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1. 发明授权

US07157363B2 Method for producing a semiconductor package, with a rerouted electrode formed on a resin projection portion 有权
标题翻译：用于制造半导体封装的方法，其具有形成在树脂突出部上的重路由电极
公开(公告)号：US07157363B2
公开(公告)日：2007-01-02
申请号：US10949386
申请日：2004-09-27
申请人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
发明人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
IPC分类号： H01L21/44
CPC分类号： H01L24/10 , H01L21/56 , H01L23/3107 , H01L23/3114 , H01L23/525 , H01L24/13 , H01L2224/02125 , H01L2224/0231 , H01L2224/02351 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/13 , H01L2224/13021 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00 , H01L2924/00014
摘要： An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
摘要翻译：形成在与电极焊盘（2）相适应的位置处具有开口部（3a）的绝缘层（3）。接着，在绝缘层（3）上形成树脂突起部（4）。此后，形成抗蚀剂膜，该抗蚀剂膜具有在与开口部分（31a）相适应的区域中形成的开口部分，树脂突出部分（4）和夹在其间的区域。通过使用抗蚀剂膜作为掩模，通过电解铜电镀形成Cu镀层（6）。

2. 发明授权

US07023088B2 Semiconductor package, semiconductor device and electronic device 失效
标题翻译：半导体封装，半导体器件和电子器件
公开(公告)号：US07023088B2
公开(公告)日：2006-04-04
申请号：US10442298
申请日：2003-05-21
申请人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
发明人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
IPC分类号： H01L23/48
CPC分类号： H01L24/10 , H01L21/56 , H01L23/3107 , H01L23/3114 , H01L23/525 , H01L24/13 , H01L2224/02125 , H01L2224/0231 , H01L2224/02351 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/13 , H01L2224/13021 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00 , H01L2924/00014
摘要： An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
摘要翻译：形成在与电极焊盘（2）相适应的位置处具有开口部（3a）的绝缘层（3）。接着，在绝缘层（3）上形成树脂突起部（4）。此后，形成抗蚀剂膜，该抗蚀剂膜具有在与开口部分（31a）相适应的区域中形成的开口部分，树脂突出部分（4）和夹在其间的区域。通过使用抗蚀剂膜作为掩模，通过电解铜电镀形成Cu镀层（6）。

3. 发明申请

US20050037539A1 Semiconductor package, semiconductor device, electronic device, and method for producing semiconductor package 有权
标题翻译：半导体封装，半导体器件，电子器件以及半导体封装的制造方法
公开(公告)号：US20050037539A1
公开(公告)日：2005-02-17
申请号：US10949386
申请日：2004-09-27
申请人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
发明人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
IPC分类号： H01L21/56 , H01L23/31 , H01L23/485 , H01L23/525 , H01L21/44
CPC分类号： H01L24/10 , H01L21/56 , H01L23/3107 , H01L23/3114 , H01L23/525 , H01L24/13 , H01L2224/02125 , H01L2224/0231 , H01L2224/02351 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/13 , H01L2224/13021 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00 , H01L2924/00014
摘要： An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
摘要翻译：形成在与电极焊盘（2）一致的位置具有开口部（3a）的绝缘层（3）。接着，在绝缘层（3）上形成树脂突起部（4）。此后，形成抗蚀剂膜，其具有在与开口部分（3a），树脂突出部分（4）和夹在其间的区域相适应的区域中形成的开口部分。通过使用抗蚀剂膜作为掩模，通过电解铜电镀形成Cu镀层（6）。

