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1. 发明申请

US20090050933A1 SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体光接收装置及其制造方法
公开(公告)号：US20090050933A1
公开(公告)日：2009-02-26
申请号：US11815003
申请日：2005-12-15
申请人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
发明人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
IPC分类号： H01L31/0304 , H01L21/00
CPC分类号： H01L31/02161 , H01L31/035281 , H01L31/107 , Y02E10/50
摘要： Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要翻译：公开了一种具有高再现性和可靠性的半导体光接收装置。还公开了一种用于制造半导体光接收装置的方法。具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6，暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

2. 发明授权

US08148229B2 Method for manufacturing a semiconductor light-receiving device 失效
标题翻译：半导体光接收装置的制造方法
公开(公告)号：US08148229B2
公开(公告)日：2012-04-03
申请号：US12839649
申请日：2010-07-20
申请人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
发明人： Kazuhiro Shiba , Kikuo Makita , Takeshi Nakata
IPC分类号： H01L31/18
CPC分类号： H01L31/02161 , H01L31/035281 , H01L31/107 , Y02E10/50
摘要： Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要翻译：公开了一种具有高再现性和可靠性的半导体光接收装置的制造方法。具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6，暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

3. 发明申请

US20100279457A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-RECEIVING DEVICE 失效
标题翻译：制造半导体光接收装置的方法
公开(公告)号：US20100279457A1
公开(公告)日：2010-11-04
申请号：US12839649
申请日：2010-07-20
申请人： Kazuhiro SHIBA , Kikuo Makita , Takeshi Nakata
发明人： Kazuhiro SHIBA , Kikuo Makita , Takeshi Nakata
IPC分类号： H01L31/18
CPC分类号： H01L31/02161 , H01L31/035281 , H01L31/107 , Y02E10/50
摘要： Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要翻译：公开了一种具有高再现性和可靠性的半导体光接收装置的制造方法。具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6，暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

4. 发明授权

US07560751B2 Semiconductor photo-detecting element 有权
标题翻译：半导体光电检测元件
公开(公告)号：US07560751B2
公开(公告)日：2009-07-14
申请号：US10589004
申请日：2005-02-04
申请人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
发明人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.
摘要翻译：在半导体光检测元件（雪崩光电二极管）中，通过并入具有高性能乘法特性的乘法层来获得高灵敏度元件。通过使用减少施加到蚀刻阻挡层的电场的结构，可以使用具有更高性能乘法特性的乘法层（与高电场进行乘法的乘法层）。实现这一点的第一种方法是使用导电型倍增层。第二种方法是使用其中结合有第二导电类型的场缓冲层的结构。作为使用这些方法的结果，获得了将低于乘法器电场的电场施加到蚀刻停止层的结构。

5. 发明申请

US20070090397A1 Semiconductor photo-detecting element 有权
标题翻译：半导体光电检测元件
公开(公告)号：US20070090397A1
公开(公告)日：2007-04-26
申请号：US10589004
申请日：2005-02-04
申请人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
发明人： Takeshi Nakata , Kikuo Makita , Atsushi Shono
IPC分类号： H01L31/00
CPC分类号： H01L31/1075
摘要： In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.
摘要翻译：在半导体光检测元件（雪崩光电二极管）中，通过并入具有高性能乘法特性的乘法层来获得高灵敏度元件。通过使用减少施加到蚀刻阻挡层的电场的结构，可以使用具有更高性能乘法特性的乘法层（与高电场进行乘法的乘法层）。实现这一点的第一种方法是使用导电型倍增层。第二种方法是使用其中结合有第二导电类型的场缓冲层的结构。作为使用这些方法的结果，获得了将低于乘法器电场的电场施加到蚀刻停止层的结构。

6. 发明申请

US20090160033A1 SEMICONDUCTOR OPTICAL ELEMENT 失效
标题翻译：半导体光学元件
公开(公告)号：US20090160033A1
公开(公告)日：2009-06-25
申请号：US12095031
申请日：2006-12-20
申请人： Sawaki Watanabe , Kazuhiro Shiba , Takeshi Nakata
发明人： Sawaki Watanabe , Kazuhiro Shiba , Takeshi Nakata
IPC分类号： H01L29/06 , H01L31/0352 , H01L33/00
CPC分类号： H01L33/20 , H01L31/022408 , H01L31/035281 , H01L31/1075 , H01L31/109 , Y02E10/50
摘要： A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region; a second mesa 12 provided over the semiconductor substrate 101, and having a semiconductor layer and a second electrode (n-side electrode 121) provided over the semiconductor layer; and a third mesa 13 provided over the semiconductor substrate 101, and having a semiconductor layer, wherein the third mesa 13 is arranged so as to surround the first mesa 11.
摘要翻译：光接收元件1具有半导体衬底101; 设置在半导体衬底101上的第一台面11，并且具有有源区和设置在有源区上的第一电极（p侧电极111）; 设置在半导体衬底101上的第二台面12，并且具有设置在半导体层上的半导体层和第二电极（n侧电极121）; 以及设置在半导体衬底101上并具有半导体层的第三台面13，其中第三台面13布置成围绕第一台面11。

