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1. 发明授权

US07459023B2 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US07459023B2
公开(公告)日：2008-12-02
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B25/12
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

2. 发明申请

US20070101931A1 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US20070101931A1
公开(公告)日：2007-05-10
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

3. 发明授权

US07288151B2 Method of manufacturing group-III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法
公开(公告)号：US07288151B2
公开(公告)日：2007-10-30
申请号：US10999338
申请日：2004-11-29
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
IPC分类号： C30B11/14
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
摘要翻译：提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中熔体的表面和基板的表面设定为至多50mm。

4. 发明申请

US20080283968A1 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 有权
标题翻译： III-氮化物半导体晶体及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20080283968A1
公开(公告)日：2008-11-20
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： H01L29/20 , C03B9/00
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

5. 发明申请

US20080022921A1 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
标题翻译：第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件
公开(公告)号：US20080022921A1
公开(公告)日：2008-01-31
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/06 , C30B9/10 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

6. 发明申请

US20100059717A1 GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS 有权
标题翻译： GaN晶体生产方法，GaN晶体，GaN晶体衬底，半导体器件和GaN晶体生产设备
公开(公告)号：US20100059717A1
公开(公告)日：2010-03-11
申请号：US12514836
申请日：2007-11-14
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
IPC分类号： C30B9/00 , C01B21/06 , H01B1/24
CPC分类号： C30B29/406 , C30B19/02 , Y10T117/1024
摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.
摘要翻译：提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序互相反应。根据本发明的制造方法，能够防止成核，如图1所示，如图4所示，可以生长非极性表面。

7. 发明授权

US07507292B2 Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby 失效
标题翻译：由此制备III族元素氮化物单晶和III族元素氮化物透明单晶的方法
公开(公告)号：US07507292B2
公开(公告)日：2009-03-24
申请号：US10522488
申请日：2003-06-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Kunimichi Omae , Tomoya Iwahashi , Masanori Morishita
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Kunimichi Omae , Tomoya Iwahashi , Masanori Morishita
IPC分类号： C30B11/06
CPC分类号： C30B19/02 , C30B9/10 , C30B9/12 , C30B29/403
摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.
摘要翻译：一种III族元素氮化物单晶的制造方法，其特征在于，在混合助熔剂中使至少一种选自镓（Ga），铝（Al）和铟（In）的III族元素与氮（N）的钠（Na）和至少一种碱金属（除了Na）和碱土金属之外。该方法允许以良好的产率生产透明的III族元素氮化物的单晶，其位错密度降低，具有散装形式，并且大。特别地，通过该方法制造的氮化镓单晶具有高质量并且具有大而透明的散装形式，因此具有很高的实用价值。

8. 发明申请

US20070296061A1 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 审中-公开
标题翻译： III族氮化物晶体基板及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20070296061A1
公开(公告)日：2007-12-27
申请号：US11578242
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
IPC分类号： H01L29/20 , C03B17/00
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

9. 发明授权

US08187507B2 GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus 有权
标题翻译： GaN晶体制造方法，GaN晶体，GaN晶体衬底，半导体器件和GaN晶体制造装置
公开(公告)号：US08187507B2
公开(公告)日：2012-05-29
申请号：US12514836
申请日：2007-11-14
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
IPC分类号： H01B1/06 , C01G15/00
CPC分类号： C30B29/406 , C30B19/02 , Y10T117/1024
摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.
摘要翻译：提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序互相反应。根据本发明的制造方法，能够防止成核，如图1所示，如图4所示，可以生长非极性表面。

10. 发明授权

US08038794B2 Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device 有权
标题翻译： III族氮化物晶体，其制造方法，III族氮化物晶体衬底和半导体器件
公开(公告)号：US08038794B2
公开(公告)日：2011-10-18
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

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