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1. 发明授权

US5356259A Apparatus for controlling hydraulic cylinders of a power shovel 失效
标题翻译：用于控制电铲的液压缸的装置
公开(公告)号：US5356259A
公开(公告)日：1994-10-18
申请号：US956075
申请日：1992-10-02
申请人： Tadayuki Hanamoto , Shinji Takasugi
发明人： Tadayuki Hanamoto , Shinji Takasugi
IPC分类号： E02F3/43 , E02F9/20
CPC分类号： E02F3/438 , E02F3/437
摘要： A technique relating to automatic excavation by a power shovel is shown. An ideal reference locus of movement of a front edge of a bucket is approximated by a plurality of points, positions of the plurality of points and postures of the bucket at these points are previously set. If the start of automatic excavation is assigned by an operation pedal or the like, the position of the front edge of the bucket at the assigned moment is made a position to start excavation. The positions of the plurality of points set relative to a vehicle are calculated for each of excavation sections divided by the plurality of points according to the position to start excavation, and angles of rotation of respective working machines needed to move the front edge of the bucket to the calculated position and to set the bucket to the posture of the bucket set are calculated for each of the excavation sections, and the respective working machines are automatically driven making the calculated angles of rotation target angles of rotation for each excavation section. The bucket, an arm and a boom are thereby automatically controlled so that the front edge of the bucket moves along the ideal reference locus of movement set and the bucket has the ideal posture set by simple operations. Thus, it is intended to improve operation efficiency. After terminating excavation, dropping of load is reduced by automatically driving the bucket so that the bucket is always horizontally maintained in accordance with manual operations of the arm and boom.
摘要翻译：显示了与铲斗自动挖掘有关的技术。桶的前边缘的理想的运动轨迹近似于多个点，在这些点处，多个点和铲斗的姿势的位置被预先设定。如果通过操作踏板等分配自动挖掘的开始，则将在分配时刻的铲斗的前边缘的位置设为开始挖掘的位置。根据开始挖掘的位置，根据多个点划分的每个挖掘部分计算多个点相对于车辆的位置，以及使铲斗的前边缘移动所需的各个加工机的旋转角度对于每个挖掘部分计算到计算出的位置并将铲斗设定为铲斗组的姿势，并且自动驱动各个作业机，使得计算出的每个挖掘部分的旋转角度的目标角度。因此，铲斗，臂和吊杆被自动控制，使得铲斗的前边缘沿着理想的移动设定基准轨迹移动，铲斗具有通过简单操作设定的理想姿势。因此，旨在提高操作效率。在挖掘结束后，通过自动驱动铲斗来降低载荷的下降，从而根据手臂和吊臂的手动操作始终水平地保持铲斗。

2. 发明授权

US5178510A Apparatus for controlling the hydraulic cylinder of a power shovel 失效
标题翻译：用于控制铲斗液压缸的装置
公开(公告)号：US5178510A
公开(公告)日：1993-01-12
申请号：US738592
申请日：1991-07-31
申请人： Tadayuki Hanamoto , Shinji Takasugi
发明人： Tadayuki Hanamoto , Shinji Takasugi
IPC分类号： E02F3/43
CPC分类号： E02F3/437 , E02F3/438
摘要： A technique relating to automatic excavation by a power shovel is shown. An ideal reference locus of movement of a front edge of a bucket is approximated by a plurality of points, positions of the plurality of points and postures of the bucket at these points are previously set. If the start of automatic excavation is assigned by an operation pedal or the like, the position of the front edge of the bucket at the assigned moment is made a position to start excavation. The positions of the plurality of points set relative to a vehicle are calculated for each of excavation sections divided by the plurality of points according to the position to start excavation, and angles of rotation of respective working machines needed to move the front edge of the bucket to the calculated position and to set the bucket to the posture of the bucket set are calculated for each of the excavation sections, and the respective working machines are automatically driven making the calculated angles of rotation target angles of rotation for each excavation section. The bucket, an arm and a boom are thereby automatically controlled so that the front edge of the bucket moves along the ideal reference locus of movement set and the bucket has the ideal posture set by simple operations. Thus, it is intended to improve operation efficiency. After terminating excavation, dropping of load is reduced by automatically driving the bucket so that the bucket is always horizontally maintained in accordance with manual operations of the arm and boom.
摘要翻译：显示了与铲斗自动挖掘有关的技术。桶的前边缘的理想的运动轨迹近似于多个点，在这些点处，多个点和铲斗的姿势的位置被预先设定。如果通过操作踏板等分配自动挖掘的开始，则将在分配时刻的铲斗的前边缘的位置设为开始挖掘的位置。根据开始挖掘的位置，根据多个点划分的每个挖掘部分计算多个点相对于车辆的位置，以及使铲斗的前边缘移动所需的各个加工机的旋转角度对于每个挖掘部分计算到计算出的位置并将铲斗设定为铲斗组的姿势，并且自动驱动各个作业机，使得计算出的每个挖掘部分的旋转角度的目标角度。因此，铲斗，臂和吊杆被自动控制，使得铲斗的前边缘沿着理想的移动设定基准轨迹移动，铲斗具有通过简单操作设定的理想姿势。因此，旨在提高操作效率。在挖掘结束后，通过自动驱动铲斗来降低载荷的下降，从而根据手臂和吊臂的手动操作始终水平地保持铲斗。

