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1. 发明授权

US08263964B2 Three-dimensional nanodevices including nanostructures 有权
标题翻译：包括纳米结构在内的三维纳米器件
公开(公告)号：US08263964B2
公开(公告)日：2012-09-11
申请号：US12672995
申请日：2008-05-19
申请人： Han Young Yu , Byung Hoon Kim , An Soon Kim , In Bok Baek , Chil Seong Ah , Jong Heon Yang , Chan Woo Park , Chang Geun Ahn
发明人： Han Young Yu , Byung Hoon Kim , An Soon Kim , In Bok Baek , Chil Seong Ah , Jong Heon Yang , Chan Woo Park , Chang Geun Ahn
IPC分类号： H01L29/06
CPC分类号： H01J49/4205 , B81B7/0025 , B81B2201/0214 , B81B2201/0271 , B82Y10/00 , B82Y40/00 , G01N2291/0257 , H01J49/0018 , H01L29/0673 , H01L29/7613 , H01L29/775 , H03H2009/02314
摘要： Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.
摘要翻译：提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分，设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测外部供应的吸附材料。因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。

2. 发明授权

US08164123B2 Biosensor and method of driving the same 失效
标题翻译：生物传感器及其驱动方法
公开(公告)号：US08164123B2
公开(公告)日：2012-04-24
申请号：US12703939
申请日：2010-02-11
申请人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
发明人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： G01N27/4145
摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.
摘要翻译：提供了一种生物传感器及其驱动方法。生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层参考电极并与靶分子反应。因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。

3. 发明授权

US08163240B2 Detection device and system 有权
标题翻译：检测装置和系统
公开(公告)号：US08163240B2
公开(公告)日：2012-04-24
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N15/06 , G01N33/00 , G01N33/48 , G01N27/00
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

4. 发明申请

US20110193052A1 THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES 有权
标题翻译：包括纳米结构的三维纳米器件
公开(公告)号：US20110193052A1
公开(公告)日：2011-08-11
申请号：US12672995
申请日：2008-05-19
申请人： Han Young Yu , Byung Hoon Kim , An Soon Kim , In Bok Baek , Chil Seong Ah , Jong Heon Yang , Chan Woo Park , Chang Geun Ahn
发明人： Han Young Yu , Byung Hoon Kim , An Soon Kim , In Bok Baek , Chil Seong Ah , Jong Heon Yang , Chan Woo Park , Chang Geun Ahn
IPC分类号： H01L29/06 , B82Y99/00
CPC分类号： H01J49/4205 , B81B7/0025 , B81B2201/0214 , B81B2201/0271 , B82Y10/00 , B82Y40/00 , G01N2291/0257 , H01J49/0018 , H01L29/0673 , H01L29/7613 , H01L29/775 , H03H2009/02314
摘要： Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.
摘要翻译：提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分，设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测外部供应的吸附材料。因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。

5. 发明申请

US20100090197A1 METHOD OF MANUFACTURING SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND SEMICONDUCTOR NANOWIRE SENSOR DEVICE MANUFACTURED ACCORDING TO THE METHOD 有权
标题翻译：制造半导体纳米传感器器件的方法和根据该方法制造的半导体纳米传感器器件
公开(公告)号：US20100090197A1
公开(公告)日：2010-04-15
申请号：US12494846
申请日：2009-06-30
申请人： Chan-Woo PARK , Chang-Geun AHN , Jong-Heon YANG , In-Bok BAEK , Chil-Seong AH , An-Soon KIM , Tae-Youb KIM , Gun-Yong SUNG , Seon-Hee PARK
发明人： Chan-Woo PARK , Chang-Geun AHN , Jong-Heon YANG , In-Bok BAEK , Chil-Seong AH , An-Soon KIM , Tae-Youb KIM , Gun-Yong SUNG , Seon-Hee PARK
IPC分类号： H01L29/12 , H01L21/335
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/127 , H01L29/0673 , H01L29/66439 , H01L29/772 , Y10S977/959
摘要： Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
摘要翻译：提供一种制造根据该方法制造的半导体纳米线传感器装置和半导体纳米线传感器装置的方法。该方法包括：制备第一导电型单晶半导体衬底，从第一导电型单晶半导体衬底形成线状第一导电型单晶图案，在第一导电型单晶体的两个侧壁上形成第二导电型外延图案图案，并且在第二导电型外延图案的两端形成源电极和漏电极。

