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    • 1. 发明授权
    • Phase-locked semiconductor laser device
    • 锁相半导体激光器件
    • US4503540A
    • 1985-03-05
    • US368150
    • 1982-04-14
    • Hisao NakashimaJun-ichi UmedaTakao KurodaTakashi KajimuraHiroshi Matsuda
    • Hisao NakashimaJun-ichi UmedaTakao KurodaTakashi KajimuraHiroshi Matsuda
    • H01S5/00H01S5/042H01S5/22H01S5/227H01S5/40H01S3/19
    • H01S5/2203H01S5/4043H01S5/0424H01S5/2275
    • A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be sandwiched between second semiconductor layers having a band gap wider, and a refractive index lower, than those of said first semiconductor layers; a third semiconductor layer which is disposed in contact with at least one of side faces of said laminated structure parallel to a traveling direction of a laser beam, which is not narrower in the band gap and not higher in the refractive index than said first semiconductor layers and which does not have the same conductivity type as, at least, that of said first semiconductor layers; means to inject current into an interface between said first semiconductor layers and said third semiconductor layer disposed on the side face of said laminated structure; and means to act as an optical resonator for the laser beam.
    • 一种锁相半导体激光器件,包括层叠结构,其中具有基本上相同组成的多个第一半导体层以夹在带隙较宽的第二半导体层和折射率较低的第二半导体层之间的方式堆叠 的所述第一半导体层; 第三半导体层,其与所述层叠结构的至少一个侧面平行设置成与激光束的行进方向平行,所述激光束的带隙不窄,折射率不高于所述第一半导体层 并且其不具有至少与所述第一半导体层的导电类型相同的导电类型; 用于将电流注入到所述第一半导体层和设置在所述层叠结构的侧面上的所述第三半导体层之间的界面中的装置; 以及用作激光束的光学谐振器的装置。
    • 2. 发明授权
    • Phase-locked semiconductor laser device
    • 锁相半导体激光器件
    • US4509173A
    • 1985-04-02
    • US366324
    • 1982-04-07
    • Jun-ichi UmedaHisao NakashimaTakashi KajimuraTakao Kuroda
    • Jun-ichi UmedaHisao NakashimaTakashi KajimuraTakao Kuroda
    • H01S5/00H01S5/40H01S3/19
    • H01S5/4068
    • A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.
    • 半导体激光装置设置有半导体基板和至少一个形成在基板上的用于光学限制的半导体组件,该半导体组件包括有源层和包层。 第一电极设置在半导体组件上,第二电极设置在半导体衬底上。 为了提供高质量的锁相半导体激光器件,在半导体组件中设置多个区域,其实际上导致激光束在与行进方向相交的方向上的复合折射率的变化 激光束。 这些区域可以离散地设置在有源层上或下方,并产生由多个区域形成的相邻激光发射区域之间的非线性相互作用。
    • 3. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4426703A
    • 1984-01-17
    • US272039
    • 1981-06-09
    • Takao KurodaTakashi KajimuraJun-ichi UmedaKatsutoshi Saito
    • Takao KurodaTakashi KajimuraJun-ichi UmedaKatsutoshi Saito
    • H01S5/00H01S5/20H01S5/223H01S3/19
    • H01S5/20H01S5/2231H01S5/2059
    • In a semiconductor laser device wherein a stripe-shaped impurity-diffused region is disposed in at least parts of semiconductor layers of from a surface semiconductor layer of a semiconductor layer assembly constituting the semiconductor laser device to a second semiconductor layer lying in contact with a first semiconductor layer having an active region, the impurity-diffused region having the same conductivity type as that of the second semiconductor layer and extending at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path; a semiconductor laser device characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.
