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1. 发明申请

US20070090397A1 Semiconductor photo-detecting element 有权
标题翻译：半导体光电检测元件
公开(公告)号：US20070090397A1
公开(公告)日：2007-04-26
申请号：US10589004
申请日：2005-02-04
申请人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
发明人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
IPC分类号： H01L31/00
CPC分类号： H01L31/1075
摘要： In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.
摘要翻译：在半导体光检测元件（雪崩光电二极管）中，通过并入具有高性能乘法特性的乘法层来获得高灵敏度元件。通过使用减少施加到蚀刻阻挡层的电场的结构，可以使用具有更高性能乘法特性的乘法层（与高电场进行乘法的乘法层）。实现这一点的第一种方法是使用导电型倍增层。第二种方法是使用其中结合有第二导电类型的场缓冲层的结构。作为使用这些方法的结果，获得了将低于乘法器电场的电场施加到蚀刻停止层的结构。

2. 发明授权

US07560751B2 Semiconductor photo-detecting element 有权
标题翻译：半导体光电检测元件
公开(公告)号：US07560751B2
公开(公告)日：2009-07-14
申请号：US10589004
申请日：2005-02-04
申请人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
发明人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.
摘要翻译：在半导体光检测元件（雪崩光电二极管）中，通过并入具有高性能乘法特性的乘法层来获得高灵敏度元件。通过使用减少施加到蚀刻阻挡层的电场的结构，可以使用具有更高性能乘法特性的乘法层（与高电场进行乘法的乘法层）。实现这一点的第一种方法是使用导电型倍增层。第二种方法是使用其中结合有第二导电类型的场缓冲层的结构。作为使用这些方法的结果，获得了将低于乘法器电场的电场施加到蚀刻停止层的结构。

3. 发明申请

US20100279457A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-RECEIVING DEVICE 失效
标题翻译：制造半导体光接收装置的方法
公开(公告)号：US20100279457A1
公开(公告)日：2010-11-04
申请号：US12839649
申请日：2010-07-20
申请人： Kazuhiro SHIBA , Kikuo Makita , Takeshi Nakata
发明人： Kazuhiro SHIBA , Kikuo Makita , Takeshi Nakata
IPC分类号： H01L31/18
CPC分类号： H01L31/02161 , H01L31/035281 , H01L31/107 , Y02E10/50
摘要： Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要翻译：公开了一种具有高再现性和可靠性的半导体光接收装置的制造方法。具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6，暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

4. 发明申请

US20090050933A1 SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体光接收装置及其制造方法
公开(公告)号：US20090050933A1
公开(公告)日：2009-02-26
申请号：US11815003
申请日：2005-12-15
申请人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
发明人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
IPC分类号： H01L31/0304 , H01L21/00
CPC分类号： H01L31/02161 , H01L31/035281 , H01L31/107 , Y02E10/50
摘要： Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要翻译：公开了一种具有高再现性和可靠性的半导体光接收装置。还公开了一种用于制造半导体光接收装置的方法。具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6，暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

5. 发明授权

US08148229B2 Method for manufacturing a semiconductor light-receiving device 失效
标题翻译：半导体光接收装置的制造方法
公开(公告)号：US08148229B2
公开(公告)日：2012-04-03
申请号：US12839649
申请日：2010-07-20
申请人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
发明人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
IPC分类号： H01L31/18
CPC分类号： H01L31/02161 , H01L31/035281 , H01L31/107 , Y02E10/50
摘要： Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要翻译：公开了一种具有高再现性和可靠性的半导体光接收装置的制造方法。具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6，暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

6. 发明授权

US5204539A Avalanche photodiode with hetero-periodical structure 失效
标题翻译：具有异常结构的AVALANCHE光电
公开(公告)号：US5204539A
公开(公告)日：1993-04-20
申请号：US826494
申请日：1992-01-27
申请人： Masayoshi Tsuji , Kikuo Makita
发明人： Masayoshi Tsuji , Kikuo Makita
IPC分类号： H01L31/0352 , H01L31/107
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1075 , Y10S977/76 , Y10S977/761 , Y10S977/815
摘要： An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a multi-quantum barrier layer consisting of alternately provided short-width barrier and well layers. The barrier and well layers include respectively first and second III-group elements which meet the following conditions:E.sub.A E.sub.B +E.sub.gBwhere E.sub.A and E.sub.B are average ionization energies of the first and second III-group elements respectively, and E.sub.gA and E.sub.gB are forbidden band gap energies, respectively.

