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1. 发明授权

US4819036A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4819036A
公开(公告)日：1989-04-04
申请号：US60869
申请日：1987-05-04
申请人： Takao Kuroda , Akiyoshi Watanabe , Shinji Tsuji , Akio Ohishi , Hiroyoshi Matsumura
发明人： Takao Kuroda , Akiyoshi Watanabe , Shinji Tsuji , Akio Ohishi , Hiroyoshi Matsumura
IPC分类号： H01S5/00 , B82Y20/00 , H01L29/15 , H01L29/80 , H01L31/10 , H01S5/34 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/343 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/34366
摘要： A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III.sup.1 -V.sup.1 ") binary crystal layer which lattice-matches with the substrate, and a III-V group (III.sup.1 -III.sup.2 -V.sup.2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III.sup.1 -V.sup.1) crystal and the film thickness of the (III.sup.1 -III.sup.2 -V.sup.2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.
摘要翻译： PCT No.PCT / JP86 / 00443 Sec。 371日期：1987年5月4日 102（e）日期1987年5月4日PCT提交1986年8月29日PCT公布。第WO87 / 015222B号公开日期：1987年3月12日。一种使III-V族晶体易于在III-V族晶体上形成的新方法，使得前一晶格与后一晶体匹配。更具体地说，容易在III-V族晶体基板上产生超晶格结构，超晶格结构由与第一III-V族（以下称为“III1-V1”）二元晶体层基板和与基板类似地匹配的III-V族（III1-III2-V2）三元晶体层。通过选择（III1-V1）晶体的膜厚与（III1-III2-V2）晶体的膜厚之间的比例，可以获得更稳定的超晶格层，使得当超晶格结构混合时自发结晶或通过杂质掺杂，混合结晶的组合物与先前的晶体匹配。

2. 发明授权

US4905057A Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：US4905057A
公开(公告)日：1990-02-27
申请号：US325123
申请日：1989-03-17
申请人： Akio Ohishi , Takao Kuroda , Shinji Tsuji , Motohisa Hirao , Hiroyoshi Matsumura
发明人： Akio Ohishi , Takao Kuroda , Shinji Tsuji , Motohisa Hirao , Hiroyoshi Matsumura
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.
摘要翻译：通过在掩埋层中并入pnp或npn结，可以获得阈值电流和漏电流小的半导体激光器件或晶体管，其阈值电流和漏电流不随时间增加，包含InGaAsP的有源区，用InGaAsP形成接合的中间层，用注入离子调节中间层的导电类型，并指定构成中间层的半导体的能带宽度。

3. 发明授权

US5340637A Optical device diffraction gratings and a photomask for use in the same 失效
$Optical device diffraction gratings and a photomask for use in the same$
标题翻译：光学器件衍射光栅和用于其中的光掩模
公开(公告)号：US5340637A
公开(公告)日：1994-08-23
申请号：US895430
申请日：1992-06-05
申请人： Makoto Okai , Shinji Tsuji , Akio Ohishi , Motohisa Hirao , Hiroyoshi Matsumura , Tatsuo Harada , Toshiaki Kita , Hideki Taira
发明人： Makoto Okai , Shinji Tsuji , Akio Ohishi , Motohisa Hirao , Hiroyoshi Matsumura , Tatsuo Harada , Toshiaki Kita , Hideki Taira
IPC分类号： G02B5/18 , G03F1/00 , B32B3/28 , G02B27/42 , G03C5/00
CPC分类号： G02B5/1857 , Y10T428/2457 , Y10T428/24612 , Y10T428/24942
摘要： A method of fabricating diffraction gratings wherein a photomask is arranged on a substrate which is coated with a photoresist, light is to be incident thereupon at an acute angle relative to the normal direction of the photomask, and a bright/dark pattern is formed on said photoresist by the interference of the transmission light that has passed through the photomask and the diffraction light. The invention further deals with a photomask used for the above method.
摘要翻译：一种制造衍射光栅的方法，其中光掩模布置在涂覆有光致抗蚀剂的基底上，光将相对于光掩模的法线方向以锐角入射到其上，并且在所述光掩模上形成明暗图案通过透过光掩模的透射光的干涉和衍射光的光致抗蚀剂。本发明还涉及用于上述方法的光掩模。

