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1. 发明授权

US08009392B2 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US08009392B2
公开(公告)日：2011-08-30
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

2. 发明申请

US20100177440A1 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US20100177440A1
公开(公告)日：2010-07-15
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/127 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

3. 发明授权

US08213272B2 Multilayered waveguide having protruded light-emitting end 有权
标题翻译：具有突出发光端的多层波导
公开(公告)号：US08213272B2
公开(公告)日：2012-07-03
申请号：US12482851
申请日：2009-06-11
申请人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
发明人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B11/00
CPC分类号： G02B6/1228 , G02B2006/12078 , G11B5/3133 , G11B5/6088 , G11B2005/0005 , G11B2005/0021
摘要： A waveguide is provided, in which the optical coupling efficiency to a light source is sufficiently high, and the light-emitting spot center is stably provided at the intended position. The waveguide comprises a multilayered structure in which refractive indexes of layers having a surface contact with each other are different from each other. The multilayered structure is divided into a plurality of groups, and the length from the light-receiving end surface to the light-emitting end surface of one group is different from that of the neighboring group, and the protruded light-emitting end surface of the first group defined as a group that has the largest length includes a center of the light-emitting spot. In this waveguide, the state in which the light-emitting spot center is positioned within the light-emitting end surface does not easily be changed, even when the light-receiving spot center within the light-receiving end surface is rather displaced.
摘要翻译：提供了一种波导，其中对光源的光耦合效率足够高，并且发光光点中心稳定地设置在预期位置。波导包括彼此具有表面接触的层的折射率彼此不同的多层结构。多层结构被分成多个组，从一个组的受光端面到发光端面的长度不同于相邻组的发光端面的突出的发光端面被定义为具有最大长度的组的第一组包括发光点的中心。在该波导中，发光光点中心位于发光端面内的状态也不容易改变，即使光接收端面内的光接收点中心相当偏离。

4. 发明申请

US20100315736A1 Multilayered Waveguide Having Protruded Light-Emitting End 有权
标题翻译：具有突出发光端的多层波导
公开(公告)号：US20100315736A1
公开(公告)日：2010-12-16
申请号：US12482851
申请日：2009-06-11
申请人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
发明人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/02 , G02B6/10
CPC分类号： G02B6/1228 , G02B2006/12078 , G11B5/3133 , G11B5/6088 , G11B2005/0005 , G11B2005/0021
摘要： A waveguide is provided, in which the optical coupling efficiency to a light source is sufficiently high, and the light-emitting spot center is stably provided at the intended position. The waveguide comprises a multilayered structure in which refractive indexes of layers having a surface contact with each other are different from each other. The multilayered structure is divided into a plurality of groups, and the length from the light-receiving end surface to the light-emitting end surface of one group is different from that of the neighboring group, and the protruded light-emitting end surface of the first group defined as a group that has the largest length includes a center of the light-emitting spot. In this waveguide, the state in which the light-emitting spot center is positioned within the light-emitting end surface does not easily be changed, even when the light-receiving spot center within the light-receiving end surface is rather displaced.
摘要翻译：提供了一种波导，其中对光源的光耦合效率足够高，并且发光光点中心稳定地设置在预期位置。波导包括彼此具有表面接触的层的折射率彼此不同的多层结构。多层结构被分成多个组，从一个组的受光端面到发光端面的长度不同于相邻组的发光端面的突出的发光端面被定义为具有最大长度的组的第一组包括发光点的中心。在该波导中，发光光点中心位于发光端面内的状态也不容易改变，即使光接收端面内的光接收点中心相当偏离。

5. 发明授权

US07947188B2 Method for manufacturing CPP-type magnetoresistance effect element 有权
标题翻译： CPP型磁阻效应元件的制造方法
公开(公告)号：US07947188B2
公开(公告)日：2011-05-24
申请号：US12318481
申请日：2008-12-30
申请人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/3929
摘要： A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.
摘要翻译：制造薄膜磁头的方法包括形成MR层叠体的步骤; 用于形成由通过湿蚀刻除去的材料制成的第一牺牲层的步骤，随后在所述第一牺牲层的上表面上形成盖层; 另外，用于对MR层叠体和盖层进行图案化，然后用偏磁层填充MR层状体和盖层的去除区域的一部分，剩余的具有绝缘层的步骤; 通过干蚀刻去除盖层的步骤，随后通过湿法蚀刻去除第一牺牲层; 以及在MR层叠体和偏磁层上形成第二屏蔽层的工序。

6. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

7. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

8. 发明申请

US20090190270A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090190270A1
公开(公告)日：2009-07-30
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

9. 发明授权

US07881021B2 CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same 有权
标题翻译：具有用于具有彼此正交的相应磁化的铁磁层的偏置装置的CPP型磁阻器件，以及使用它们的磁盘系统
公开(公告)号：US07881021B2
公开(公告)日：2011-02-01
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.
摘要翻译：一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

10. 发明授权

US07855859B2 Magnetoresistive element and magnetic head 有权
标题翻译：磁阻元件和磁头
公开(公告)号：US07855859B2
公开(公告)日：2010-12-21
申请号：US12005273
申请日：2007-12-27
申请人： Shinji Hara , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Tsuyoshi Ichiki , Toshiyuki Ayukawa
发明人： Shinji Hara , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Tsuyoshi Ichiki , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08
摘要： In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.
摘要翻译：在MR元件中，第一和第二铁磁层通过间隔层彼此反铁磁耦合，并且当不施加外部磁场并且响应于外部磁场改变方向时，具有相反方向的磁化。间隔层和第二铁磁层依次堆叠在第一铁磁层上。第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层，并且插入在彼此相邻的两个铁磁材料层之间，沿堆叠层的方向相邻。铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。

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