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1. 发明授权

US5908507A Chemical vapor deposition reactor and method of producing oxide superconductive conductor using the same 失效
标题翻译：化学气相沉积反应器及使用其制造氧化物超导导体的方法
公开(公告)号：US5908507A
公开(公告)日：1999-06-01
申请号：US889178
申请日：1997-07-07
申请人： Kazunori Onabe , Nobuyuki Sadakata , Takashi Saito , Osamu Kohno , Taichi Yamaguchi , Yasuhiro Iijima , Shigeo Nagaya , Naoki Hirano
发明人： Kazunori Onabe , Nobuyuki Sadakata , Takashi Saito , Osamu Kohno , Taichi Yamaguchi , Yasuhiro Iijima , Shigeo Nagaya , Naoki Hirano
IPC分类号： C30B25/08 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , H01B13/00 , H01L39/24 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/408 , C23C16/4412 , C23C16/455 , C23C16/45561 , C23C16/545 , H01L39/2441 , Y02T50/67
摘要： A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.
摘要翻译：公开了一种用于在基材表面形成膜的化学气相沉积（CVD）反应器和使用该CVD反应器的氧化物超导体的制造方法。 CVD反应器设置有处理室，将材料气体供给到处理室中的原料气体供给机构，以及从处理室内部排出气体的排气机构。处理室由隔板分割成基材导入部，反应室和基材导出部。在每个隔板中形成有基材输送口，在通过基材导入部，反应室和基材导出部的反应室内部形成有基材输送区域。原料气体供给机构设有原料气体供给源和气体分散器，与原料气体供给源连接。排气机构配置有与设置有气体扩散器的一侧相对的基材输送区域的两侧设置有排气孔，并且具有与排气孔连接的气体排气孔。气体扩散器和排气孔之间的基体输送区域彼此相对。 CVD反应器可用于通过在基材表面形成超导层，同时调节基体材料周围的气体流动来生产氧化物超导导体。

2. 发明申请

US20050079116A1 Oxide superconducting conductor and its production method 审中-公开
标题翻译：氧化物超导导体及其制备方法
公开(公告)号：US20050079116A1
公开(公告)日：2005-04-14
申请号：US10768899
申请日：2004-01-30
申请人： Kazunori Onabe , Takashi Saito , Naoji Kashima , Shigeo Nagaya
发明人： Kazunori Onabe , Takashi Saito , Naoji Kashima , Shigeo Nagaya
IPC分类号： C23C12/00 , C23C16/40 , C23C16/54 , C23C26/00 , C23C28/04 , H01L39/24 , C01B33/12
CPC分类号： C23C28/322 , C23C12/00 , C23C16/408 , C23C16/545 , C23C26/00 , C23C28/321 , C23C28/325 , C23C28/345 , C23C28/3455 , H01L39/2438 , H01L39/2461 , Y10S428/93
摘要： The object of the present invention is to provide an oxide superconducting conductor having superior strength and superconductor characteristics, and its production method. In order to achieve the above object, the present invention provides an oxide superconducting conductor having an oxide superconductor layer obtained by a method in which a raw material gas of an oxide superconductor is chemically reacted on a base material for forming an oxide superconductor provided with an Ag layer having a rolling texture formed on at least one side of a base material containing Ag base material or other base metal, a diffusion layer in which Cu is diffused in Ag is formed on the surface layer of the oxide superconductor layer side of the above base material, and the above oxide superconductor layer is formed on the above diffusion layer; and, an oxide superconducting conductor comprising the sequential generation of a plurality of layers of oxide superconductor containing Cu by CVD on an Ag layer of a base material for forming an oxide superconducting conductor provided with an Ag layer having a rolling texture formed on at least one side of an Ag base material or other base metal, and among the above plurality of oxide superconductor layers, the Cu content of the oxide superconductor layer immediately above the base material is made to have a higher concentration than the Cu content of the other oxide superconductor layers.
摘要翻译：本发明的目的是提供一种具有优异的强度和超导特性的氧化物超导体及其制造方法。为了实现上述目的，本发明提供一种具有氧化物超导体层的氧化物超导体导体，该氧化物超导体层通过使氧化物超导体的原料气体在形成具有氧化物超导体的氧化物超导体的基材上发生化学反应的方法而获得，在含有Ag基材或其他基体金属的基材的至少一面上形成有轧制结构的Ag层，在上述氧化物超导体层侧的表面层上形成有Cu扩散Ag的扩散层在上述扩散层上形成上述氧化物超导体层，以及氧化物超导导体，其包括在用于形成氧化物超导导体的基材的Ag层上通过CVD连续生成含有Cu的多层氧化物超导体，所述氧化物超导体具有形成在至少一个 Ag基材或其他贱金属的侧面，并且在上述多个氧化物超导体层中，将紧贴在基材上方的氧化物超导体层的Cu含量设定为高于其它氧化物超导体的Cu含量层。