4. 发明授权

US06835595B1 Semiconductor package, semiconductor device, electronic device, and method of manufacturing semiconductor package 失效
标题翻译：半导体封装，半导体器件，电子器件以及半导体封装的制造方法
公开(公告)号：US06835595B1
公开(公告)日：2004-12-28
申请号：US09744976
申请日：2001-06-04
申请人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
发明人： Takanao Suzuki , Masatoshi Inaba , Tadanori Ominato , Masahiro Kaizu , Akihito Kurosaka , Masatoshi Inaba , Nobuyuki Sadakata , Mutsumi Masumoto , Kenji Masumoto
IPC分类号： H01L2144
CPC分类号： H01L24/10 , H01L21/56 , H01L23/3107 , H01L23/3114 , H01L23/525 , H01L24/13 , H01L2224/02125 , H01L2224/0231 , H01L2224/02351 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/13 , H01L2224/13021 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00 , H01L2924/00014
摘要： An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
摘要翻译：形成在与电极焊盘（2）一致的位置具有开口部（3a）的绝缘层（3）。接着，在绝缘层（3）上形成树脂突起部（4）。此后，形成抗蚀剂膜，其具有在与开口部分（3a），树脂突出部分（4）和夹在其间的区域相适应的区域中形成的开口部分。通过使用抗蚀剂膜作为掩模，通过电解铜电镀形成Cu镀层（6）。

5. 发明授权

US06214772B1 Process for preparing polycrystalline thin film, process for preparing oxide superconductor, and apparatus therefor 失效
标题翻译：制备多晶薄膜的方法，制备氧化物超导体的方法及其设备
公开(公告)号：US06214772B1
公开(公告)日：2001-04-10
申请号：US09091231
申请日：1998-06-18
申请人： Yasuhiro Iijima , Mariko Hosaka , Nobuo Tanabe , Nobuyuki Sadakata , Takashi Saitoh
发明人： Yasuhiro Iijima , Mariko Hosaka , Nobuo Tanabe , Nobuyuki Sadakata , Takashi Saitoh
IPC分类号： C23C1446
CPC分类号： H01L39/2461 , C23C14/083 , C23C14/087 , C23C14/22 , C23C14/46 , H01L39/2435 , Y02T50/67 , Y10S505/731
摘要： A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.
摘要翻译：提出了一种通过将从靶材（36）发射的粒子沉积在基底（A）上以形成由靶材料构成的薄膜（B），同时用沉积颗粒同时照射沉积颗粒来制造多晶薄膜（B）的方法由离子源（39）以入射角度产生的离子束在与膜表面的法线（H）成50至60度的范围内，并将膜温度保持在小于300摄氏度。当膜厚超过200nm时，该方法在膜中的晶粒的晶轴的取向优异。目标材料包括钇稳定的氧化锆，但也可以使用其它材料。在多晶薄膜（B）的顶部形成的超导体的层（C）产生显示出优异的超导特性的超导膜（22）。

6. 发明授权

US4665611A Method of fabricating superconductive electrical conductor 失效
标题翻译：制造超导电导体的方法
公开(公告)号：US4665611A
公开(公告)日：1987-05-19
申请号：US831462
申请日：1986-02-19
申请人： Nobuyuki Sadakata , Yoshimitsu Ikeno , Masaru Sugimoto , Osamu Kohno
发明人： Nobuyuki Sadakata , Yoshimitsu Ikeno , Masaru Sugimoto , Osamu Kohno
IPC分类号： H01B12/10 , C22F1/00 , H01B13/00 , H01L39/24
CPC分类号： H01L39/2409 , Y10S505/821 , Y10T29/49014
摘要： A method of fabricating a superconductive electrical conductor of Nb.sub.3 Sn type comprises a step of covering an elongated core member made of Nb with a covering member made of a third element selected from the group consisting of Ti, Ta, In, Hf, Al and Si. The core member covered with the covering member is covered with a tubular matrix made of a Cu-Sn alloy or a combination of Cu with Sn to form a composite wire element. Such wire elements are assembled in a tubular matrix made of a Cu-Sn alloy, Cu or a combination of Cu with Sn and reduced in diameter to form a multi-core composite wire element having a desired diameter. The assembling and reducing processing is effected at least one to form a multi-core composite wire which is then subjected to a diffusion heat-treatment to form an intermetallic compound of Nb.sub.3 Sn and the third element in the peripheral portion of the core member.
摘要翻译：制造Nb 3 Sn型超导电导体的方法包括用由Ti，Ta，In，Hf，Al和Si组成的组中选择的第三元素制成的覆盖部件覆盖由Nb制成的细长芯部件的步骤。用覆盖部件覆盖的芯部件被由Cu-Sn合金或Cu与Sn的组合制成的管状基体覆盖以形成复合线元件。这种线元件组装成由Cu-Sn合金制成的管状基体，Cu或Cu与Sn的组合并且直径减小以形成具有期望直径的多芯复合线材。至少进行组装和还原处理以形成多芯复合线，然后进行扩散热处理以在芯构件的周边部分中形成Nb 3 Sn的金属间化合物和第三元素。