6. 发明申请

US20100080932A1 METHOD FOR SELECTIVELY FUNCTIONALIZING NON-MODIFIED SOLID SURFACE AND METHOD FOR IMMOBILIZING ACTIVE MATERIAL ON THE FUNCTIONALIZED SOLID SURFACE 审中-公开
标题翻译：用于选择性地功能化非改性固体表面的方法和在功能化固体表面上固定活性材料的方法
公开(公告)号：US20100080932A1
公开(公告)日：2010-04-01
申请号：US12517193
申请日：2007-05-14
申请人： An-soon Kim , Han-Young Yu , In-Bok Baek , Jong-Heon Yang , Chang-Geun Ahn , Chan-Woo Park , Seong-Jae Lee , Chil-Seong Ah
发明人： An-soon Kim , Han-Young Yu , In-Bok Baek , Jong-Heon Yang , Chang-Geun Ahn , Chan-Woo Park , Seong-Jae Lee , Chil-Seong Ah
IPC分类号： B05D3/06
CPC分类号： G01N33/54353 , B01J2219/00497
摘要： Provided is a method for selectively functionalizing unmodified solid surface, not oxidized and nitrified, into an aldehyde group, and a method for immobilizing an active material such as bio material or functional material on the functionalized aldehyde solid surface through strong and stable chemical bonding. Differently from a conventional method immobilizing deoxyribonucleic acid (DNA) using a cross linker, the method of the present invention does not require a cross linker reaction step to thereby shorten a process. Also, since a cross linker is absent, the monomolecular layer on the surface of a device is thin, which reduces a perturbation effect by molecular layer. This is useful in fabrication of molecular electronic devices and bio-active devices. In addition, since the bio material or functional material is selectively immobilized only on the unmodified surface, the present invention can functionalize only a specific solid surface and develop a highly sensitive sensor and an improved functional device.
摘要翻译：提供了将未改性的固体表面官能化而未被氧化并硝化成醛基的方法，以及通过强力稳定的化学键将活性物质如生物材料或功能材料固定在官能化的醛固体表面上的方法。与使用交联剂固定脱氧核糖核酸（DNA）的常规方法不同，本发明的方法不需要交联反应步骤，从而缩短了工艺。此外，由于不存在交联剂，器件表面上的单分子层薄，这降低了分子层的扰动效应。这在分子电子器件和生物活性器件的制造中是有用的。此外，由于生物材料或功能材料仅选择性地固定在未改性的表面上，所以本发明只能使特定的固体表面官能化，并开发出高灵敏度的传感器和改进的功能元件。

7. 发明申请

US20090152596A1 SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US20090152596A1
公开(公告)日：2009-06-18
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon YANG , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon YANG , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

