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    • 7. 发明授权
    • Method of fabricating superconductive electrical conductor
    • 制造超导电导体的方法
    • US4665611A
    • 1987-05-19
    • US831462
    • 1986-02-19
    • Nobuyuki SadakataYoshimitsu IkenoMasaru SugimotoOsamu Kohno
    • Nobuyuki SadakataYoshimitsu IkenoMasaru SugimotoOsamu Kohno
    • H01B12/10C22F1/00H01B13/00H01L39/24
    • H01L39/2409Y10S505/821Y10T29/49014
    • A method of fabricating a superconductive electrical conductor of Nb.sub.3 Sn type comprises a step of covering an elongated core member made of Nb with a covering member made of a third element selected from the group consisting of Ti, Ta, In, Hf, Al and Si. The core member covered with the covering member is covered with a tubular matrix made of a Cu-Sn alloy or a combination of Cu with Sn to form a composite wire element. Such wire elements are assembled in a tubular matrix made of a Cu-Sn alloy, Cu or a combination of Cu with Sn and reduced in diameter to form a multi-core composite wire element having a desired diameter. The assembling and reducing processing is effected at least one to form a multi-core composite wire which is then subjected to a diffusion heat-treatment to form an intermetallic compound of Nb.sub.3 Sn and the third element in the peripheral portion of the core member.
    • 制造Nb 3 Sn型超导电导体的方法包括用由Ti,Ta,In,Hf,Al和Si组成的组中选择的第三元素制成的覆盖部件覆盖由Nb制成的细长芯部件的步骤。 用覆盖部件覆盖的芯部件被由Cu-Sn合金或Cu与Sn的组合制成的管状基体覆盖以形成复合线元件。 这种线元件组装成由Cu-Sn合金制成的管状基体,Cu或Cu与Sn的组合并且直径减小以形成具有期望直径的多芯复合线材。 至少进行组装和还原处理以形成多芯复合线,然后进行扩散热处理以在芯构件的周边部分中形成Nb 3 Sn的金属间化合物和第三元素。
    • 9. 发明授权
    • Apparatus for drawing wire
    • 拉丝装置
    • US4578972A
    • 1986-04-01
    • US618120
    • 1984-06-07
    • Shigeo ShihyakugariOsamu KohnoYoshimitsu Ikeno
    • Shigeo ShihyakugariOsamu KohnoYoshimitsu Ikeno
    • B21C1/18B21C1/34
    • B21C1/18
    • A wire drawing apparatus includes a carriage movable along an elongated frame. A chuck is mounted on the frame for holding one end of a wire, and a drawing die is mounted on the carriage for passing the wire therethrough. An actuating device is connected to the carriage for moving it along the frame to move the die along the wire so as to reduce the cross-section of the wire. A plurality of clamp devices are mounted on the frame and spaced along the length thereof for holding the wire. A plurality of drive devices are operatively connected respectively to the clamp devices to move them into and out of an operative position in a path of travel of the carriage where the clamp devices engage the wire. A plurality of position sensors are operatively connected respectively to the drive devices and sense the approaching of the carriage toward the respective clamp devices disposed adjacent thereto to produce a sensing signal in response to which each drive devices is operated to move the clamp device associated therewith out of its operative position.
    • 拉丝装置包括可沿着细长框架移动的托架。 卡盘安装在框架上用于保持线的一端,并且拉拔模具安装在托架上以使线穿过其中。 驱动装置连接到滑架上,用于沿着框架移动,以沿导线移动模具,以便减小导线的横截面。 多个夹紧装置安装在框架上并沿其长度方向间隔开以保持线材。 多个驱动装置分别可操作地连接到夹紧装置,以将它们移入和移出滑架行进路径中的操作位置,其中夹紧装置与线接合。 多个位置传感器分别可操作地连接到驱动装置,并且感测托架朝着与其相邻设置的相应夹紧装置的接近以产生感测信号,响应于此,每个驱动装置被操作以将与其相关联的夹紧装置移出 的操作位置。
    • 10. 发明授权
    • Chemical vapor deposition reactor and method of producing oxide
superconductive conductor using the same
    • 化学气相沉积反应器及使用其制造氧化物超导导体的方法
    • US5908507A
    • 1999-06-01
    • US889178
    • 1997-07-07
    • Kazunori OnabeNobuyuki SadakataTakashi SaitoOsamu KohnoTaichi YamaguchiYasuhiro IijimaShigeo NagayaNaoki Hirano
    • Kazunori OnabeNobuyuki SadakataTakashi SaitoOsamu KohnoTaichi YamaguchiYasuhiro IijimaShigeo NagayaNaoki Hirano
    • C30B25/08C23C16/40C23C16/44C23C16/455C23C16/54C30B25/14H01B13/00H01L39/24C23C16/00
    • C23C16/45563C23C16/408C23C16/4412C23C16/455C23C16/45561C23C16/545H01L39/2441Y02T50/67
    • A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.
    • 公开了一种用于在基材表面形成膜的化学气相沉积(CVD)反应器和使用该CVD反应器的氧化物超导体的制造方法。 CVD反应器设置有处理室,将材料气体供给到处理室中的原料气体供给机构,以及从处理室内部排出气体的排气机构。 处理室由隔板分割成基材导入部,反应室和基材导出部。 在每个隔板中形成有基材输送口,在通过基材导入部,反应室和基材导出部的反应室内部形成有基材输送区域。 原料气体供给机构设有原料气体供给源和气体分散器,与原料气体供给源连接。 排气机构配置有与设置有气体扩散器的一侧相对的基材输送区域的两侧设置有排气孔,并且具有与排气孔连接的气体排气孔。 气体扩散器和排气孔之间的基体输送区域彼此相对。 CVD反应器可用于通过在基材表面形成超导层,同时调节基体材料周围的气体流动来生产氧化物超导导体。