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1. 发明申请

US20100112482A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：环状结构的聚合单体，聚合物，耐腐蚀保护涂料组合物，耐腐蚀组合物和图案处理
公开(公告)号：US20100112482A1
公开(公告)日：2010-05-06
申请号：US12608556
申请日：2009-10-29
申请人： Takeru WATANABE , Satoshi SHINACHI , Takeshi KINSHO , Koji HASEGAWA , Yuji HARADA , Jun HATAKEYAMA , Kazunori MAEDA , Tomohiro KOBAYASHI
发明人： Takeru WATANABE , Satoshi SHINACHI , Takeshi KINSHO , Koji HASEGAWA , Yuji HARADA , Jun HATAKEYAMA , Kazunori MAEDA , Tomohiro KOBAYASHI
IPC分类号： G03F7/004 , C07D307/04 , C07D319/06 , C07D315/00 , C07D307/77 , C08F114/18 , C08F214/18 , C08L27/12 , C08K5/06 , G03F7/20
CPC分类号： G03F7/11 , C07D307/04 , C07D307/77 , C07D315/00 , C07D319/06 , C08F14/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08F2/00
摘要： A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C1-C20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.
摘要翻译：环状缩醛结构的氟化单体具有式（1），其中R是可以被卤素取代或被氧或羰基分离的C1-C20烷基，Z是与亚烷氧基形成环的二价有机基团，并含有可聚合不饱和基团。衍生自氟化单体的聚合物可赋予适当的防水性，水滑性，亲油性，酸性和水解性，并且可用于配制保护涂料组合物和抗蚀剂组合物。

2. 发明申请

US20090233242A1 LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：含有LACTONE的化合物，聚合物，电阻组合物和图案处理
公开(公告)号：US20090233242A1
公开(公告)日：2009-09-17
申请号：US12403317
申请日：2009-03-12
申请人： Koji HASEGAWA , Satoshi SHINACHI , Katsuhiro KOBAYASHI , Tsunehiro NISHI , Takeshi KINSHO
发明人： Koji HASEGAWA , Satoshi SHINACHI , Katsuhiro KOBAYASHI , Tsunehiro NISHI , Takeshi KINSHO
IPC分类号： G03F7/20 , C07D307/87 , C08F24/00
CPC分类号： C07D307/83 , C07D307/85 , C07D311/74 , C07D313/08 , C07D493/22 , Y10S430/108 , Y10S430/111
摘要： Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 3, 4 or 5. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.
摘要翻译：具有式（1）的含内酯的化合物是新的，其中R 1是H，F，甲基或三氟甲基，R 2和R 3是H或一价烃基，或者R 2和R 3可以一起形成脂族烃环，R 4是H或CO 2 R 5， R5是一价烃基，W是CH 2，O或S，k 1是3,4或5.它们可用作产生对辐射<= 500nm透明的聚合物的单体。包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物表现出优异的性能，包括分辨率，LER，图案密度依赖性和曝光余量。

3. 发明申请

US20090035699A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：氟化单体，氟化聚合物，耐蚀组合物和图案处理
公开(公告)号：US20090035699A1
公开(公告)日：2009-02-05
申请号：US12146375
申请日：2008-06-25
申请人： Koji HASEGAWA , Takeshi KINSHO , Katsuhiro KOBAYASHI , Tsunehiro NISHI , Takeru WATANABE
发明人： Koji HASEGAWA , Takeshi KINSHO , Katsuhiro KOBAYASHI , Tsunehiro NISHI , Takeru WATANABE
IPC分类号： G03F7/20 , C08F214/18 , G03F7/004 , C08F16/24 , C07C69/593 , C07C69/608
CPC分类号： C07C69/67 , C07C69/753 , C07C2601/08 , C07C2602/42 , C08F220/24 , C08F220/26 , C08F232/08 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. R1 is H or monovalent C1-C20 hydrocarbon group, R2 is H, F, methyl or trifluoromethyl, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, or R3 and R4 may form an aliphatic hydrocarbon ring, and A is a divalent C1-C6 hydrocarbon group.
摘要翻译：式（1）的氟化单体可用于制备用于制备辐射敏感抗蚀剂组合物的聚合物。 R1是H或一价C1-C20烃基，R2是H，F，甲基或三氟甲基，R3和R4是H或一价C1-C8烃基，或R3和R4可以形成脂族烃环，A是二价C1-C6烃基。

