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    • 10. 发明授权
    • Near-field light generating element and method for forming the element
    • 近场光产生元件及其形成方法
    • US08223611B2
    • 2012-07-17
    • US12328232
    • 2008-12-04
    • Kosuke TanakaSeiichi TakayamaSatoshi Tomikawa
    • Kosuke TanakaSeiichi TakayamaSatoshi Tomikawa
    • G11B7/00G11B7/135
    • G11B5/3163G11B5/314G11B5/6088G11B2005/0005G11B2005/0021
    • Provided is a method for forming a near-field light generating element, which is capable of sufficiently suppressing the unevenness of a waveguide surface and the distortion within the waveguide. The forming method comprises the steps of: forming a first etching stopper layer on a lower waveguide layer; forming a second etching stopper layer; forming, on the second etching stopper layer, a plasmon antenna material layer; performing etching with the second etching stopper layer used as a stopper, to form a first side surface of plasmon antenna; forming a side-surface protecting mask so as to cover the first side surface; and performing etching with the first and second etching stopper layers used as stoppers, to form the second side surface. By providing the first and second etching stopper layer, over-etching can be prevented even when each etching process takes enough etch time, which allows easy management of etching endpoints.
    • 本发明提供一种形成近场光产生元件的方法,其能够充分地抑制波导表面的不均匀性和波导内的变形。 成形方法包括以下步骤:在下波导层上形成第一蚀刻阻挡层; 形成第二蚀刻停止层; 在第二蚀刻停止层上形成等离子体激元天线材料层; 用作为阻挡件的第二蚀刻阻挡层进行蚀刻,以形成等离子体激元的第一侧表面; 形成侧面保护罩以覆盖第一侧面; 并且利用用作塞子的第一和第二蚀刻阻挡层进行蚀刻,以形成第二侧表面。 通过设置第一和第二蚀刻停止层,即使每个蚀刻工艺都需要足够的蚀刻时间,也可以防止过蚀刻,这允许蚀刻端点的容易管理。