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1. 发明授权

US07918934B2 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
标题翻译：单晶半导体制造装置及制造方法以及单晶锭
公开(公告)号：US07918934B2
公开(公告)日：2011-04-05
申请号：US11605752
申请日：2006-11-29
申请人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
发明人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.
摘要翻译：单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制，公开了该方法。通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。此外，调节由上侧加热装置（9a）产生的热量与通过下侧加热装置（9b）产生的热量之间的比率以改变处理条件。在调整中，将下侧加热装置（9b）产生的热量控制在相当大的比例。在不需要制造装置的高成本和大尺寸的情况下，控制单晶半导体的轴向的氧浓度分布，单晶半导体的直径和轴向的氧浓度的微小波动。

2. 发明授权

US07160386B2 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
标题翻译：单晶半导体制造装置及制造方法以及单晶锭
公开(公告)号：US07160386B2
公开(公告)日：2007-01-09
申请号：US10487286
申请日：2002-09-27
申请人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
发明人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
IPC分类号： C30B13/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.
摘要翻译：单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制，公开了该方法。通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。此外，调节上侧加热装置（9a）和下侧加热装置（9b）产生的热量之间的比例以改变处理条件。在调节中，由下侧加热装置（9b）产生的热量控制在相当大的比例。不需要高成本和大尺寸的制造装置，可以控制单晶半导体的轴向氧浓度分布，单晶半导体的直径以及轴向氧浓度的微小波动。

3. 发明申请

US20070068448A1 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
公开(公告)号：US20070068448A1
公开(公告)日：2007-03-29
申请号：US11605752
申请日：2006-11-29
申请人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
发明人： Yutaka Shiraishi , Jyunsuke Tomioka , Takuji Okumura , Tadayuki Hanamoto , Takehiro Komatsu , Shigeo Morimoto
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

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