8. 发明申请

US20100119733A1 METHOD OF IMMOBILIZING ACTIVE MATERIAL ON SURFACE OF SUBSTRATE 审中-公开
标题翻译：基体表面活性材料的固定方法
公开(公告)号：US20100119733A1
公开(公告)日：2010-05-13
申请号：US12419527
申请日：2009-04-07
申请人： An-Soon KIM , Chil-Seong AH , Hye-Kyoung YANG , Chan-Woo PARK , Jong-Heon YANG , Chang-Geun AHN , In-Bok BAEK , Tae-Youb KIM , Gun-Yong SUNG , Seon-Hee PARK
发明人： An-Soon KIM , Chil-Seong AH , Hye-Kyoung YANG , Chan-Woo PARK , Jong-Heon YANG , Chang-Geun AHN , In-Bok BAEK , Tae-Youb KIM , Gun-Yong SUNG , Seon-Hee PARK
IPC分类号： C23C16/513 , B05D3/06
CPC分类号： G01N33/54353 , C12Q1/6834 , G01N33/551
摘要： Provided is a method of immobilizing an active material on a surface of a substrate. The method including cleaning a substrate, functionalizing a surface of the substrate using a hydroxyl group, functionalizing the surface of the substrate at atmospheric pressure using a vaporized organic silane compound, and immobilizing an active material to an end of the surface of the substrate. Therefore, since evacuation or the use of carrier gas is not necessary, a uniform, high-density, single-molecular, silane compound film can be formed inexpensively, simply, and reproducibly, and an active material can be immobilized to the single-molecular silane compound film.
摘要翻译：提供了将活性物质固定在基材表面上的方法。该方法包括清洗基材，使用羟基官能化基材的表面，使用蒸发的有机硅烷化合物在大气压下使基材的表面官能化，并将活性材料固定在基材的表面的末端。因此，由于不需要排气或使用载气，所以可以廉价地，简单地且可再现地形成均匀，高密度的单分子硅烷化合物膜，并且活性材料可以固定在单分子硅烷化合物膜。

9. 发明申请

US20100013030A1 BIOSENSOR, MANUFACTURING METHOD THEREOF, AND BIOSENSING APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：生物传感器，其制造方法和包括其的生物传感装置
公开(公告)号：US20100013030A1
公开(公告)日：2010-01-21
申请号：US12443376
申请日：2007-08-30
申请人： Han-Young Yu , An-Soon Kim , Chil-Seong Ah , Jong-Heon Yang , In-Bok Baek , Chang-Geun Ahn , Seong-Jae Lee , Jin-Ho Yun
发明人： Han-Young Yu , An-Soon Kim , Chil-Seong Ah , Jong-Heon Yang , In-Bok Baek , Chang-Geun Ahn , Seong-Jae Lee , Jin-Ho Yun
IPC分类号： H01L29/66 , H01L21/30
CPC分类号： G01N33/54366 , B01L3/502707 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0887
摘要： Provided is a biosensor with a three-dimensional multi-layered structure, a method for manufacturing the biosensor, and a biosensing apparatus including the biosensor. The biosensing apparatus includes: a chamber having an inlet through which a fluid containing a biomaterial enters and an outlet through which the fluid exits; and a plurality of biosensors inserted and fixed in the chamber. Each biosensor includes: a support unit having a fluid channel through which a fluid containing a biomaterial flows; and a sensing unit disposed on the support unit in such a way that the sensing unit is exposed three-dimensionally in the fluid channel of the support unit, the sensing unit being surface-treated with a reactive material that is to react with the biomaterial flowing through the fluid channel.
摘要翻译：本发明提供具有三维多层结构的生物传感器，生物传感器的制造方法以及包括生物传感器的生物传感装置。所述生物传感装置包括：具有入口的腔室，含有生物材料的流体通过所述入口进入，所述流体通过所述出口流出; 以及插入并固定在所述室中的多个生物传感器。每个生物传感器包括：具有流体通道的支撑单元，含有生物材料的流体通过该流体通道流动; 以及感测单元，其以这样的方式设置在所述支撑单元上，使得所述感测单元在所述支撑单元的流体通道中三维地暴露，所述感测单元用反应性材料进行表面处理，所述反应性材料与所述生物材料流动通过流体通道。

10. 发明授权

US08119430B2 Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method 有权
标题翻译：根据该方法制造半导体纳米线传感器器件和半导体纳米线传感器器件的方法
公开(公告)号：US08119430B2
公开(公告)日：2012-02-21
申请号：US12494846
申请日：2009-06-30
申请人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
发明人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/127 , H01L29/0673 , H01L29/66439 , H01L29/772 , Y10S977/959
摘要： Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
摘要翻译：提供一种制造根据该方法制造的半导体纳米线传感器装置和半导体纳米线传感器装置的方法。该方法包括：制备第一导电型单晶半导体衬底，从第一导电型单晶半导体衬底形成线状第一导电型单晶图案，在第一导电型单晶体的两个侧壁上形成第二导电型外延图案图案，并且在第二导电型外延图案的两端形成源电极和漏电极。

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