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    • 1. 发明授权
    • Positive resist composition and patterning process
    • 正抗蚀剂组成和图案化工艺
    • US08795942B2
    • 2014-08-05
    • US12000284
    • 2007-12-11
    • Tomohiro KobayashiYouichi OhsawaRyosuke Taniguchi
    • Tomohiro KobayashiYouichi OhsawaRyosuke Taniguchi
    • G03F7/039G03F7/20G03F7/30G03F7/38
    • G03F7/0397G03F7/0045
    • There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
    • 公开了一种抗蚀剂组合物,其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率,并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含(A)包含由以下通式(1)表示的重复单元的树脂组分; (B)在暴露于高能量束时产生由以下通式(2)表示的磺酸的光酸产生剂; 和(C)鎓盐,其中阳离子是由以下通式(3)表示的锍或由以下通式(4)表示的铵; 并且阴离子由以下通式(5)至(7)中的任一个表示。