4. 发明授权

US4835581A Electron gas hole gas tunneling transistor device 失效
标题翻译：电子气孔气体隧道晶体管器件
公开(公告)号：US4835581A
公开(公告)日：1989-05-30
申请号：US76765
申请日：1987-07-23
申请人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
发明人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
IPC分类号： H01L29/205 , H01L21/338 , H01L29/10 , H01L29/739 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7783 , H01L29/1025 , H01L29/7391
摘要： Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.
摘要翻译：公开了一种半导体器件，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的第三半导体层，并且其带隙比第一和第二半导体层使得三层的导带和价带中的频带不连续性形成对第三半导体层的阻挡，并且由于第三半导体层的内部电场，隧道电流可以流过第三半导体层。

5. 发明授权

US4814838A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4814838A
公开(公告)日：1989-03-21
申请号：US56657
申请日：1987-06-02
申请人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
发明人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
IPC分类号： H01L21/20 , H01L21/203 , H01L21/338 , H01L29/205 , H01L29/36 , H01L29/43 , H01L29/812 , H01L29/80
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L29/365 , H01L29/432
摘要： A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed.Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.
摘要翻译：公开了具有不等晶格常数的两种化合物半导体的半导体器件。通过使化合物半导体之一与杂质进行原子层掺杂来避免由晶格失配引起的位错等缺陷。由于这种结构，允许将最佳材料作为复合半导体组合，并且半导体器件具有其性能改进并且其设计多功能性扩大。

6. 发明授权

US4766092A Method of growing heteroepitaxial InP on Si using Sn substrate implantation 失效
标题翻译：使用Sn衬底植入在Si上生长异质外延InP的方法
公开(公告)号：US4766092A
公开(公告)日：1988-08-23
申请号：US937019
申请日：1986-12-02
申请人： Takao Kuroda , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Takao Kuroda , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/265 , H01S5/00
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01S2301/173 , H01S2304/04 , H01S5/021 , H01S5/0422 , H01S5/305 , H01S5/3054 , Y10S148/072 , Y10S148/097 , Y10S148/119 , Y10S438/933 , Y10S438/938
摘要： When a semiconductor device is produced by growing epitaxially a compound semiconductor layer on a Si or Ge substrate, lattice matching between the substrate crystal and the compound semiconductor layer to be formed on the substrate can be improved by ion-implanting an ion species element, which increases the lattice constant of Si or Ge as the substrate, into the Si or Ge substrate in order to increase its lattice constant. In comparison with conventional semiconductor devices using Si or Ge into which ion implantation is not made, the semiconductor device produced by the method described above can improve remarkably its characteristics. In the case of a semiconductor laser device, for example, its threshold value drops drastically and its service life can be prolonged remarkably.
摘要翻译：当通过在Si或Ge衬底上外延生长化合物半导体层来制造半导体器件时，可以通过离子注入离子种类元素来改善衬底晶体和待形成在衬底上的化合物半导体层之间的晶格匹配，将作为衬底的Si或Ge的晶格常数增加到Si或Ge衬底中，以增加其晶格常数。与使用不进行离子注入的Si或Ge的常规半导体器件相比，通过上述方法制造的半导体器件可以显着改善其特性。在半导体激光器件的情况下，例如，其阈值急剧下降，使用寿命显着延长。

7. 发明授权

US4792197A Fabrication method and equipment for diffraction gratings 失效
$Fabrication method and equipment for diffraction gratings$
标题翻译：衍射光栅的制造方法和设备
公开(公告)号：US4792197A
公开(公告)日：1988-12-20
申请号：US886818
申请日：1986-07-18
申请人： Hiroaki Inoue , Shinji Tsuji , Hiroyoshi Matsumura , Akira Arimoto
发明人： Hiroaki Inoue , Shinji Tsuji , Hiroyoshi Matsumura , Akira Arimoto
IPC分类号： G02B5/18 , G02B6/12 , G02B6/122 , G02B5/32 , G03H1/04
CPC分类号： G02B5/1857 , Y10S359/90
摘要： A method and equipment for fabricating two diffraction gratings having the same period but phases that are shifted by .lambda./4 on a work to be treated. A laser beam is divided into two light beams and one of the beams is delayed over a portion of the light beam. The divided light beams are then mixed together so that they interfere. Using the known photolithography technology, the interference patterns are formed into diffraction gratings.
摘要翻译：一种用于制造两个衍射光栅的方法和设备，它们具有相同的周期，但是在待处理的工件上被λ/ 4偏移的相位。激光束被分成两束光束，一束光束被延迟一部分光束。然后将分割的光束混合在一起，使它们干涉。使用已知的光刻技术，将干涉图案形成为衍射光栅。