3. 发明授权

US5116186A Apparatus for controlling hydraulic cylinders of a power shovel 失效
标题翻译：用于控制电铲的液压缸的装置
公开(公告)号：US5116186A
公开(公告)日：1992-05-26
申请号：US465259
申请日：1990-03-30
申请人： Tadayuki Hanamoto , Shinji Takasugi
发明人： Tadayuki Hanamoto , Shinji Takasugi
IPC分类号： E02F3/43
CPC分类号： E02F3/438 , E02F3/437
摘要： A technique relating to automatic excavation by a power shovel is shown. An ideal reference locus of movement of a front edge of a bucket is approximated by a plurality of points, positions of the plurality of points and postures of the bucket at these points are previously set. If the start of automatic excavation is assigned by an operation pedal or the like, the position of the front edge of the bucket at the assigned moment is made a position to start excavation. The positions of the plurality of points set relative to a vehicle are calculated for each of excavation sections divided by the plurality of points according to the position to start excavation, and angles of rotation of respective working machines needed to move the front edge of the bucket to the calculated position and to set the bucket to the posture of the bucket set are calculated for each of the excavation sections, and the respective working machines are automatically driven making the calculated angles of rotation target angles of rotation for each excavation section. The bucket, an arm and a boom are thereby automatically controlled so that the front edge of the bucket moves along the ideal reference locus of movement set and the bucket has the ideal posture set by simple operations. Thus, it is intended to improve operation efficiency. After terminating excavation, dropping of load is reduced by automatically driving the bucket so that the bucket is always horizontally maintained in accordance with manual operations of the arm and boom.

4. 发明申请

US20080311019A1 Apparatus for pulling single crystal by CZ method 审中-公开
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US20080311019A1
公开(公告)日：2008-12-18
申请号：US11981476
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C01B33/02 , H01L21/322
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

5. 发明授权

US06347521B1 Temperature control device and method for manufacturing the same 有权
标题翻译：温度控制装置及其制造方法
公开(公告)号：US06347521B1
公开(公告)日：2002-02-19
申请号：US09685805
申请日：2000-10-11
申请人： Kanichi Kadotani , Makio Tsubota , Hironori Akiba , Tadayuki Hanamoto
发明人： Kanichi Kadotani , Makio Tsubota , Hironori Akiba , Tadayuki Hanamoto
IPC分类号： F25B2102
CPC分类号： H01L21/67103 , F25B21/02 , F25B2500/01 , H01L23/38 , H01L35/32 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a temperature control device with excellent temperature uniformity and thermal response, which can be manufactured easily, and a manufacturing method for the same. A thermoelectric device 21 is arranged between a substrate mounting plate 1 and a cooling plate 3. Copper foil electrodes 5, 5, . . . on the upper side of the thermoelectric device 21 are adhered to a lower surface of the substrate mounting plate 1 with an adhesive sheet 17 covering substantially the entire lower surface of the substrate mounting plate 1, and copper foil electrodes 7, 7, . . . on the lower side of the thermoelectric device 21 are adhered to an upper surface of the cooling plate 3 with an adhesive sheet 19 covering substantially the entire upper surface of the substrate mounting plate 1. The total thickness of the adhesive sheet 17 and the copper foil electrodes 5 adhering to it, and the total thickness of the adhesive sheet 19 and the copper foil electrodes 7 adhering to it, is each set approximately 25 to 1000 &mgr;m thin, so as to make the thermal resistance sufficiently low. Thermoelectric conversion elements 9 and 13 are distributed across a large area covering at least the entire area corresponding to the substrate 2.
摘要翻译：本发明提供一种具有优异的温度均匀性和热响应的温度控制装置，其可以容易地制造，以及其制造方法。热电装置21设置在基板安装板1和冷却板3之间。铜箔电极5,5。。。在基板安装板1的下表面上，在基板安装板1的大致整个下表面覆盖有粘接片17和铜箔电极7,7，将热电元件21的上侧粘接。。。在热电装置21的下侧，利用覆盖基板安装板1的整个上表面的粘合片19将冷却板3的上表面粘接。粘合片17和铜箔的总厚度附着在其上的电极5和附着在其上的粘合片19和铜箔电极7的总厚度分别设定为25〜1000μm左右，使得热阻足够低。热电转换元件9和13分布在覆盖至少对应于基板2的整个区域的大面积上。