3. 发明授权

US06743531B2 Oxide superconducting conductor and its production method 失效
标题翻译：氧化物超导导体及其制备方法
公开(公告)号：US06743531B2
公开(公告)日：2004-06-01
申请号：US10177962
申请日：2002-06-19
申请人： Kazunori Onabe , Takashi Saito , Naoji Kashima , Shigeo Nagaya
发明人： Kazunori Onabe , Takashi Saito , Naoji Kashima , Shigeo Nagaya
IPC分类号： H01B1200
CPC分类号： C23C28/322 , C23C12/00 , C23C16/408 , C23C16/545 , C23C26/00 , C23C28/321 , C23C28/325 , C23C28/345 , C23C28/3455 , H01L39/2438 , H01L39/2461 , Y10S428/93
摘要： The object of the present invention is to provide an oxide superconducting conductor having superior strength and superconductor characteristics, and its production method. In order to achieve the above object, the present invention provides an oxide superconducting conductor having an oxide superconductor layer obtained by a method in which a raw material gas of an oxide superconductor is chemically reacted on a base material for forming an oxide superconductor provided with an Ag layer having a rolling texture formed on at least one side of a base material containing Ag base material or other base metal, a diffusion layer in which Cu is diffused in Ag is formed on the surface layer of the oxide superconductor layer side of the above base material, and the above oxide superconductor layer is formed on the above diffusion layer; and, an oxide superconducting conductor comprising the sequential generation of a plurality of layers of oxide superconductor containing Cu by CVD on an Ag layer of a base material for forming an oxide superconducting conductor provided with an Ag layer having a rolling texture formed on at least one side of an Ag base material or other base metal, and among the above plurality of oxide superconductor layers, the Cu content of the oxide superconductor layer immediately above the base material is made to have a higher concentration than the Cu content of the other oxide superconductor layers.
摘要翻译：本发明的目的是提供一种具有优异的强度和超导特性的氧化物超导导体及其制造方法。为了实现上述目的，本发明提供一种氧化物超导导体，其具有通过方法获得的氧化物超导体层其中氧化物超导体的原料气体在用于形成氧化物超导体的基材上发生化学反应，所述氧化物超导体具有形成在含有Ag基材或其它贱金属的基材的至少一侧上的具有滚动结构的Ag层，在上述基材的氧化物超导体层侧的表面层上形成有在Ag中扩散Cu的扩散层，在上述扩散层上形成上述氧化物超导体层; 以及氧化物超导导体，其包括在用于形成氧化物超导导体的基材的Ag层上通过CVD连续生成含有Cu的多层氧化物超导体，所述氧化物超导体具有形成在至少一个 Ag基材或其他贱金属的侧面，并且在上述多个氧化物超导体层中，使得在基材上方的氧化物超导体层的Cu含量比其他氧化物超导体的Cu含量高层。

