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1. 发明授权

US09034661B2 Method for producing molecule immobilizing substrate, and molecule immobilizing substrate 有权
标题翻译：制备分子固定底物的方法和分子固定底物
公开(公告)号：US09034661B2
公开(公告)日：2015-05-19
申请号：US12709020
申请日：2010-02-19
申请人： Wataru Kusaki , Toshinobu Ishihara , Takeshi Kinsho , Takeru Watanabe
发明人： Wataru Kusaki , Toshinobu Ishihara , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G01N33/544 , G01N33/543 , G01N33/53 , C08L83/04 , C08L83/06
CPC分类号： G01N33/54393 , C08L83/04 , C08L83/06 , G01N33/543 , G01N33/54353
摘要： There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: forming, on a substrate, a monomolecular film including hydroxyl groups, cyano groups, or oxiranyl groups, which are oriented toward an outmost surface of the monomolecular film; and chemically modifying the hydroxyl groups, cyano groups, or oxiranyl groups of the monomolecular film to transform them into carboxyl groups, to thereby form, on the substrate, the monomolecular film including the carboxyl groups, which are oriented toward an outmost surface of the monomolecular film. There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.
摘要翻译：公开了一种分子固定基板的制造方法，至少包括以下步骤：在基板上形成包含羟基，氰基或环氧乙烷基的单分子膜，该单分子膜朝向单分子膜的最外表面 ; 并对单分子膜的羟基，氰基或环氧乙烷基进行化学改性，将其转化为羧基，从而在基材上形成包含羧基的单分子膜，该单分子膜朝向单分子膜的最外表面电影。可以提供：在通过将分子固定在基材上进行测定的情况下，制备不存在固定化分子剥离问题的分子固定化基质的方法。

2. 发明授权

US08835092B2 Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权
标题翻译：抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物
公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/095 , G03F7/11 , G03F7/40 , G03F7/09 , C07C69/753 , C08L61/06
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

3. 发明授权

US08609889B2 Photoacid generator, resist composition, and patterning process 有权
标题翻译：光酸发生剂，抗蚀剂组合物和图案化工艺
公开(公告)号：US08609889B2
公开(公告)日：2013-12-17
申请号：US12828557
申请日：2010-07-01
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/028 , G03F7/26 , C07C309/06 , C07C309/07
CPC分类号： C07C309/12 , C07C381/12 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要翻译：光致酸发生剂产生在磺酸盐部分中具有大体积的环状结构的磺酸和直链烃基，因此显示受控的酸扩散行为和适当的迁移率。 PAG与树脂完全兼容以形成在器件制造过程中表现良好的抗蚀剂组合物，并解决了分辨率，LWR和曝光宽容度的问题。

4. 发明授权

US08592133B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08592133B2
公开(公告)日：2013-11-26
申请号：US13427621
申请日：2012-03-22
申请人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
发明人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/20 , G03F7/028 , G03F7/40 , G03F1/08
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译：本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些）并且不具有与氮原子共价键合的氢原子作为碱性中心。

5. 发明授权

US08313890B2 Antireflective coating composition, antireflective coating, and patterning process 有权
标题翻译：抗反射涂料组合物，抗反射涂层和图案化工艺
公开(公告)号：US08313890B2
公开(公告)日：2012-11-20
申请号：US12636546
申请日：2009-12-11
申请人： Seiichiro Tachibana , Kazumi Noda , Takeru Watanabe , Jun Hatakeyama , Takeshi Kinsho
发明人： Seiichiro Tachibana , Kazumi Noda , Takeru Watanabe , Jun Hatakeyama , Takeshi Kinsho
IPC分类号： G03F7/11 , G03F7/40 , C08L31/02
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译：包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。

6. 发明申请

US20120183893A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20120183893A1
公开(公告)日：2012-07-19
申请号：US13427653
申请日：2012-03-22
申请人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
发明人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
IPC分类号： G03F1/76
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译：本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些）并且不具有与氮原子共价键合的氢原子作为碱性中心。

7. 发明申请

US20120183892A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
公开(公告)号：US20120183892A1
公开(公告)日：2012-07-19
申请号：US13427621
申请日：2012-03-22
申请人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
发明人： Satoshi WATANABE , Akinobu TANAKA , Takeru WATANABE , Takeshi KINSHO
IPC分类号： G03F1/76 , G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

8. 发明授权

US08202677B2 Chemically-amplified positive resist composition and patterning process thereof 有权
标题翻译：化学扩增的正型抗蚀剂组合物及其构图工艺
公开(公告)号：US08202677B2
公开(公告)日：2012-06-19
申请号：US12457327
申请日：2009-06-08
申请人： Takanobu Takeda , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi , Takeshi Kinsho
发明人： Takanobu Takeda , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/04 , G03F7/028 , G03F7/40
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译：公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱（B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。在通过光刻胶的光刻技术中，需要非常高的时间稳定性。另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

9. 发明申请

US20120142193A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用相同的底漆膜组合物和图案处理方法
公开(公告)号：US20120142193A1
公开(公告)日：2012-06-07
申请号：US13292696
申请日：2011-11-09
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
CPC分类号： G03F7/11 , G03F7/091 , G03F7/095
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和一种或多种由以下通式（2）表示的化合物和/或其等同体。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。

10. 发明申请

US20120045900A1 COMPOSITION FOR RESIST UNDERLAYER FILM, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND FULLERENE DERIVATIVE 有权
标题翻译：耐下层膜的组合物，形成电阻膜的方法，方法和全氟烷烃衍生物
公开(公告)号：US20120045900A1
公开(公告)日：2012-02-23
申请号：US13183175
申请日：2011-07-14
申请人： Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO , Tsutomu OGIHARA
发明人： Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO , Tsutomu OGIHARA
IPC分类号： H01L21/311 , C08F2/44 , C07C69/753 , C08L29/02 , C08L33/06 , C08L61/12 , H01L21/312 , C08L39/00
CPC分类号： H01L21/31144 , C07C69/753 , C07C2604/00 , G03F7/11 , H01L21/0271 , H01L21/31116
摘要： The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
摘要翻译：本发明提供了一种用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的组合物，用于形成用于光刻的多层抗蚀剂膜的抗蚀剂下层膜，其中所述组合物至少包含（A）富勒烯衍生物，其为反应产物具有富勒烯骨架的物质与具有吸电子基团的1,3-二烯化合物衍生物和（B）有机溶剂。可以使用用于光刻中的多层抗蚀剂膜的抗蚀剂下层膜的组合物，该组合物赋予抗蚀剂下层膜，其具有优异的耐干蚀刻性，能够高效地抑制基板蚀刻期间的扭曲，并且能够避免中毒使用化学增幅抗蚀剂的上层图案化问题; 形成抗蚀剂下层膜的工序; 图案化过程; 和富勒烯衍生物。

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