6. 发明申请

US20070068448A1 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
公开(公告)号：US20070068448A1
公开(公告)日：2007-03-29
申请号：US11605752
申请日：2006-11-29
申请人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
发明人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

7. 发明授权

US06994748B2 Method and apparatus for measuring melt level 有权
标题翻译：测量熔体水平的方法和装置
公开(公告)号：US06994748B2
公开(公告)日：2006-02-07
申请号：US10258984
申请日：2001-05-01
申请人： Masato Moriya , Tadayuki Hanamoto , Hiroshi Monden , Toshio Hayashida , Toshirou Kotooka
发明人： Masato Moriya , Tadayuki Hanamoto , Hiroshi Monden , Toshio Hayashida , Toshirou Kotooka
IPC分类号： C30B15/00
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/10 , Y10T117/1004
摘要： A melt level or the gap between a melt surface and a heat shield is measured accurately irrespective of how the melt surface is. A laser beam from a range-finding unit is reflected by a scanning mirror and projected on a melt surface through an entrance window and a quartz prism in a chamber of a puller. After specular reflection, the beam forms a measurement spot in the bottom of a heat shield and scatters. Part of the scatter, after specular reflection at the melt surface (secondary reflection), passes through the prism, the entrance window and the scanning mirror to the range-finding unit. The range-finding unit carries out triangulation using the distance between a laser source and a photodetector therein, and the angle of incidence and the angle of the received laser beam.
摘要翻译：精确地测量熔体水平或熔体表面和隔热板之间的间隙，而不管熔体表面如何。来自测距单元的激光束被扫描反射镜反射并通过入口窗口和在拉拔器的腔室中的石英棱镜投射在熔体表面上。在镜面反射之后，光束在隔热板的底部形成测量点并散射。在熔体表面（二次反射）的镜面反射之后，散射的一部分通过棱镜，入射窗和扫描镜到达测距单元。测距单元使用激光源和其中的光电检测器之间的距离以及所接收的激光束的入射角和角度来进行三角测量。

8. 发明授权

US07727334B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US07727334B2
公开(公告)日：2010-06-01
申请号：US11809357
申请日：2007-05-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

9. 发明申请

US20090173272A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20090173272A1
公开(公告)日：2009-07-09
申请号：US12317695
申请日：2008-12-23
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , F28D15/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

10. 发明授权

US07160386B2 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
标题翻译：单晶半导体制造装置及制造方法以及单晶锭
公开(公告)号：US07160386B2
公开(公告)日：2007-01-09
申请号：US10487286
申请日：2002-09-27
申请人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
发明人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
IPC分类号： C30B13/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.
摘要翻译：单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制，公开了该方法。通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。此外，调节上侧加热装置（9a）和下侧加热装置（9b）产生的热量之间的比例以改变处理条件。在调节中，由下侧加热装置（9b）产生的热量控制在相当大的比例。不需要高成本和大尺寸的制造装置，可以控制单晶半导体的轴向氧浓度分布，单晶半导体的直径以及轴向氧浓度的微小波动。

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