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1. 发明申请

US20080303018A1 Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US20080303018A1
公开(公告)日：2008-12-11
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

2. 发明授权

US07772587B2 Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US07772587B2
公开(公告)日：2010-08-10
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

3. 发明授权

US08222055B2 Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device 有权
标题翻译：用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
公开(公告)号：US08222055B2
公开(公告)日：2012-07-17
申请号：US12613869
申请日：2009-11-06
申请人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
发明人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , C23C16/30 , C23C16/345 , H01L33/08 , H01L33/18 , Y10S977/773
摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
摘要翻译：提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

4. 发明申请

US20090001401A1 Semiconductor Light Emitting Diode 有权
标题翻译：半导体发光二极管
公开(公告)号：US20090001401A1
公开(公告)日：2009-01-01
申请号：US10572486
申请日：2005-08-05
申请人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/38
摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.
摘要翻译：提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射层以进一步提高发光二极管的发光效率。

5. 发明授权

US07791095B2 Semiconductor light emitting diode 有权
标题翻译：半导体发光二极管
公开(公告)号：US07791095B2
公开(公告)日：2010-09-07
申请号：US10572486
申请日：2005-08-05
申请人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/38
摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.
摘要翻译：提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射层以进一步提高发光二极管的发光效率。

6. 发明申请

US20080296593A1 Silicon Light Emitting Device 审中-公开
标题翻译：硅光发射装置
公开(公告)号：US20080296593A1
公开(公告)日：2008-12-04
申请号：US12096610
申请日：2006-06-16
申请人： Nae Man Park , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/18 , H01L33/20 , H01L33/26 , H01L33/34 , H01L33/42
摘要： Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid.
摘要翻译：提供了一种高效率的硅发光器件，其包括改进的结构，通过该结构，比传统的发光器件朝向发光器件的侧面发射更多的光朝向其正面发射，以便提高亮度。硅发光器件包括衬底，形成在衬底上的多个发光结构，每个发光结构包括有源层，以及金属电极，其包括形成在衬底下方的下金属电极和形成在其上的上金属电极在发光结构上。发光结构具有垂直横截面为反梯形的列形状。

7. 发明授权

US08022444B2 Biosensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US08022444B2
公开(公告)日：2011-09-20
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L27/085 , H01L27/14 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

8. 发明申请

US20090152597A1 BIOSENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US20090152597A1
公开(公告)日：2009-06-18
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

9. 发明授权

US06998643B2 Silicon-based light emitting diode 有权
标题翻译：硅基发光二极管
公开(公告)号：US06998643B2
公开(公告)日：2006-02-14
申请号：US10923230
申请日：2004-08-20
申请人： Taeyoub Kim , Nae Man Park , Gun Yong Sung
发明人： Taeyoub Kim , Nae Man Park , Gun Yong Sung
IPC分类号： H01L27/15
CPC分类号： H01L33/34 , H01L33/105 , H01L33/24 , H01L33/465
摘要： A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.
摘要翻译：硅基发光二极管同时采用掺杂层和分布式布拉格反射器（DBR）。硅基发光二极管包括具有相对于第一侧和第二侧的有源层。第一反射部分面向有源层的第一侧，并且第二反射部分面向有源层的第二侧。第一掺杂层介于有源层和第一反射部分之间。第二掺杂层介于有源层和第二反射部分之间。第一电极可电连接到第一掺杂层，第二电极可电连接到第二掺杂层。这里，第一反射部和第二反射部中的至少一个具有通过交替堆叠两种不同构成的含硅绝缘层和栅极而形成的DBR。

10. 发明授权

US06773946B2 Method for fabricating light-emitting diode using nanosize nitride semiconductor multiple quantum wells 有权
标题翻译：使用纳米尺度氮化物半导体多量子阱制造发光二极管的方法
公开(公告)号：US06773946B2
公开(公告)日：2004-08-10
申请号：US10330336
申请日：2002-12-30
申请人： Yong Tae Moon , Nae Man Park , Baek Hyun Kim , Seong Ju Park
发明人： Yong Tae Moon , Nae Man Park , Baek Hyun Kim , Seong Ju Park
IPC分类号： H01L2100
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/02601 , H01L21/0262 , H01L33/08 , H01L33/18 , H01L33/24
摘要： Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nanosized nitride semiconductor multiple quantum well light-emitting diode and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor epitaxial thin film growth on silicon substrates. Accordingly, a high-quality nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode having no crystalline defect can be provided. Furthermore, the nanosized multiple quantum well light-emitting diode according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor light-emitting diode using III-nitride epitaxial thin films grown on silicon substrates. In addition, the number of processes of fabricating the diode is remarkably reduced to result in an economical and productive light-emitting diode fabrication process.
摘要翻译：公开了一种纳米尺寸的III族氮化物化合物半导体多量子阱发光二极管，包括硅衬底（100）和形成在衬底上的非晶氮化硅层（基底）（200），并且包括III族氮化物半导体纳米晶粒（230）自发形成。根据本发明的纳米尺寸氮化物半导体多量子阱发光二极管及其制造方法没有在硅衬底上常规III族氮化物化合物半导体外延薄膜生长的问题。因此，可以提供不具有结晶缺陷的高质量的纳米级III族氮化物化合物半导体多量子阱发光二极管。此外，根据本发明的纳米尺度多量子阱发光二极管不需要p型GaN薄膜，因此不存在在制造III族氮化物化合物的常规方法中存在问题的可能性使用在硅衬底上生长的III族氮化物外延薄膜的半导体发光二极管。此外，制造二极管的工艺的数量显着减少，从而导致经济和高效的发光二极管制造工艺。

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