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    • 6. 发明授权
    • Mask structure and method of making the same
    • 面膜结构及制作方法
    • US5861603A
    • 1999-01-19
    • US884622
    • 1997-06-27
    • Takeshi MiyachiHiroshi MaeharaMasatake Akaike
    • Takeshi MiyachiHiroshi MaeharaMasatake Akaike
    • B23K26/32G03F1/22H01L21/027B23K26/00
    • H01L21/0278G03F1/22
    • A method of manufacturing a mask in which laser radiation is projected to a mask substrate of silicon and a supporting frame of heat resisting glass, while a voltage of about 1000-10000 V is applied between the mask substrate and the supporting frame. Cooling water is caused to flow to suppress temperature rise due to the irradiation, to maintain the mask substrate and the supporting frame at a predetermined normal temperature (about the mask temperature in a lithographic pattern transfer process). The light projecting step is performed for a period not shorter than 10 minutes whereby anodic bonding of the mask substrate with the supporting frame is achieved. This prevents a shift of the mask pattern and/or deformation of the mask substrate, and it assures the manufacture of a high precision mask.
    • 制造掩模的方法,其中激光辐射投射到硅的掩模基板和耐热玻璃的支撑框架上,同时在掩模基板和支撑框架之间施加约1000-10000V的电压。 导致冷却水流动以抑制由于照射引起的温度上升,从而将掩模基板和支撑框架保持在预定的常温(约为平版印刷图案转印工艺中的掩模温度)。 光投射步骤进行不少于10分钟的时间,由此实现掩模基板与支撑框架的阳极接合。 这防止了掩模图案的偏移和/或掩模基板的变形,并且确保了高精度掩模的制造。