7. 发明授权

US5283232A Method for producing oxide superconducting composite wire 失效
标题翻译：生产氧化物超导复合线的方法
公开(公告)号：US5283232A
公开(公告)日：1994-02-01
申请号：US932933
申请日：1992-08-20
申请人： Osamu Kohno , Yoshimitsu Ikeno , Nobuyuki Sadakata , Masaru Sugimoto , Mikio Nakagawa
发明人： Osamu Kohno , Yoshimitsu Ikeno , Nobuyuki Sadakata , Masaru Sugimoto , Mikio Nakagawa
IPC分类号： H01L39/14 , H01L39/24 , H01B12/10
CPC分类号： H01L39/143 , H01L39/248 , Y10S505/704 , Y10S505/884 , Y10S505/887 , Y10T29/49014
摘要： A method for producing an oxide superconducting composite wire is disclosed, which comprises the steps of: (a) molding a powdered oxide superconductor material to form a wire; (b) heat treating the wire in an oxygen atmosphere thereby forming the wire into an oxide superconducting member; (c) forming a non-oxidizing metal intermediate layer on a surface of the oxide superconducting member; (d) bundling a plurality of the oxide superconducting members containing the intermediate layer; (e) inserting the bundled oxide superconducting members into an oxidizing metal support tube; and (f) drawing the product of step (e) to reduce its diameter and heat-treating it.
摘要翻译：公开了一种生产氧化物超导复合线材的方法，其包括以下步骤：（a）将粉末状氧化物超导体材料模制成线材; （b）在氧气氛中热处理所述线，由此将所述线形成为氧化物超导构件; （c）在所述氧化物超导构件的表面上形成非氧化性金属中间层; （d）将含有所述中间层的多个所述氧化物超导部件捆扎; （e）将所述捆扎的氧化物超导构件插入氧化金属支撑管中; 和（f）拉制步骤（e）的产品以减小其直径并对其进行热处理。

8. 发明授权

US5908507A Chemical vapor deposition reactor and method of producing oxide superconductive conductor using the same 失效
标题翻译：化学气相沉积反应器及使用其制造氧化物超导导体的方法
公开(公告)号：US5908507A
公开(公告)日：1999-06-01
申请号：US889178
申请日：1997-07-07
申请人： Kazunori Onabe , Nobuyuki Sadakata , Takashi Saito , Osamu Kohno , Taichi Yamaguchi , Yasuhiro Iijima , Shigeo Nagaya , Naoki Hirano
发明人： Kazunori Onabe , Nobuyuki Sadakata , Takashi Saito , Osamu Kohno , Taichi Yamaguchi , Yasuhiro Iijima , Shigeo Nagaya , Naoki Hirano
IPC分类号： C30B25/08 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , H01B13/00 , H01L39/24 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/408 , C23C16/4412 , C23C16/455 , C23C16/45561 , C23C16/545 , H01L39/2441 , Y02T50/67
摘要： A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.
摘要翻译：公开了一种用于在基材表面形成膜的化学气相沉积（CVD）反应器和使用该CVD反应器的氧化物超导体的制造方法。 CVD反应器设置有处理室，将材料气体供给到处理室中的原料气体供给机构，以及从处理室内部排出气体的排气机构。处理室由隔板分割成基材导入部，反应室和基材导出部。在每个隔板中形成有基材输送口，在通过基材导入部，反应室和基材导出部的反应室内部形成有基材输送区域。原料气体供给机构设有原料气体供给源和气体分散器，与原料气体供给源连接。排气机构配置有与设置有气体扩散器的一侧相对的基材输送区域的两侧设置有排气孔，并且具有与排气孔连接的气体排气孔。气体扩散器和排气孔之间的基体输送区域彼此相对。 CVD反应器可用于通过在基材表面形成超导层，同时调节基体材料周围的气体流动来生产氧化物超导导体。