7. 发明授权

US07952172B2 Semiconductor optical element 失效
标题翻译：半导体光学元件
公开(公告)号：US07952172B2
公开(公告)日：2011-05-31
申请号：US12095031
申请日：2006-12-20
申请人： Sawaki Watanabe , Kazuhiro Shiba , Takeshi Nakata
发明人： Sawaki Watanabe , Kazuhiro Shiba , Takeshi Nakata
IPC分类号： H01L29/06
CPC分类号： H01L33/20 , H01L31/022408 , H01L31/035281 , H01L31/1075 , H01L31/109 , Y02E10/50
摘要： A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region; a second mesa 12 provided over the semiconductor substrate 101, and having a semiconductor layer and a second electrode (n-side electrode 121) provided over the semiconductor layer; and a third mesa 13 provided over the semiconductor substrate 101, and having a semiconductor layer, wherein the third mesa 13 is arranged so as to surround the first mesa 11.
摘要翻译：光接收元件1具有半导体衬底101; 设置在半导体衬底101上的第一台面11，并且具有有源区和设置在有源区上的第一电极（p侧电极111）; 设置在半导体衬底101上的第二台面12，并且具有设置在半导体层上的半导体层和第二电极（n侧电极121）; 以及设置在半导体衬底101上并具有半导体层的第三台面13，其中第三台面13布置成围绕第一台面11。

8. 发明授权

US09473262B2 Optical communication apparatus, optical communication system, and path control method 有权
标题翻译：光通信装置，光通信系统和路径控制方法
公开(公告)号：US09473262B2
公开(公告)日：2016-10-18
申请号：US13610476
申请日：2012-09-11
申请人： Takeshi Nakata
发明人： Takeshi Nakata
IPC分类号： H04J14/00 , H04J14/02
CPC分类号： H04J14/0212 , H04J14/021 , H04J14/0217
摘要： An optical communication apparatus of a wavelength division multiplexing transmission system has a transponder having a double-wavelength tunable transceiver and a transceiver including a switching controller, and a ROADM device having a device that copes with a colorless function and a directionless function and can operate in cooperation with the transponder.
摘要翻译：波分复用传输系统的光通信装置具有一个具有双波长可调谐收发器的应答器和一个包括切换控制器的收发器，以及具有处理无色功能和无方向功能的设备的ROADM设备，并且可以在与转发器的合作。

9. 发明授权

US07994601B2 Semiconductor light receiving device 失效
标题翻译：半导体光接收装置
公开(公告)号：US07994601B2
公开(公告)日：2011-08-09
申请号：US12162640
申请日：2007-01-26
申请人： Takeshi Nakata
发明人： Takeshi Nakata
IPC分类号： H01L31/07
CPC分类号： H01L31/107
摘要： The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers (3, 4) formed on an InP semiconductor substrate (1) wherein a buffer layer (21) containing a quaternary compositional material is formed between the InP semiconductor substrate (1) and the light absorption layers (3, 4).
摘要翻译：本发明提供了一种即使在强光输入时也能够防止局部发热的半导体光接收装置，具有高速，高灵敏度的特性，并表现出高的光输入阻力。半导体光接收装置包括形成在InP半导体衬底（1）上的光吸收层（3,4），其中在InP半导体衬底（1）和光吸收层（1）之间形成包含四元组成材料的缓冲层（21）（3,4）。

10. 发明授权

US4867193A Apparatus for controlling a soap concentration in cleaning solvent 失效
标题翻译：用于控制清洁溶剂中肥皂浓度的装置
公开(公告)号：US4867193A
公开(公告)日：1989-09-19
申请号：US302438
申请日：1989-01-26
申请人： Takahiro Hayashi , Takeshi Nakata
发明人： Takahiro Hayashi , Takeshi Nakata
IPC分类号： D06F43/00 , G05D21/02
CPC分类号： G05D21/02 , D06F43/005 , Y10T137/2509
摘要： A soap concentration control apparatus comprising: a pump for supplying a cleaning solvent to a washing tub; a liquid quantity sensor for measuring a quantity of the solvent supplied to the washing tub by the pump; a soap supplying pump for supplying a soap to the washing tub; a sampling container for sampling the solvent; a soap concentration measuring sensor for measuring a soap concentration in the sampled solvent; a setting device for setting a desired soap concentration; an arithmetic device for calculating an operating time of the soap supplying pump required for making a soap concentration of the solvent in the washing tub approach to the set desired soap concentration on the basis of the measured quantity of solvent, the measured soap concentration and the soap supplying capacity per unit time of the soap supplying pump; and a controller for operating the soap supplying pump on the basis of the calculation result of the arithmetic device, which is useful to maintain a desired soap concentration in the dry cleaning machine thereby providing a constant finish of the laundry.
摘要翻译：一种肥皂浓度控制装置，包括：用于将洗涤溶剂供应到洗涤桶的泵; 液体量传感器，用于测量由所述泵供应到所述洗涤桶的溶剂的量; 用于向洗涤桶供应肥皂的肥皂供应泵; 用于取样溶剂的取样容器; 用于测量取样溶剂中的皂浓度的皂浓度测量传感器; 用于设定所需皂浓度的设定装置; 计算装置，用于根据所测量的溶剂量，所测量的皂浓度和皂量，计算使洗涤桶中的溶剂的皂浓度达到设定的所需皂浓度所需的肥皂供应泵的操作时间供应肥皂供应泵每单位时间的供应能力; 以及控制器，其基于运算装置的计算结果来操作肥皂供应泵，其可用于在干洗机中保持期望的肥皂浓度，从而提供洗衣物的恒定完成。

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