子单元通过铝线连接 LN），有; 直接覆盖铝线的有机保护膜（OPAS），除了外部连接端子单元的接触孔（CH）和像素单元的一部分之外; 以及设置在有机保护膜的上侧以覆盖包括外部连接端子单元并到达像素单元的铝线的ITO膜（ITO）。

6. 发明申请

US20130075877A1 SEMICONDUCTOR DEVICE HAVING LATERAL ELEMENT 有权
标题翻译：具有横向元件的半导体器件
公开(公告)号：US20130075877A1
公开(公告)日：2013-03-28
申请号：US13615912
申请日：2012-09-14
申请人： Takeshi SAKAI , Akira Yamada , Shigeki Takahashi , Youichi Ashida , Satoshi Shiraki
发明人： Takeshi SAKAI , Akira Yamada , Shigeki Takahashi , Youichi Ashida , Satoshi Shiraki
IPC分类号： H01L29/861
CPC分类号： H01L29/7394 , H01L21/765 , H01L29/0696 , H01L29/0834 , H01L29/404 , H01L29/405 , H01L29/41725 , H01L29/8611 , H01L29/868
摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.
摘要翻译：具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。横向元件在第一和第二电极之间通过电流。施加到第二电极的电压小于施加到第一电极的电压。电阻场板具有与第一端部相对的第一端部和第二端部。第二端部比第一端部更靠近第二电极。第二端部的杂质浓度为1×1018cm-3以上。

7. 发明申请

US20110001897A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20110001897A1
公开(公告)日：2011-01-06
申请号：US12828748
申请日：2010-07-01
申请人： Takeshi SAKAI
发明人： Takeshi SAKAI
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： A liquid crystal display device having thin film transistors which can alleviate the required alignment accuracy of a semiconductor film while suppressing the generation of an optical leak current is provided. The liquid crystal display device includes: a transparent substrate; gate electrodes which are stacked above the transparent substrate; source electrodes and drain electrodes which are stacked above the gate electrodes; and semiconductor films each of which is stacked above the gate electrode and controls an electric current between the source electrode and the drain electrode based on an electric field generated by the gate electrode, wherein the semiconductor film is formed into a planar shape, and includes a first region which overlaps with the gate electrode in plane and a second region which does not overlap with the gate electrode in plane, and the source electrode and the drain electrode are not connected to the semiconductor film in the second region, and are connected to the semiconductor film in the first region.
摘要翻译：提供一种具有薄膜晶体管的液晶显示装置，其能够抑制半导体薄膜的所需对准精度，同时抑制光泄漏电流的产生。液晶显示装置包括：透明基板; 层叠在透明基板上方的栅电极; 源电极和漏电极堆叠在栅电极上方; 以及半导体膜，其各自层叠在栅极电极上方，并且基于栅电极产生的电场来控制源电极和漏电极之间的电流，其中半导体膜形成为平面形状，并且包括第一区域与栅电极在平面内重叠，第二区域与栅电极不平行的第二区域，并且源电极和漏极电极未连接到第二区域中的半导体膜，并且与第二区域连接半导体薄膜在第一区域。

8. 发明申请

US20100201608A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100201608A1
公开(公告)日：2010-08-12
申请号：US12700815
申请日：2010-02-05
申请人： Takeshi SAKAI , Takuo Kaitoh
发明人： Takeshi SAKAI , Takuo Kaitoh
IPC分类号： G09G3/20 , H01J9/20
CPC分类号： G02F1/136204 , H01L27/0248 , H01L27/124
摘要： A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.
摘要翻译：提供了可以防止由于静电引起的薄膜晶体管的击穿的技术。一种显示装置的制造方法，在形成构成作为像素的组合的显示区域外的驱动电路的多个薄膜晶体管时，形成与薄膜晶体管的栅电极连接的第一布线，薄膜晶体管，用于执行驱动信号的产生操作;以及第二布线，其将所述薄膜晶体管的栅极彼此相邻地连接在与所述第一布线相同的层中的所述驱动单元的形成区域中，并且在所述第一布线之后切割所述第二布线形成连接的薄膜晶体管。

