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1. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

2. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

3. 发明申请

US20090190270A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090190270A1
公开(公告)日：2009-07-30
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

4. 发明授权

US07947188B2 Method for manufacturing CPP-type magnetoresistance effect element 有权
标题翻译： CPP型磁阻效应元件的制造方法
公开(公告)号：US07947188B2
公开(公告)日：2011-05-24
申请号：US12318481
申请日：2008-12-30
申请人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/3929
摘要： A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.
摘要翻译：制造薄膜磁头的方法包括形成MR层叠体的步骤; 用于形成由通过湿蚀刻除去的材料制成的第一牺牲层的步骤，随后在所述第一牺牲层的上表面上形成盖层; 另外，用于对MR层叠体和盖层进行图案化，然后用偏磁层填充MR层状体和盖层的去除区域的一部分，剩余的具有绝缘层的步骤; 通过干蚀刻去除盖层的步骤，随后通过湿法蚀刻去除第一牺牲层; 以及在MR层叠体和偏磁层上形成第二屏蔽层的工序。

5. 发明授权

US07881021B2 CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same 有权
标题翻译：具有用于具有彼此正交的相应磁化的铁磁层的偏置装置的CPP型磁阻器件，以及使用它们的磁盘系统
公开(公告)号：US07881021B2
公开(公告)日：2011-02-01
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.
摘要翻译：一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

6. 发明申请

US20090290264A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
公开(公告)号：US20090290264A1
公开(公告)日：2009-11-26
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.

7. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

8. 发明申请

US20100163519A1 Method for manufacturing CPP-type magnetoresistance effect element 有权
标题翻译： CPP型磁阻效应元件的制造方法
公开(公告)号：US20100163519A1
公开(公告)日：2010-07-01
申请号：US12318481
申请日：2008-12-30
申请人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/3929
摘要： A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.
摘要翻译：制造薄膜磁头的方法包括形成MR层叠体的步骤; 用于形成由通过湿蚀刻除去的材料制成的第一牺牲层的步骤，随后在所述第一牺牲层的上表面上形成盖层; 另外，用于对MR层叠体和盖层进行图案化，然后用偏磁层填充MR层状体和盖层的去除区域的一部分，剩余的具有绝缘层的步骤; 通过干蚀刻去除盖层的步骤，随后通过湿法蚀刻去除第一牺牲层; 以及在MR层叠体和偏磁层上形成第二屏蔽层的工序。

9. 发明申请

US20090303640A1 MAGNETO-RESISTANCE EFFECT ELEMENT PROVIDED WITH CURRENT LIMITING LAYER INCLUDING MAGNETIC MATERIAL 审中-公开
标题翻译：具有电流限制层的磁阻效应元件，包括磁性材料
公开(公告)号：US20090303640A1
公开(公告)日：2009-12-10
申请号：US12109651
申请日：2008-04-25
申请人： Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa , Toshiyuki Ayukawa , Tsuyoshi Ichiki
发明人： Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa , Toshiyuki Ayukawa , Tsuyoshi Ichiki
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.
摘要翻译：磁阻效应元件包括介于第一和第二磁性层之间的第一磁性层，第二磁性层和间隔层。磁阻效应元件被配置为允许感测电流在垂直于第一磁性层，第二磁性层和间隔层的膜平面的方向上流动，使得第一磁性层的磁化方向并且第二磁性层的磁化方向根据外部磁场而变化。本发明旨在提供一种确保对感应电流的高电阻的磁阻效应元件，同时限制限流层对磁性层的影响，从而实现高的磁阻比。

10. 发明申请

US20100103562A1 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US20100103562A1
公开(公告)日：2010-04-29
申请号：US12289401
申请日：2008-10-27
申请人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
发明人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.
摘要翻译：磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。两个磁通导向层中的每一个具有前端面和后端面。偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

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