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1. 发明授权

US09677192B2 Group 3B nitride crystal substrate 有权
公开(公告)号：US09677192B2
公开(公告)日：2017-06-13
申请号：US13135829
申请日：2011-07-15
申请人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
发明人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
IPC分类号： C30B9/12 , C30B29/40
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406
摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

2. 发明申请

US20110274609A1 Group 3B nitride crystal substrate 有权
标题翻译： 3B族氮化物晶体基板
公开(公告)号：US20110274609A1
公开(公告)日：2011-11-10
申请号：US13135829
申请日：2011-07-15
申请人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
发明人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
IPC分类号： C01B21/06 , C30B19/04 , C30B19/02
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406
摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.
摘要翻译：根据本发明的13族氮化物晶体基板是通过利用通量法在种子晶体基板上生长13族氮化物晶体而制造的，其中在种籽晶的区域内生长的第13族氮化物晶体中的夹杂物的含量，除了晶种基板的圆周部分以外，晶种基板的面积分数相对于晶种基板的整个面积为70％的区域为10％以下，优选为2％以下。

3. 发明申请

US20110287222A1 Group 3B nitride crystal 审中-公开
标题翻译： 3B族氮化物晶体
公开(公告)号：US20110287222A1
公开(公告)日：2011-11-24
申请号：US13136056
申请日：2011-07-21
申请人： Takayuki Hirao , Makoto Iwai , Katsuhiro Imai
发明人： Takayuki Hirao , Makoto Iwai , Katsuhiro Imai
IPC分类号： C01B21/06 , B32B3/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , Y10T428/24355
摘要： A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.
摘要翻译：制备其上形成有氮化镓薄膜的表面上的蓝宝石衬底作为晶种衬底并置于生长容器中。称量镓和钠金属以达到25至32:68至75的摩尔比并加入容器中。将容器放入反应容器中。入口管连接到反应容器。从氮气罐通过压力控制器引入氮气以填充反应容器。当将反应容器的内部压力控制为预定的氮气压力并且设定目标温度使得下部加热器的温度高于上部加热器的温度时，生长氮化镓晶体。结果，提供了具有大晶粒尺寸和低位错密度的13族氮化物晶体。

4. 发明申请

US20100301358A1 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor 有权
标题翻译：半导体基板，电子器件，光学器件及其制造方法
公开(公告)号：US20100301358A1
公开(公告)日：2010-12-02
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L29/20 , C30B9/12 , H01L29/772 , H01L33/30 , H01L31/0304 , H01L21/20
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

5. 发明申请

US20090294909A1 N-type group III nitride-based compound semiconductor and production method therefor 有权
标题翻译： N型III族氮化物系化合物半导体及其制造方法
公开(公告)号：US20090294909A1
公开(公告)日：2009-12-03
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
摘要翻译：本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。在该方法中，将碳和锗溶解在熔体中，并将锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

6. 发明授权

US07459023B2 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US07459023B2
公开(公告)日：2008-12-02
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B25/12
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

7. 发明授权

US08084281B2 Semiconductor substrate, electronic device, optical device, and production methods therefor 有权
标题翻译：半导体衬底，电子器件，光学器件及其制造方法
公开(公告)号：US08084281B2
公开(公告)日：2011-12-27
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/00
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

8. 发明申请

US20080011224A1 METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL 有权
标题翻译：生产六角形硼酸单晶和六面体硼砂单晶的方法
公开(公告)号：US20080011224A1
公开(公告)日：2008-01-17
申请号：US11837557
申请日：2007-08-13
申请人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
发明人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C30B29/38 , C30B1/00 , C30B23/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12
摘要： An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and calcium series material in atmosphere containing nitrogen. Bulk of hexagonal boron nitride single crystal can thereby successfully be grown.
摘要翻译：本发明的目的是提供一种生长六方氮化硼单晶的新方法。发现六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。从而能够成功生长六方晶系氮化硼单晶体。

9. 发明申请

US20070209575A1 Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal 有权
标题翻译：氮化镓单晶生长法和氮化镓单晶
公开(公告)号：US20070209575A1
公开(公告)日：2007-09-13
申请号：US10594846
申请日：2005-03-30
申请人： Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
发明人： Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
IPC分类号： C30B9/00 , C30B17/00
CPC分类号： C30B9/10 , C30B29/406
摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.
摘要翻译：提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。使用至少含有金属钠的焊剂8生长氮化镓单晶。氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。优选地，大气中的氮分压为100atms以上且2000atms以下。优选地，生长温度为1000℃以上且1500℃以下。

10. 发明申请

US20060120415A1 Blue laser beam oscillating method and system 审中-公开
标题翻译：蓝色激光束振荡方法和系统
公开(公告)号：US20060120415A1
公开(公告)日：2006-06-08
申请号：US11329019
申请日：2006-01-10
申请人： Makoto Iwai , Katsuhiro Imai , Takashi Yoshino , Minoru Imaeda
发明人： Makoto Iwai , Katsuhiro Imai , Takashi Yoshino , Minoru Imaeda
IPC分类号： H01S3/10
CPC分类号： G02F1/377 , G02F2202/20
摘要： It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.
摘要翻译：提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法，并且可以提高蓝色激光束的输出功率。从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。蓝色激光束“B”从平板光波导8发射。

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