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1. 发明授权

US08222055B2 Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device 有权
标题翻译：用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
公开(公告)号：US08222055B2
公开(公告)日：2012-07-17
申请号：US12613869
申请日：2009-11-06
申请人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
发明人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , C23C16/30 , C23C16/345 , H01L33/08 , H01L33/18 , Y10S977/773
摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
摘要翻译：提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

2. 发明授权

US07791095B2 Semiconductor light emitting diode 有权
标题翻译：半导体发光二极管
公开(公告)号：US07791095B2
公开(公告)日：2010-09-07
申请号：US10572486
申请日：2005-08-05
申请人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/38
摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.
摘要翻译：提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射层以进一步提高发光二极管的发光效率。

3. 发明授权

US07772587B2 Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US07772587B2
公开(公告)日：2010-08-10
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

4. 发明申请

US20090001401A1 Semiconductor Light Emitting Diode 有权
标题翻译：半导体发光二极管
公开(公告)号：US20090001401A1
公开(公告)日：2009-01-01
申请号：US10572486
申请日：2005-08-05
申请人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/38
摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.
摘要翻译：提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射层以进一步提高发光二极管的发光效率。

5. 发明申请

US20080303018A1 Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US20080303018A1
公开(公告)日：2008-12-11
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

6. 发明申请

US20080296593A1 Silicon Light Emitting Device 审中-公开
标题翻译：硅光发射装置
公开(公告)号：US20080296593A1
公开(公告)日：2008-12-04
申请号：US12096610
申请日：2006-06-16
申请人： Nae Man Park , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/18 , H01L33/20 , H01L33/26 , H01L33/34 , H01L33/42
摘要： Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid.
摘要翻译：提供了一种高效率的硅发光器件，其包括改进的结构，通过该结构，比传统的发光器件朝向发光器件的侧面发射更多的光朝向其正面发射，以便提高亮度。硅发光器件包括衬底，形成在衬底上的多个发光结构，每个发光结构包括有源层，以及金属电极，其包括形成在衬底下方的下金属电极和形成在其上的上金属电极在发光结构上。发光结构具有垂直横截面为反梯形的列形状。

7. 发明申请

US20090101928A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20090101928A1
公开(公告)日：2009-04-23
申请号：US11577728
申请日：2005-12-07
申请人： Kyung Hyun Kim , Rae Man Park , Tae Youb Kim , Gun Yong Sung
发明人： Kyung Hyun Kim , Rae Man Park , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00 , H01J1/62 , H01L51/52 , H01L51/54 , H01L51/56 , H01L51/00
CPC分类号： H01L33/42 , H01L33/32 , H01L51/52 , H01L51/5206
摘要： Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode. As a result, the adhesion between the substrate and the transparent electrode or between the upper doping layer and the transparent electrode is enhanced and the layer separation from the transparent electrode is prevented, thereby improving efficiency of the light emitting diode and increasing the production yield.
摘要翻译：提供一种发光二极管及其制造方法。在无机发光二极管中，在与透明电极接触的上掺杂层上形成选自由氧化物层，氮化物层和金属层组成的组中的至少一层，等离子体处理为在所得结构上进行等离子体蚀刻层，从而提高上掺杂层和透明电极之间的粘附性。在有机发光二极管中，在与透明电极接触的塑料基板上形成选自氧化物层，氮化物层和金属层的至少一层，进行等离子体处理在所得结构上形成等离子体蚀刻层，从而提高基板和透明电极之间的粘附性。结果，衬底与透明电极之间或上部掺杂层和透明电极之间的粘附性增强，并且防止了与透明电极的层分离，从而提高了发光二极管的效率并提高了产量。

8. 发明授权

US08022444B2 Biosensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US08022444B2
公开(公告)日：2011-09-20
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L27/085 , H01L27/14 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

9. 发明申请

US20110151139A1 METHOD FOR SELECTIVELY FUNCTIONALIZING NON-MODIFIED SOLID SURFACE AND METHOD FOR IMMOBILIZING ACTIVE MATERIAL ON THE FUNCTIONALIZED SOLID SURFACE 审中-公开
标题翻译：用于选择性地功能化非改性固体表面的方法和在功能化固体表面上固定活性材料的方法
公开(公告)号：US20110151139A1
公开(公告)日：2011-06-23
申请号：US12944655
申请日：2010-11-11
申请人： An Soon KIM , Wan Joong Kim , Chil Seong Ah , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chang Geun Ahn , Gun Yong Sung
发明人： An Soon KIM , Wan Joong Kim , Chil Seong Ah , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chang Geun Ahn , Gun Yong Sung
IPC分类号： B05D3/06 , B05D3/00 , B05D3/10
CPC分类号： G01N33/54353 , B01J2219/00612 , B01J2219/00637 , B01J2219/00725
摘要： A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.
摘要翻译：用于选择性官能化未改性固体表面以产生光响应涂层的方法包括：仅使用氢氧化和硝化官能化未改性的固体表面; 在使用光官能化的非改性固体表面上形成EGPA涂层; 通过从EGPA涂层去除胺保护基或胺盐形成EGA涂层; 并且使用所述EGA涂层在所述未改性固体表面上形成具有光响应性官能团的涂层。

10. 发明申请

US20120258882A1 METHOD FOR QUANTITATIVELY DETECTING BIOMOLECULES 审中-公开
标题翻译：用于定量检测生物分子的方法
公开(公告)号：US20120258882A1
公开(公告)日：2012-10-11
申请号：US13443833
申请日：2012-04-10
申请人： Chil Seong Ah , Chang Geun Ahn , Tae Youb Kim , Gun Yong Sung
发明人： Chil Seong Ah , Chang Geun Ahn , Tae Youb Kim , Gun Yong Sung
IPC分类号： C40B30/04 , B82Y15/00
CPC分类号： B82Y15/00 , G01N33/54306 , G01N33/54346 , G01N33/544 , G01N33/585
摘要： Provided is a method for quantitatively detecting biomolecules with high sensitivity for a short time by using nanoparticles and a metal deposition method in an immuno-detection using a well-type plastic substrate.
摘要翻译：本发明提供一种通过使用纳米颗粒和金属沉积方法在使用良好型塑料基材进行免疫检测的方法来定期检测短时间内具有高灵敏度的生物分子的方法。

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