4. 发明申请

US20110236831A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：乙烯化合物，聚合物，耐火组合物和方法
公开(公告)号：US20110236831A1
公开(公告)日：2011-09-29
申请号：US13069824
申请日：2011-03-23
申请人： Koji HASEGAWA , Jun HATAKEYAMA , Takeshi NAGATA , Seiichiro TACHIBANA , Takeshi KINSHO
发明人： Koji HASEGAWA , Jun HATAKEYAMA , Takeshi NAGATA , Seiichiro TACHIBANA , Takeshi KINSHO
IPC分类号： G03F7/20 , C07C69/013 , C08F224/00 , G03F7/004 , C07C69/62
CPC分类号： C07C69/54 , C07C69/653 , C07C2603/68 , C07C2603/74 , C08F20/28 , C08F224/00 , G03F1/32 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： The invention provides an acetal compound containing an adamantane ring having an alcoholic hydroxyl group which is protected with an acetal group having a carbonyl moiety of branched structure. A photoresist film comprising a polymer comprising recurring units derived from the acetal compound and an acid generator is characterized by a high dissolution contrast when it is subjected to exposure and organic solvent development to form an image via positive/negative reversal.
摘要翻译：本发明提供了含有具有醇羟基的金刚烷环的缩醛化合物，该醇羟基被具有支链结构的羰基部分的缩醛基保护。包含含有衍生自缩醛化合物的重复单元和酸产生剂的聚合物的光致抗蚀剂膜的特征在于当经受曝光和有机溶剂显影时，通过正/负反转形成图像时的高溶解度对比度。

5. 发明申请

US20080199806A1 PATTERNING PROCESS AND RESIST COMPOSITION 有权
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20080199806A1
公开(公告)日：2008-08-21
申请号：US12029940
申请日：2008-02-12
申请人： Jun HATAKEYAMA , Takao YOSHIHARA , Takeshi KINSHO , Koji HASEGAWA , Yoshio KAWAI , Katsuya TAKEMURA
发明人： Jun HATAKEYAMA , Takao YOSHIHARA , Takeshi KINSHO , Koji HASEGAWA , Yoshio KAWAI , Katsuya TAKEMURA
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0035 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜，对抗蚀剂膜进行热处理和曝光来形成图案用显影剂进行辐射，热处理和显影抗蚀剂膜，并使抗蚀剂膜在酸和/或热的帮助下交联和固化。然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

6. 发明申请

US20120083580A1 FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID 有权
标题翻译：氟化酯单体，制备方法，氟化酯聚合物和二氟羧酸羧酸
公开(公告)号：US20120083580A1
公开(公告)日：2012-04-05
申请号：US13240925
申请日：2011-09-22
申请人： Takeshi KINSHO , Yuuki Suka , Yuji Harada , Koji Hasegawa , Takeshi Sasami
发明人： Takeshi KINSHO , Yuuki Suka , Yuji Harada , Koji Hasegawa , Takeshi Sasami
IPC分类号： C08F22/18 , C07C67/03 , C07C59/115 , C07C49/173 , C07C69/675 , C07C69/54
CPC分类号： G03F7/038 , C07C51/00 , C07C69/73 , C08F220/22 , C08F222/18 , C08F2220/283 , G03F7/027 , C07C59/115
摘要： A fluorinated ester monomer is provided having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are H or a monovalent hydrocarbon group, or R2 and R3 forms a hydrocarbon ring, R4 is a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials.
摘要翻译：提供具有式（1）的氟化酯单体，其中R 1是H，CH 3或CF 3，R 2和R 3是H或一价烃基，或R 2和R 3形成烃环，R 4是一价烃基，k是从单体获得的聚合物对波长高达200nm的辐射具有透明度，并进行适当的碱水解，使得可以通过选择其结构来调节任何拒水性，水滑和表面偏析，并且可用于形成ArF浸渍光刻材料。

7. 发明申请

US20110160481A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS 有权
标题翻译：新型磺化盐和衍生物，光致发生剂，抗蚀剂组合物和方法
公开(公告)号：US20110160481A1
公开(公告)日：2011-06-30
申请号：US13043683
申请日：2011-03-09
申请人： Katsuhiro KOBAYASHI , Youichi OHSAWA , Takeshi KINSHO , Takeru WATANABE
发明人： Katsuhiro KOBAYASHI , Youichi OHSAWA , Takeshi KINSHO , Takeru WATANABE
IPC分类号： C07C309/08
CPC分类号： C07C381/12 , C07C309/08 , C07C381/00 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译：磺酸盐具有下式：HOCH2CH2CF2CF2SO3-M +，其中M +是Li，Na，K，铵或四甲基铵离子。衍生自这些盐的鎓盐，肟磺酸盐和磺酰氧基酰亚胺是化学放大抗蚀剂组合物中有效的光酸产生剂。

8. 发明申请

US20120183893A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20120183893A1
公开(公告)日：2012-07-19
申请号：US13427653
申请日：2012-03-22
申请人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
发明人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
IPC分类号： G03F1/76
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译：本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些）并且不具有与氮原子共价键合的氢原子作为碱性中心。

9. 发明申请

US20120183892A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
公开(公告)号：US20120183892A1
公开(公告)日：2012-07-19
申请号：US13427621
申请日：2012-03-22
申请人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
发明人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
IPC分类号： G03F1/76 , G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

10. 发明申请

US20120142193A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用相同的底漆膜组合物和图案处理方法
公开(公告)号：US20120142193A1
公开(公告)日：2012-06-07
申请号：US13292696
申请日：2011-11-09
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
CPC分类号： G03F7/11 , G03F7/091 , G03F7/095
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和一种或多种由以下通式（2）表示的化合物和/或其等同体。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。

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