7. 发明授权

US07883911B2 Method for fabricating photodiodes 失效
标题翻译：制造光电二极管的方法
公开(公告)号：US07883911B2
公开(公告)日：2011-02-08
申请号：US12402223
申请日：2009-03-11
申请人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
发明人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
IPC分类号： H01L21/00
CPC分类号： H01L31/022408 , H01L31/108
摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
摘要翻译：肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。孔径的直径小于入射光的波长。

8. 发明申请

US20100200941A1 PHOTODIODE, OPTICAL COMMUNICATION DEVICE, AND OPTICAL INTERCONNECTION MODULE 审中-公开
标题翻译：光通信，光通信设备和光互联模块
公开(公告)号：US20100200941A1
公开(公告)日：2010-08-12
申请号：US12519701
申请日：2007-11-28
申请人： Junichi Fujikata , Daisuke Okamoto , Kikuo Makita , Kenichi Nishi , Keishi Ohashi
发明人： Junichi Fujikata , Daisuke Okamoto , Kikuo Makita , Kenichi Nishi , Keishi Ohashi
IPC分类号： H01L31/0232 , H01L31/0264 , H01L31/108 , H01L31/105
CPC分类号： H01L31/1085 , B82Y20/00 , G02B6/1226 , H01L31/0224 , H01L31/105
摘要： Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.
摘要翻译：旨在提供一种器件结构，这使得光接收灵敏度和光电二极管的高速度兼容。还提供了在半导体层的表面上形成有导电层的肖特基势垒型光电二极管。光电二极管构成为能够入射到半导体层的背侧，并且在肖特基（Schottky）周围形成从半导体层的背面入射的光引起表面等离子体共振的周期性结构光电二极管的结。

9. 发明授权

US07488925B2 Light control apparatus having a device for controlling the input signal light of an optical transmission path 失效
标题翻译：光控制装置具有用于控制光传输路径的输入信号光的装置
公开(公告)号：US07488925B2
公开(公告)日：2009-02-10
申请号：US10579499
申请日：2004-11-17
申请人： Kikuo Makita , Toshitaka Torikai
发明人： Kikuo Makita , Toshitaka Torikai
IPC分类号： H01J40/14
CPC分类号： G02B6/3586 , G02B6/266 , G02B6/353 , G02B6/3552 , G02B6/3568 , G02B6/3594 , G02F1/015 , G02F2001/0155 , G02F2203/52
摘要： A light control apparatus includes a part for splitting an input light entering the light control apparatus through an optical fiber, a photoelectric conversion part for converting a monitor light into an electrical signal, and a third part for controlling the opening and closing of an optical transmission path for a signal light based on the electrical signal. The light power of an output light is controlled by the opening and closing amount of the optical transmission path which is controlled depending on the amount of the electrical signal output in accordance with the level of the monitor light. A semiconductor photovoltaic device capable of performing photoelectric conversion without using an external power source is used as the photoelectric conversion part. An optical shutter using a micromachine, or an optical device such as absorption-type modulator or refractive index-type modulator is used as the third part.
摘要翻译：光控制装置包括：通过光纤分割入射到光控制装置的输入光的部分;将监视光转换为电信号的光电转换部;以及用于控制光传输的开闭的第三部基于电信号的信号光路径。输出光的光功率由根据监视光的电平输出的电信号量控制的光传输路径的开闭量来控制。作为光电转换部使用能够不使用外部电源进行光电转换的半导体光电转换装置。作为第三部分，使用使用微机械的光学快门或诸如吸收型调制器或折射率型调制器的光学装置。

10. 发明申请

US20090176327A1 PHOTODIODE AND METHOD FOR FABRICATING SAME 失效
标题翻译：光致抗体及其制造方法
公开(公告)号：US20090176327A1
公开(公告)日：2009-07-09
申请号：US12402223
申请日：2009-03-11
申请人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
发明人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
IPC分类号： H01L21/28
CPC分类号： H01L31/022408 , H01L31/108
摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
摘要翻译：肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。孔径的直径小于入射光的波长。

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