4. 发明授权

US4377905A Method for manufacturing a Nb.sub.3 Sn superconductor and method for manufacturing hollow superconducting magnet 失效
标题翻译：制造Nb3Sn超导体的方法和制造中空超导磁体的方法
公开(公告)号：US4377905A
公开(公告)日：1983-03-29
申请号：US236271
申请日：1981-02-20
申请人： Koh Agatsuma , Kenichi Koyama , Itaru Todoriki , Osamu Kohno , Takashi Saito
发明人： Koh Agatsuma , Kenichi Koyama , Itaru Todoriki , Osamu Kohno , Takashi Saito
IPC分类号： H01F6/06 , H01F41/04 , H01L39/24 , H01B13/00 , H01B12/00
CPC分类号： H01L39/2409 , H01F41/048 , H01F6/06 , H01F2027/2819 , Y10S505/921 , Y10S505/924 , Y10T29/49014 , Y10T29/49071
摘要： A method for manufacturing a Nb.sub.3 Sn superconductor comprising the steps of preparing a composite conductor element which is composed of Cu-Sn alloy matrix and one or more Nb cores inserted and disposed in said matrix, if necessary sheathing the outer surface of the Cu-Sn alloy matrix with copper, subjecting the composite conductor element to a diameter reducing working until the predetermined diameter is reached, then forming an Sn-plating layer on the outer surface of the reduced diameter composite conductor element and thereafter subjecting the Sn-plated composite conductor element to diffusion heat treatment so that an intermetallic compound of Nb.sub.3 Sn is formed, and a method for manufacturing hollow superconducting magnet off an intermetallic compound type comprising the steps of extending a plurality of multicore superconductors together with thin tapes of a low temperature melting metal along grooves of a hollow conductor carrier, winding the superconductor assembly around a magnet reel and then heating up the superconducting magnet assembly to melt the thin tape of low temperature melting metal so that the multicore superconductors are secured to the hollow conductor carrier.
摘要翻译：一种制造Nb 3 Sn超导体的方法，包括如下步骤：制备由Cu-Sn合金基体和插入并设置在所述基体中的一个或多个Nb芯组成的复合导体元件，如果需要，将Cu-Sn合金的外表面使铜复合导体元件进行直径减小加工直到达到预定直径，然后在缩径复合导体元件的外表面上形成Sn镀层，然后将镀Sn复合导体元件扩散热处理，从而形成Nb 3 Sn的金属间化合物，以及用于制造中空超导磁体的金属间化合物类型的方法，包括以下步骤：将多根多芯超导体与低温熔融金属的薄带一起沿着空心导体载体，围绕磁体缠绕超导体组件卷轴，然后加热超导磁体组件以熔化低温熔融金属的薄带，使得多芯超导体固定到中空导体载体。

5. 发明授权

US4161062A Method for producing hollow superconducting cables 失效
标题翻译：中空超导电缆的制造方法
公开(公告)号：US4161062A
公开(公告)日：1979-07-17
申请号：US845770
申请日：1977-10-26
申请人： Ko Agatsuma , Kenichi Koyama , Itaru Todoriki , Tetsuo Yamaguchi , Osamu Kohno , Takashi Saito
发明人： Ko Agatsuma , Kenichi Koyama , Itaru Todoriki , Tetsuo Yamaguchi , Osamu Kohno , Takashi Saito
IPC分类号： H01B12/12 , H01V11/00
CPC分类号： H01B12/12 , Y02E40/641 , Y10S505/921 , Y10S505/927 , Y10T29/49014
摘要： A method for producing hollow superconducting cable comprises steps of providing grooves on the outer periphery of a hollow conductor adapted to be engageable therewithin fine multi-filamentary superconductors formed beforehand to be fitted into said grooves, and of fixing securely said multi-filamentary superconductors into said grooves by soldering with a metal having a low melting point.
摘要翻译：一种制造中空超导电缆的方法，包括以下步骤：在中空导体的外周上设置凹槽，该中空导体适于与预先形成的精细多丝超导体接合，以装配到所述凹槽中，并将所述多丝超导体牢固地固定到所述通过与具有低熔点的金属焊接而形成凹槽。

6. 发明授权

US06716796B1 Polycrystalline thin film and method of producing the same and oxide superconductor and method of producing the same 有权
标题翻译：多晶薄膜及其制造方法和氧化物超导体及其制造方法
公开(公告)号：US06716796B1
公开(公告)日：2004-04-06
申请号：US09857912
申请日：2001-06-11
申请人： Yasuhiro Iijima , Mariko Kimura , Takashi Saito
发明人： Yasuhiro Iijima , Mariko Kimura , Takashi Saito
IPC分类号： H01B1200
CPC分类号： H01L39/2461 , C30B23/002 , C30B23/02 , C30B29/22
摘要： A polycrystalline thin film B consisting mainly of oxide crystal grains 20 which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y2O3, Sc2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Yb2O3, Lu2O3, and Pm2O3 formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.
摘要翻译：由氧化物晶粒20主要组成的多晶薄膜B，其具有由式Y 2 O 3，Sc 2 O 3，Nd 2 O 3，Sm 2 O 3，Eu 2 O 3，Gd 2 O 3，Tb 2 O 3，Dy 2 O 3，Ho 2 O 3，Er 2 O 3，在多晶衬底A的成膜表面上形成的Yb2O3，Lu2O3和Pm2O3，其中多晶薄膜中沿与多晶衬底的成膜表面平行的平面中的不同晶粒的相应晶轴之间的晶界倾角为控制在30度以内。