9. 发明授权

US5108986A Substituted YiBa.sub.2 Cu.sub.3 oxide superconductor 失效
标题翻译：取代YIBA2CU3氧化物超导体
公开(公告)号：US5108986A
公开(公告)日：1992-04-28
申请号：US566317
申请日：1990-08-13
申请人： Osamu Kohno , Yoshimitsu Ikeno , Nobuyuki Sadakata , Masaru Sugimoto , Mikio Nakagawa , Shin'ya Aoki
发明人： Osamu Kohno , Yoshimitsu Ikeno , Nobuyuki Sadakata , Masaru Sugimoto , Mikio Nakagawa , Shin'ya Aoki
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/126 , H01L39/2419 , Y10S505/78 , Y10S505/781
摘要： The invention relates to a superconductor manufacturing method and a superconductor manufactured by the method. More particularly, the invention is concerned wih an oxide superconductor of lamellar perovskite type and a method of manufacturing the same having extemely high critical temperature and critical current density as compared with conventional alloy superconductors or intermetallic compound superconductos. The superconductor is expressed byA-B-Cu-OwhereA represents at least one of elements of the group IIIa in the periodic table; andB represents at least one of elements of the group IIa in the periodic table,wherein at least one A and B consists of two elements belonging to the same group.The superconductor is manufactured by the steps of:(a) mixing powder of a compound containing at least one of elements of the group IIIa in the periodic table, powder of a compound containing at least one of elements of the group IIa in the periodic table, powder of a compound containing a homologous element of at least one of elements of the groups IIIa and IIa in the periodic table, and powder of copper oxide with each other in such a manner that a ratio in number of atoms among the at least one element of the group IIIa, the at least one element of the group IIa, Cu and O is brought to (0.1 to 2.0) : (0.1 to 3.0) : 1 : (1 to 4), to obtain raw material powder; and(b) sintering the raw material powder at a temperature in a range of from 800 to 1100 degrees C for 1 to 100 hours within an atmosphere in which oxygen concentration is at least 50%.

10. 发明授权

US5045527A Method of producing a superconductive oxide conductor 失效
标题翻译：制造超导氧化物导体的方法
公开(公告)号：US5045527A
公开(公告)日：1991-09-03
申请号：US251847
申请日：1988-10-03
申请人： Yoshimitsu Ikeno , Osamu Kohno , Kenji Goto , Atsushi Kume , Shin'ya Aoki , Nobuyuki Sadakata , Masaru Sugimoto , Toshio Usui , Mikio Nakagawa , Taichi Yamaguchi
发明人： Yoshimitsu Ikeno , Osamu Kohno , Kenji Goto , Atsushi Kume , Shin'ya Aoki , Nobuyuki Sadakata , Masaru Sugimoto , Toshio Usui , Mikio Nakagawa , Taichi Yamaguchi
IPC分类号： C04B35/45 , H01L39/24
CPC分类号： C04B35/4512 , C04B35/45 , C04B35/4504 , C04B35/4521 , H01L39/248 , Y10S505/74
摘要： A method of producing a superconductor including a superconductive oxide. At least one material is pressed for forming a filling material, the at least one material being selected from the group consisting of a starting material powder of the superconductive oxide, a powder of the superconductive oxide and a compact made of the starting material powder and/or the superconductive oxide powder, for forming a filling material. The filling material is charged into a metallic pipe to form a preform. The preform is moved along an axis thereof. During moving, the preform is swaged perpendicularly to the axis thereof to form a composite having a metallic sheath, made of the metallic pipe, and a core sheathed with the metallic sheath. The core of the composite is heated for producing the superconductive oxide.
摘要翻译：一种制造包括超导氧化物的超导体的方法。至少一种材料被压制以形成填充材料，所述至少一种材料选自由超导氧化物的原料粉末，超导氧化物的粉末和由原料粉末制成的压块和/ 或超导氧化物粉末，用于形成填充材料。将填充材料装入金属管中以形成预制件。预成型件沿其轴线移动。在移动过程中，将预制件垂直于其轴线锻压，以形成具有由金属管制成的金属护套的复合材料，以及用金属护套包覆的芯。加热复合材料的核心以生产超导氧化物。

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