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1. 发明授权

US08795942B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08795942B2
公开(公告)日：2014-08-05
申请号：US12000284
申请日：2007-12-11
申请人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , G03F7/0045
摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
摘要翻译：公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。

2. 发明授权

US08741554B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US08741554B2
公开(公告)日：2014-06-03
申请号：US12787823
申请日：2010-05-26
申请人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
发明人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/38 , G03F7/40 , G03F7/20
CPC分类号： G03F7/70466 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , G03F7/40 , Y10S430/108 , Y10S430/111
摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译：通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

3. 发明授权

US08628908B2 Chemically amplified resist composition and patterning process 有权
标题翻译：化学扩增抗蚀剂组合物和图案化工艺
公开(公告)号：US08628908B2
公开(公告)日：2014-01-14
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译：提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。

4. 发明申请

US20130005997A1 PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM 有权
标题翻译： 2,2-BIS（氟烷基）氧化物的制备及其制备光电子发生器
公开(公告)号：US20130005997A1
公开(公告)日：2013-01-03
申请号：US13526569
申请日：2012-06-19
申请人： Masayoshi SAGEHASHI , Takeru WATANABE , Youichi OHSAWA , Koji HASEGAWA , Masaki OHASHI
发明人： Masayoshi SAGEHASHI , Takeru WATANABE , Youichi OHSAWA , Koji HASEGAWA , Masaki OHASHI
IPC分类号： C07C303/32 , C07D301/02
CPC分类号： C07D301/24 , C07C303/32 , C07C381/12 , C07C2603/74 , C07D303/08 , C07C309/08 , C07C309/12
摘要： A 2,2-bis(fluoroalkyl)oxirane (A) is prepared by reacting a fluorinated alcohol (1) with a chlorinating, brominating or sulfonylating agent under basic conditions to form an oxirane precursor (2) and subjecting the oxirane precursor to ring closure under basic conditions. R1 and R2 are fluoroalkyl groups, R3 and R4 are hydrogen or monovalent hydrocarbon groups, X is chlorine, bromine or —OSO2R5 group, and R5 is alkyl or aryl.
摘要翻译：通过在碱性条件下使氟化醇（1）与氯化，溴化或磺酰化剂反应以形成环氧乙烷前体（2）并使环氧乙烷前体环闭合来制备2,2-双（氟烷基）环氧乙烷（A）在基本条件下 R1和R2是氟烷基，R3和R4是氢或一价烃基，X是氯，溴或-OSO2R5基，R5是烷基或芳基。

5. 发明申请

US20120100486A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：硫酸盐，耐腐蚀组合物和方法
公开(公告)号：US20120100486A1
公开(公告)日：2012-04-26
申请号：US13243204
申请日：2011-09-23
申请人： Masayoshi Sagehashi , Youichi Ohsawa , Koji Hasegawa , Takeshi Kinsho , Tomohiro Kobayashi
发明人： Masayoshi Sagehashi , Youichi Ohsawa , Koji Hasegawa , Takeshi Kinsho , Tomohiro Kobayashi
IPC分类号： G03F7/20 , C07J33/00 , C07D333/46
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译：提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。

6. 发明授权

US08057985B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权
标题翻译：可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08057985B2
公开(公告)日：2011-11-15
申请号：US12549191
申请日：2009-08-27
申请人： Masaki Ohashi , Takeshi Kinsho , Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana
发明人： Masaki Ohashi , Takeshi Kinsho , Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C20 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译：提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C20有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。

7. 发明授权

US08039198B2 Sulfonium salt-containing polymer, resist composition, and patterning process 有权
标题翻译：含锍盐的聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08039198B2
公开(公告)日：2011-10-18
申请号：US12404245
申请日：2009-03-13
申请人： Seiichiro Tachibana , Jun Hatakeyama , Youichi Ohsawa , Masaki Ohashi
发明人： Seiichiro Tachibana , Jun Hatakeyama , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/111
摘要： A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.
摘要翻译：提供了包含由式（1）表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H，F，甲基或三氟甲基，R 2至R 4是C 1 -C 10烷基或烷氧基，R 5是C 1 -C 30烷基或C 6 -C 14芳基，k，m和n是0至3.重复单元产生磺酸暴露于高能量辐射下，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。

8. 发明申请

US20110212390A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：US20110212390A1
公开(公告)日：2011-09-01
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F1/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

9. 发明申请

US20110189607A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：新型磺酸盐，聚合物，聚合物的生产方法，耐腐蚀组合物和方法
公开(公告)号：US20110189607A1
公开(公告)日：2011-08-04
申请号：US13013506
申请日：2011-01-25
申请人： Masaki OHASHI , Satoshi WATANABE , Youichi OHSAWA , Keiichi MASUNAGA , Takeshi KINSHO
发明人： Masaki OHASHI , Satoshi WATANABE , Youichi OHSAWA , Keiichi MASUNAGA , Takeshi KINSHO
IPC分类号： G03F7/004 , G03F7/20 , C07C69/54 , C08F220/38
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译：公开了由以下通式（1）表示的锍盐。在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者，R 2和R 3可以相互结合，与式中的硫原子一起形成环。可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

10. 发明授权

US07919226B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
标题翻译：磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US07919226B2
公开(公告)日：2011-04-05
申请号：US12222645
申请日：2008-08-13
申请人： Youichi Ohsawa , Takeru Watanabe , Takeshi Kinsho , Katsuhiro Kobayashi
发明人： Youichi Ohsawa , Takeru Watanabe , Takeshi Kinsho , Katsuhiro Kobayashi
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： C07C309/12 , C07C381/12 , C07D307/64 , C07D307/68 , C07D333/46 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译：磺酸盐具有式：CF 3 -CH（OCOR）-CF 2 SO 3 -M +，其中R是C 1 -C 20烷基或C 6 -C 14芳基，M +是锂，钠，钾，铵或四甲基铵离子。鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。

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