7. 发明授权

US06783636B2 Method of producing polycrystalline thin film of MgO 有权
标题翻译：生产MgO多晶薄膜的方法
公开(公告)号：US06783636B2
公开(公告)日：2004-08-31
申请号：US09958367
申请日：2001-10-06
申请人： Yasuhiro Iijima , Mariko Kimura , Takashi Saito
发明人： Yasuhiro Iijima , Mariko Kimura , Takashi Saito
IPC分类号： C23C1446
CPC分类号： C23C14/081 , C23C14/46
摘要： A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10−2 Pa or lower while keeping the substrate temperature at 300° C. or lower.
摘要翻译：通过离子溅射法在基板上形成MgO的多晶薄膜，其中通过用离子束照射靶以从靶上移除颗粒并将颗粒沉积在基底上而获得薄膜。该膜优选在3.0×10 -2 Pa以下的减压气氛中形成，同时将基板温度保持在300℃以下。

8. 发明授权

US10828925B2 Image forming system 有权
公开(公告)号：US10828925B2
公开(公告)日：2020-11-10
申请号：US16271279
申请日：2019-02-08
申请人： Mamoru Kubo , Hiroto Akiyama , Ichitaro Kubota , Hiroki Honmochi , Takashi Saito , Kota Hihara
发明人： Mamoru Kubo , Hiroto Akiyama , Ichitaro Kubota , Hiroki Honmochi , Takashi Saito , Kota Hihara
IPC分类号： B42C1/12 , G03G15/00 , B65H43/00 , B65H37/04
摘要： To enable a bunch of sheets to be reliably discharged to a stack tray, also in the case where weight of the bunch of sheets formed on a processing tray is large, upon receiving a printing command, a main body control section checks information on an ink discharge amount in printing on a sheet, the number of sheets, sheet type and printing mode (two-side/one-side). By this means, the section recognizes weight of the bunch of sheets formed on the processing tray, and when determining that the weight is heavier than predetermined weight, deceases an upper limit value of the number of sheets of a bunch of sheets formed at a time to report to a user.

9. 发明授权

US10800631B2 Sheet stacking apparatus and image forming system 有权
公开(公告)号：US10800631B2
公开(公告)日：2020-10-13
申请号：US16271216
申请日：2019-02-08
申请人： Mamoru Kubo , Hiroto Akiyama , Ichitaro Kubota , Hiroki Honmochi , Takashi Saito , Kota Hihara
发明人： Mamoru Kubo , Hiroto Akiyama , Ichitaro Kubota , Hiroki Honmochi , Takashi Saito , Kota Hihara
IPC分类号： B41J13/10 , B65H31/02 , G03G15/00 , B65H31/12 , B65H31/36
摘要： To enable a bunch of sheets to be reliably discharged to a stack tray, also in the case where weight of the bunch of sheets formed on a processing tray is large, a post-processing control section receives information on an ink discharge amount, the number of sheets, sheet type, and printing mode (two-side/one-side) in printing on sheets from a main body control section of an image forming unit A, in forming a bunch of sheets on the processing tray. The control section thereby recognizes weight of a bunch of sheets formed on the processing tray, and when the section determines that the weight is heavier than predetermined weight, decreases a rotation velocity of a drive motor of a sheet bunch transport means, or increases a current amount applied to the drive motor. By this means, torque of the motor is increased, and the bunch of sheets is reliably discharged to the first stack tray.

10. 发明授权

US10464772B2 Post-processing device and image forming system provided with the same 有权
公开(公告)号：US10464772B2
公开(公告)日：2019-11-05
申请号：US15670394
申请日：2017-08-07
申请人： Takashi Saito
发明人： Takashi Saito
IPC分类号： B65H29/12 , B65H43/00 , B65H29/14 , B65H31/30 , B65H31/36 , B42C19/02 , B42C19/08
摘要： A post-processing device for processing a sheet includes a first post-processing section and a second post-processing section, for processing a sheet; a buffer section for temporarily staying a sheet transferred from a carry-in port; a first conveying section for conveying a sheet at the buffer section to the first post-processing section; and a second conveying section for conveying a sheet at the buffer section to the second post-processing section.

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