9. 发明申请

US20110255010A1 BROADCAST RECEIVING APPARATUS AND STARTING METHOD THEREOF 审中-公开
标题翻译：广播接收装置及其启动方法
公开(公告)号：US20110255010A1
公开(公告)日：2011-10-20
申请号：US13160542
申请日：2011-06-15
申请人： Takeshi SAKAI , Katsunobu Kimura
发明人： Takeshi SAKAI , Katsunobu Kimura
IPC分类号： H04N5/63
CPC分类号： H04N5/63 , H04N5/4401 , H04N5/781 , H04N5/85 , H04N21/42222 , H04N21/44218 , H04N21/4436
摘要： Display embodiments including arrangements wherein a waiting condition of a display apparatus includes a first waiting condition, and a second waiting condition being shorter in a starting time, from time when the operation is made for turning a power source ON until time when the image is displayed on a display portion, and smaller in a power consumption, comparing to those of the first waiting condition. A controller portion changes the waiting condition of the display apparatus into the second waiting condition, when a sensor detects the presence of a human being while under the first waiting condition, and changes the waiting condition of the display apparatus into the first waiting condition, when no operation is made for turning a power source ON, for a predetermined time period, after changing the waiting condition into the second waiting condition.
摘要翻译：显示实施例包括其中显示装置的等待状态包括第一等待条件，并且从开始打开电源的操作开始到显示图像的时间的开始时间较短的第二等待条件与第一等待条件相比，在显示部分上，功耗较小。当传感器在第一等待状态下检测到人的存在并将显示装置的等待状态改变为第一等待状态时，控制器部分将显示装置的等待状态改变为第二等待状态，当在将等待状态改变为第二等待状态之后，在预定时间段内不操作电源接通。

10. 发明申请

US20100038109A1 Joint Structure of Electric Wire, Stator of Rotary Electric Machine, Method for Manufacturing the Same 有权
标题翻译：电动机联轴器结构，旋转电机定子及其制造方法
公开(公告)号：US20100038109A1
公开(公告)日：2010-02-18
申请号：US12581717
申请日：2009-10-19
申请人： Takeshi SAKAI , Yoshimi Mori , Yasuhiko Kimura , Masahiko Honma , Fuminori Ishikawa
发明人： Takeshi SAKAI , Yoshimi Mori , Yasuhiko Kimura , Masahiko Honma , Fuminori Ishikawa
IPC分类号： H01R4/00
CPC分类号： H02K15/064 , H02K3/12 , H02K15/0081 , H02K15/0428 , Y10T29/49009 , Y10T29/49201
摘要： When electric wires (joint conductors) are disposed adjacent each other in a peeled state of coatings, a gap corresponding to the total thickness of both conductors' insulating films as skin layers is formed between end joined face portions of the conductors. The gap becomes larger because the conductors are tapered. Therefore, the adhesion between both conductors is impaired, with a consequent fear of occurrence of joining imperfection. In opposed joined face portions of electric wires (joint conductors), the conductors are deformed from the tips of their axes to the joined face side in such a manner that exposed portions at the tips of the conductors and insulating film faces located in the vicinity thereof are flush with each other or the exposed portions are projected. The gap formed between the electric wires (joint conductors) can be diminished, whereby the reliability of connection is improved and it becomes easier to perform the work of joint conductors, with the result that the productivity of a stator of a rotary electric machine such as an AC generator for a vehicle could be improved.
摘要翻译：当电线（接合导体）以剥离的涂层状态彼此相邻地布置时，在导体的端部接合面部之间形成与作为表层的两个导体绝缘膜的总厚度相对应的间隙。间隙变大，因为导体是锥形的。因此，两导体之间的粘合力受到损害，从而导致连接缺陷的发生。在电线（接合导体）的相对的接合面部分中，导体从其轴线的尖端变形到接合面侧，使得导体和绝缘膜面的尖端处的暴露部分位于其附近彼此齐平或暴露部分被投影。电线（接合导体）之间形成的间隙可以减小，从而提高连接的可靠性，并且更容易进行接合导体的加工，结果是旋转电机的定子的生产率例如可以改善用于车辆的AC发电机。

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