8. 发明授权

US4841536A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US4841536A
公开(公告)日：1989-06-20
申请号：US850685
申请日：1986-04-11
申请人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
发明人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.
摘要翻译：本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器，在台面条的两侧形成厚半导体层，使得所得到的pn 结点具有电流阻塞功能。本发明还公开了一种半导体激光器，其中在形成反向台面条之前进行上述p-n结的形成，并且引入离子注入以形成p-n结。此外，本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下，可以得到漏电流小且时间稳定的半导体器件。

9. 发明授权

US4720836A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US4720836A
公开(公告)日：1988-01-19
申请号：US767631
申请日：1985-08-20
申请人： Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
发明人： Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
IPC分类号： H01S5/00 , H01S5/12 , H01S5/34 , H01S3/08 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34
摘要： The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.
摘要翻译：本发明涉及一种半导体激光器，其以单一纵向模式和低阈值电流振荡，并且对反射光表现出良好的模式稳定性，并且提供具有用于增益的调制的分布式反馈半导体激光器的结构。该结构使得增益产生区域周期性地布置，并且对于激光辐射透明的物质被埋在区域之间。包含增益区域的层由超晶格层形成，杂质扩散或注入层的周期性位置，由此可以容易地形成几乎没有晶格损伤的透明区域和增益区域。

10. 发明申请

US20130184445A1 METHOD FOR OBSERVING PROTEIN CRYSTAL 有权
标题翻译：观察蛋白水晶的方法
公开(公告)号：US20130184445A1
公开(公告)日：2013-07-18
申请号：US13825280
申请日：2011-09-20
申请人： Norihiko Nishizawa , Hiroyoshi Matsumura , Yuusuke Mori , Shutaro Ishida , Kazuyoshi Itoh , Shigeru Sugiyama , Hiroaki Adachi , Tsuyoshi Inoue , Kazufumi Takano , Murakami Satoshi
发明人： Norihiko Nishizawa , Hiroyoshi Matsumura , Yuusuke Mori , Shutaro Ishida , Kazuyoshi Itoh , Shigeru Sugiyama , Hiroaki Adachi , Tsuyoshi Inoue , Kazufumi Takano , Murakami Satoshi
IPC分类号： G01B9/02 , C07K1/30
CPC分类号： G01B9/02091 , C07K1/306 , G01N21/4795 , G01N2021/1787
摘要： Provided are a method for observing protein crystal, wherein the growth process of the protein crystals is nondestructively and three-dimensionally monitored on a real-time basis and the growth of the crystals is controlled at a high accuracy to thereby enable the formation of single crystals having good qualities, which comprises observing the protein crystals, said protein crystals having been produced by a crystallization method using a gel, by an OCT measurement using light emitted from an ultrawideband light source;a method for observing protein crystals wherein the ultrawideband light source is an ultrawideband supercontinuum light source; a method for observing protein crystals wherein the center wavelength of the light emitted from the ultrawideband supercontinuum light source is a 0.8 μm band; and a method for observing protein crystals wherein the monitoring of the protein crystals is a monitoring by an in situ measurement.
摘要翻译：提供了一种用于观察蛋白质晶体的方法，其中蛋白质晶体的生长过程以实时的方式非破坏性和三维地监测，并且以高精度控制晶体的生长，从而能够形成单晶具有良好的质量，其包括通过使用从超宽带光源发射的光的OCT测量观察蛋白质晶体，所述蛋白质晶体是通过使用凝胶的结晶方法产生的; 一种观察蛋白质晶体的方法，其中超宽带光源是超宽带超连续光源; 观察蛋白质晶体的方法，其中从超宽带超连续光源发射的光的中心波长为0.8μm波段; 以及观察蛋白质晶体的方法，其中蛋白质晶体的监测是通过原位测量的监测。

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