    • 在半导体激光器件中,其中条形杂质扩散区域设置在从构成半导体激光器件的半导体层组件的表面半导体层的半导体层的至少部分到与第一 具有有源区的半导体层,杂质扩散区具有与第二半导体层相同的导电类型并且至少从表面半导体层延伸到与第一半导体层相邻的深度,杂质区用作电流 路径; 一种半导体激光器件,其特征在于,在所述表面半导体层和所述第二半导体层之间设置有其中用于形成所述杂质扩散区域的杂质的扩散速率低于所述第二半导体层的第三半导体层 。
    • 4. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4432091A
    • 1984-02-14
    • US342357
    • 1982-01-25
    • Takao KurodaTakashi KajimuraYasutoshi KashiwadaNaoki ChinoneKunio AikiJun-ichi Umeda
    • Takao KurodaTakashi KajimuraYasutoshi KashiwadaNaoki ChinoneKunio AikiJun-ichi Umeda
    • H01L21/208H01S5/00H01S5/10H01S3/19
    • H01S5/10
    • In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
    • 在具有至少第一半导体层的半导体激光器件中,以夹着第一半导体层的方式形成并且具有比第一半导体层的折射率更宽的带隙和更低折射率的第二和第三半导体层, 光学谐振器和载体注入装置; 一种半导体激光器件,其特征在于,至少所述第一半导体层相对于垂直于构成所述光谐振器的光学平面的轴线具有倾斜角(θ)。 倾斜角度θ(rad)应最优选在以下范围内:θz表示反射角,θc临界角,波导厚度的W 1/2,以及l腔长度。 激光装置有效防止激光刻面破碎,并能产生高功率。
    • 6. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4257011A
    • 1981-03-17
    • US929013
    • 1978-07-28
    • Michiharu NakamuraShigeo YamashitaTakao KurodaJun-ichi Umeda
    • Michiharu NakamuraShigeo YamashitaTakao KurodaJun-ichi Umeda
    • H01S5/12H01S5/223H01S3/19
    • H01S5/12H01S5/2232H01S5/2234
    • A semiconductor laser device has stabilized longitudinal and transverse modes without excess optical noise for a modulated signal generated by mode interaction. The fundamental construction of the semiconductor laser device comprises a structure wherein a first semiconductor layer is sandwiched between second and third semiconductor layers which have a greater band gap and lower index of refraction than the first semiconductor layer. That region of at least one of the second and third semiconductor layers which is remote from the first semiconductor layer corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semiconductor layer and has an effective complex refractive-index for laser light discontinuous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which intersect orthogonally to the lengthwise direction of the stripe-shaped light non-absorptive region are formed in at least one interface of the semiconductor layers in a manner to include at least a region corresponding to the light non-absorptive region.
    • 半导体激光器件对于通过模式相互作用产生的调制信号具有稳定的纵向和横向模式而没有过多的光学噪声。 半导体激光器件的基本结构包括其中第一半导体层夹在具有比第一半导体层更大的带隙和较低的折射率的第二和第三半导体层之间的结构。 远离第一半导体层的第二和第三半导体层中的至少一个的区域基本上对应于辐射区域,并且用作条纹形状的光非吸收区域。 半导体层具有位于远离第一半导体层的半导体层的两侧的部分,并且对于远离第一半导体层的半导体层的两端处的不连续的激光具有有效的复合折射率。 以至少包括对应于光非吸收区域的区域的方式,在半导体层的至少一个界面中形成与条形光非吸收区域的长度方向垂直相交的周期波纹。
    • 9. 发明申请
    • Semiconductor Device And Method For Manufacturing Same
    • 半导体器件及其制造方法相同
    • US20080012048A1
    • 2008-01-17
    • US11570658
    • 2005-12-14
    • Takao Kuroda
    • Takao Kuroda
    • H01L27/148H01L21/339H01L29/76
    • H01L27/14689H01L27/14806H01L29/76833
    • In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.
    • 在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中,具有第一导电类型的第一半导体区域4,导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。 第二半导体区域5形成在第一半导体区域4上。 第三半导体区域6形成在第二半导体区域5上,使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深 半导体区域6不存在。
    • 10. 发明申请
    • Solid state imaging device, method for driving the same and camera using the same
    • 固态成像装置,其驱动方法及使用其的相机
    • US20060119725A1
    • 2006-06-08
    • US11332885
    • 2006-01-17
    • Takao KurodaSei SuzukiKidera Akito
    • Takao KurodaSei SuzukiKidera Akito
    • H04N5/335
    • H04N5/3728H04N5/357H04N5/3597
    • In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.
    • 在使固态成像装置更小并且其像素数量增加的情况下,期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点,但是这导致半导体衬底中的电场太强,并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1(t = t 2 2)时施加向读出信号电荷的电极43施加的高电压,放松了转印区域中的潜在步骤, 低电压至至少一个电极41,45-47,用于防止信号电荷的不必要的混合,以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压, 施加高电压。