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1. 发明授权

US4950624A Method of depositing films using photo-CVD with chamber plasma cleaning 失效
标题翻译：使用室温等离子体清洗的光CVD法沉积膜的方法
公开(公告)号：US4950624A
公开(公告)日：1990-08-21
申请号：US194206
申请日：1988-05-16
申请人： Takashi Inuzima , Shigenori Hayashi , Toru Takayama , Seiichi Odaka , Naoki Hirose
发明人： Takashi Inuzima , Shigenori Hayashi , Toru Takayama , Seiichi Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light source for photo CVD or a pair of electrode for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light or plasma evenly throughout the surfaces to be coated.

2. 发明授权

US5855970A Method of forming a film on a substrate 失效
标题翻译：在基材上形成膜的方法
公开(公告)号：US5855970A
公开(公告)日：1999-01-05
申请号：US769115
申请日：1996-12-18
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316 , H05H1/24
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/487 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

3. 发明授权

US5427824A CVD apparatus 失效
公开(公告)号：US5427824A
公开(公告)日：1995-06-27
申请号：US971242
申请日：1992-09-08
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316 , H01L21/00
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/487 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.

4. 发明授权

US06520189B1 CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US06520189B1
公开(公告)日：2003-02-18
申请号：US09398059
申请日：1999-09-17
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： B08B312
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

5. 发明授权

US6013338A CVD apparatus 失效
公开(公告)号：US6013338A
公开(公告)日：2000-01-11
申请号：US188382
申请日：1998-11-10
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316 , H05H1/24
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.

6. 发明授权

US5629245A Method for forming a multi-layer planarization structure 失效
标题翻译：形成多层平坦化结构的方法
公开(公告)号：US5629245A
公开(公告)日：1997-05-13
申请号：US376736
申请日：1995-01-23
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316 , H01L21/20
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/487 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

7. 发明授权

US06423383B1 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06423383B1
公开(公告)日：2002-07-23
申请号：US09196141
申请日：1998-11-20
申请人： Naoki Hirose , Takashi Inujima , Toru Takayama
发明人： Naoki Hirose , Takashi Inujima , Toru Takayama
IPC分类号： H05H124
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32623 , H01J37/32678 , Y10S427/104
摘要： A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.
摘要翻译：等离子体处理装置和方法配备有反应室，用于在反应室内产生微波的微波发生器，以及用于产生与微波传播方向平行的磁场的主磁辅助磁铁。辅助磁体位于反应室的壁上，以加强反应室周围的磁场。将含有碳化合物气体的反应性气体引入室中，其中通过使用微波和磁场的共振将反应气体转化为等离子体。辅助磁体的存在在反应室内产生离心漂移力，从而将等离子体气体限制在室的中心。然后将衬底放置在室内，并且其上沉积包含无定形碳的膜。

8. 发明授权

US06217661B1 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06217661B1
公开(公告)日：2001-04-17
申请号：US09196744
申请日：1998-11-20
申请人： Naoki Hirose , Takashi Inujima , Toru Takayama
发明人： Naoki Hirose , Takashi Inujima , Toru Takayama
IPC分类号： C23C1600
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32623 , H01J37/32678 , Y10S427/104
摘要： A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.
摘要翻译：等离子体处理装置和方法配备有真空室，亥姆霍兹线圈，微波发生器和气体供给系统。进一步提供辅助磁体以加强真空室中的磁场，以产生围绕真空室的中心位置限制等离子体气体的离心漂移力。

9. 发明授权

US5302226A Apparatus for microwave processing in a magnetic field 失效
标题翻译：磁场微波处理装置
公开(公告)号：US5302226A
公开(公告)日：1994-04-12
申请号：US892710
申请日：1992-05-29
申请人： Shunpei Yamazaki , Naoki Hirose , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
发明人： Shunpei Yamazaki , Naoki Hirose , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32449 , H01J37/32192 , H01J37/3244
摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
摘要翻译：微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。

10. 发明授权

US5203959A Microwave plasma etching and deposition method employing first and second magnetic fields 失效
标题翻译：采用第一和第二磁场的微波等离子体蚀刻和沉积方法
公开(公告)号：US5203959A
公开(公告)日：1993-04-20
申请号：US766283
申请日：1991-09-27
申请人： Naoki Hirose , Takashi Inujima , Toru Takayama
发明人： Naoki Hirose , Takashi Inujima , Toru Takayama
IPC分类号： C23C16/511 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32623 , H01J37/32678
摘要： A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.
摘要翻译：等离子体处理装置和方法配备有真空室，赫尔兹兹线圈，Ioffe棒，微波发生器和气体供给系统。进一步提供辅助磁体以加强真空室中的磁场，以产生围绕真空室的中心位置限制等离子体气体的离心漂移力。具体地，该方法包括在真空室中建立基本上平行于在室中发射的微波的传播方向的第一磁场，并建立基本上垂直于第一磁场的第二磁场。放置用于等离子体处理的室中的衬底，使得衬底的表面基本上垂直于第一磁场的方向并且平行于第二磁场的方向。

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